JP2017011119A - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
- Publication number
- JP2017011119A JP2017011119A JP2015125640A JP2015125640A JP2017011119A JP 2017011119 A JP2017011119 A JP 2017011119A JP 2015125640 A JP2015125640 A JP 2015125640A JP 2015125640 A JP2015125640 A JP 2015125640A JP 2017011119 A JP2017011119 A JP 2017011119A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- modified layer
- along
- protective member
- processing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 45
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 230000035699 permeability Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 54
- 239000010410 layer Substances 0.000 description 40
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- High Energy & Nuclear Physics (AREA)
- Laser Beam Processing (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015125640A JP2017011119A (ja) | 2015-06-23 | 2015-06-23 | ウエーハの加工方法 |
| TW105114745A TW201709302A (zh) | 2015-06-23 | 2016-05-12 | 晶圓的加工方法 |
| KR1020160070165A KR20170000330A (ko) | 2015-06-23 | 2016-06-07 | 웨이퍼의 가공 방법 |
| CN201610443117.6A CN106298651A (zh) | 2015-06-23 | 2016-06-20 | 晶片的加工方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015125640A JP2017011119A (ja) | 2015-06-23 | 2015-06-23 | ウエーハの加工方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2017011119A true JP2017011119A (ja) | 2017-01-12 |
Family
ID=57651365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015125640A Pending JP2017011119A (ja) | 2015-06-23 | 2015-06-23 | ウエーハの加工方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017011119A (zh) |
| KR (1) | KR20170000330A (zh) |
| CN (1) | CN106298651A (zh) |
| TW (1) | TW201709302A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020021791A (ja) * | 2018-07-31 | 2020-02-06 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7550612B2 (ja) | 2020-11-10 | 2024-09-13 | 株式会社ディスコ | ウェーハの加工方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013132674A (ja) * | 2011-12-27 | 2013-07-08 | Disco Corp | ウエーハの加工方法およびレーザー加工装置 |
| WO2014080918A1 (ja) * | 2012-11-20 | 2014-05-30 | 古河電気工業株式会社 | 半導体チップの製造方法およびそれに用いる薄膜研削用表面保護テープ |
| JP2014116361A (ja) * | 2012-12-06 | 2014-06-26 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法およびレーザー加工装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4733934B2 (ja) | 2004-06-22 | 2011-07-27 | 株式会社ディスコ | ウエーハの加工方法 |
| JP5992731B2 (ja) | 2012-06-07 | 2016-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
-
2015
- 2015-06-23 JP JP2015125640A patent/JP2017011119A/ja active Pending
-
2016
- 2016-05-12 TW TW105114745A patent/TW201709302A/zh unknown
- 2016-06-07 KR KR1020160070165A patent/KR20170000330A/ko not_active Application Discontinuation
- 2016-06-20 CN CN201610443117.6A patent/CN106298651A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013132674A (ja) * | 2011-12-27 | 2013-07-08 | Disco Corp | ウエーハの加工方法およびレーザー加工装置 |
| WO2014080918A1 (ja) * | 2012-11-20 | 2014-05-30 | 古河電気工業株式会社 | 半導体チップの製造方法およびそれに用いる薄膜研削用表面保護テープ |
| JP2014116361A (ja) * | 2012-12-06 | 2014-06-26 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法およびレーザー加工装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020021791A (ja) * | 2018-07-31 | 2020-02-06 | 株式会社ディスコ | ウエーハの加工方法 |
| JP7154860B2 (ja) | 2018-07-31 | 2022-10-18 | 株式会社ディスコ | ウエーハの加工方法 |
| TWI798471B (zh) * | 2018-07-31 | 2023-04-11 | 日商迪思科股份有限公司 | 晶圓加工方法 |
| JP7550612B2 (ja) | 2020-11-10 | 2024-09-13 | 株式会社ディスコ | ウェーハの加工方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201709302A (zh) | 2017-03-01 |
| KR20170000330A (ko) | 2017-01-02 |
| CN106298651A (zh) | 2017-01-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180418 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190109 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190129 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190806 |