JP7410800B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7410800B2 JP7410800B2 JP2020094936A JP2020094936A JP7410800B2 JP 7410800 B2 JP7410800 B2 JP 7410800B2 JP 2020094936 A JP2020094936 A JP 2020094936A JP 2020094936 A JP2020094936 A JP 2020094936A JP 7410800 B2 JP7410800 B2 JP 7410800B2
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- 239000004065 semiconductor Substances 0.000 title claims description 250
- 239000002184 metal Substances 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 88
- 239000012535 impurity Substances 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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Description
先ず、第1の実施形態について説明する。
図1は、本実施形態に係る半導体装置を示す平面図である。
図2は、図1に示すA-A'線による断面図である。
なお、各図は模式的なものであり、構成要素は適宜、強調、簡略化又は省略されている。また、図間において、構成要素の数及び寸法比は、必ずしも一致していない。後述する他の図についても、同様である。
図1は、半導体部分20及び金属層32を示し、金属層31、アノード電極30、絶縁膜40を省略している。また、図を見やすくするために、金属層32にのみハッチングを付している。
半導体装置1においては、n-形半導体領域22とアノード電極30によりショットキーバリアダイオード(SBD)が形成される。ショットキーバリアダイオードはスイッチング速度が高く、順方向の電圧降下が少ない。
次に、第2の実施形態について説明する。
図3は、本実施形態に係る半導体装置を示す平面図である。
図4は、図3に示すB-B'線による断面図である。
次に、第1の比較例について説明する。
図5は、本比較例に係る半導体装置を示す断面図である。
図5に示すように、本比較例に係る半導体装置101は、第1の実施形態に係る半導体装置1(図1及び図2参照)と比較して、n形半導体領域23が設けられていない点が異なっている。
次に、第2の比較例について説明する。
図6は、本比較例に係る半導体装置を示す断面図である。
図6に示すように、本比較例に係る半導体装置102は、第1の実施形態に係る半導体装置1(図1及び図2参照)と比較して、n形半導体領域23が金属層31の直下域と金属層32の直下域の双方に設けられている点が異なっている。
次に、上述の実施形態の効果を示す試験例について説明する。
図7(a)は、横軸に順方向電圧をとり縦軸に順方向電流をとって半導体装置の特性を示すグラフであり、図7(b)は横軸に逆方向電圧をとり縦軸に逆方向電流をとって半導体装置の特性を示すグラフである。
10:カソード電極
20:半導体部分
21:n+形半導体領域
22:n-形半導体領域
23:n形半導体領域
26:p形半導体領域
26a:枠状部分
26b:線状部分
26c:円状部分
27:p+形半導体領域
28:p-形半導体領域
30:アノード電極
31、32:金属層
40:絶縁膜
101、102:半導体装置
vb1、vb2、vb101:ブレークダウン電圧
vf1、vf2、vf102:伝導度変調電圧
Claims (7)
- 第1電極と、
前記第1電極に接続された第1導電形の第1半導体領域と、
前記第1半導体領域上に設けられ、前記第1半導体領域に接し、第2導電形である第2半導体領域と、
前記第2半導体領域上に設けられ、前記第2半導体領域に接した複数の第1金属層及び複数の第2金属層と、
前記第1半導体領域と前記第1金属層との間に設けられ、前記第1半導体領域と前記第2金属層の間には設けられておらず、前記第1半導体領域及び前記第2半導体領域に接し、前記第1導電形であり、不純物濃度が前記第1半導体領域の不純物濃度よりも高い第3半導体領域と、
前記第1半導体領域、前記第2半導体領域、前記第1金属層、及び、前記第2金属層に接した第2電極と、
を備え、
複数の前記第1金属層が第1方向に沿って配列された第1の列が複数構成されており、
複数の前記第2金属層が前記第1方向に沿って配列された第2の列が複数構成されており、
前記第1の列と前記第2の列は、前記第1方向と直交する第2方向に沿って交互に配列されている半導体装置。 - 上方から見て、前記第1金属層の面積は前記第2金属層の面積と等しい請求項1に記載の半導体装置。
- 上方から見て、前記第1金属層の面積は前記第2金属層の面積よりも小さい請求項1に記載の半導体装置。
- 複数の前記第1金属層は、前記第2方向に沿って周期的に配列されており、
複数の前記第2金属層は、前記第2方向に沿って周期的に配列されている請求項1に記載の半導体装置。 - 前記第1金属層及び前記第2金属層は、前記第1方向及び前記第2方向と交差した第3方向に沿って交互に配列されている請求項1~4のいずれか1つに記載の半導体装置。
- 前記第2半導体領域は、前記第2方向に延びる複数の線状部分を有する請求項1~5のいずれか1つに記載の半導体装置。
- 上方から見て、前記複数の第1金属層及び前記複数の第2金属層のうち、相互に最も近い3つの中心間を結ぶ三角形は正三角形である請求項1~6のいずれか1つに記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020094936A JP7410800B2 (ja) | 2020-05-29 | 2020-05-29 | 半導体装置 |
CN202011601435.3A CN113745310B (zh) | 2020-05-29 | 2020-12-30 | 半导体装置 |
EP21156795.3A EP3916812A1 (en) | 2020-05-29 | 2021-02-12 | Semiconductor device |
US17/177,708 US11508854B2 (en) | 2020-05-29 | 2021-02-17 | Semiconductor device |
JP2023216082A JP2024019673A (ja) | 2020-05-29 | 2023-12-21 | 半導体装置 |
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JP2020094936A JP7410800B2 (ja) | 2020-05-29 | 2020-05-29 | 半導体装置 |
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JP2023216082A Division JP2024019673A (ja) | 2020-05-29 | 2023-12-21 | 半導体装置 |
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JP2021190573A JP2021190573A (ja) | 2021-12-13 |
JP7410800B2 true JP7410800B2 (ja) | 2024-01-10 |
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US20090302327A1 (en) | 2008-06-10 | 2009-12-10 | Rexer Christopher L | Rugged semiconductor device architecture |
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US20090302327A1 (en) | 2008-06-10 | 2009-12-10 | Rexer Christopher L | Rugged semiconductor device architecture |
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JP2015056471A (ja) | 2013-09-11 | 2015-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
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