JP2017011001A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017011001A JP2017011001A JP2015122470A JP2015122470A JP2017011001A JP 2017011001 A JP2017011001 A JP 2017011001A JP 2015122470 A JP2015122470 A JP 2015122470A JP 2015122470 A JP2015122470 A JP 2015122470A JP 2017011001 A JP2017011001 A JP 2017011001A
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Abstract
【解決手段】n-半導体基板のおもて面側には、IGBT部21からFWD部22にわたってpベース層2と、トレンチ3、ゲート酸化膜4およびゲート電極5からなるトレンチゲートと、エミッタ電極8とが設けられている。隣り合うトレンチ3の間に挟まれたpベース層2のうち、n+エミッタ領域6を有するpベース層2は、IGBTエミッタ部31である。隣り合うトレンチ3の間に挟まれたpベース層2のうち、n+エミッタ領域6を有していないpベース層2は、FWDアノード部32である。n+カソード領域12の短手方向幅L12は、FWDアノード部32の短手方向幅L32よりも狭い。FWDアノード部32の短手方向幅L32とn+カソード領域12の短手方向幅L12との差分ΔL1は、50μm以上である。
【選択図】図2
Description
実施の形態にかかる半導体装置の構成について説明する。図1は、実施の形態にかかる半導体装置の構成を示す平面図である。図2は、図1の切断線A−A’における断面構造を示す断面図である。図1,2に示すように、実施の形態にかかる半導体装置は、n-ドリフト層1となる同一のn-半導体基板(半導体チップ)上に、絶縁ゲート型バイポーラトランジスタ(IGBT)が設けられたIGBT部21と、還流用ダイオード(FWD)が設けられたFWD部22と、を備える。
次に、実施の形態にかかる半導体装置の順方向電圧降下特性について検証した。図11は、実施の形態にかかる半導体装置の順方向電圧降下特性を示す特性図である。上述した実施の形態にかかる半導体装置の製造方法にしたがい、FWDアノード部32の短手方向幅L32とn+カソード領域12の短手方向幅L12との差分ΔL1が異なる複数のRC−IGBTを作製した。具体的には、n+カソード領域12の短手方向幅L12を100μmとし、FWDアノード部32の短手方向幅L32を種々変更した。
次に、実施の形態にかかる半導体装置の逆回復特性について検証した。図12は、実施の形態にかかる半導体装置の逆回復波形を示す特性図である。上述した実施の形態にかかる半導体装置の製造方法にしたがってRC−IGBT(実施例)を作製し、このRC−IGBTの逆回復波形を測定した。その結果を図12に示す。また、図12には、FWDアノード部32の短手方向幅L32とn+カソード領域12の短手方向幅L12とが等しいRC−IGBT(すなわち図16に示す従来例)の逆回復波形も示す。
次に、FWD部22のトレンチゲートの有無と、素子耐圧との関係について検証した。図13は、FWD部におけるトレンチゲートの有無による電流−電圧特性を示す特性図である。FWD部22にトレンチゲートを設けた場合(トレンチゲートあり)と、FWD部にトレンチゲートを設けない場合(トレンチゲートなし)とについて、素子耐圧を測定した結果を図13に示す。ここで、「トレンチゲートあり」は上記実施例であり、「トレンチゲートなし」はFWD部におけるトレンチゲートを設けない以外は実施例と同様である(図14においても同様)。
1a,10a 短ライフタイム領域
2 pベース層
3 トレンチ
4 ゲート酸化膜
5 ゲート電極
6 n+エミッタ領域
7 p+コンタクト領域
8 エミッタ電極
9 層間絶縁膜
10 nFS層
11 p+コレクタ領域
12 n+カソード領域
13 コレクタ電極
20 MOSゲート構造
21 IGBT部
22 FWD部
31 IGBTエミッタ部
32 FWDアノード部
Claims (4)
- 第1導電型のドリフト層を有する半導体基板に、絶縁ゲート型バイポーラトランジスタ部および還流用ダイオード部を備えた半導体装置であって、
前記絶縁ゲート型バイポーラトランジスタ部は、
前記半導体基板のおもて面側に設けられた第2導電型のベース層と、
前記ベース層内に選択的に設けられた第1導電型のエミッタ領域と、
前記半導体基板のおもて面側に設けられた第1ゲート絶縁膜および第1ゲート電極からなる第1絶縁ゲート部と、
前記ベース層と前記エミッタ領域との両方に電気的に接続するエミッタ電極と、
前記半導体基板の裏面側に選択的に設けられた第2導電型のコレクタ領域と、
前記コレクタ領域に電気的に接続するコレクタ電極と、を備え、
前記還流用ダイオード部は、
前記半導体基板のおもて面側に設けられ、前記エミッタ電極に電気的に接続する第2導電型のアノード層と、
前記アノード層を貫通して前記ドリフト層に達する第1トレンチ、前記第1トレンチの内壁に沿って設けられた第2ゲート絶縁膜、および、前記第1トレンチの内部に前記第2ゲート絶縁膜を介して設けられた第2ゲート電極からなる第2絶縁ゲート部と、
前記半導体基板の裏面側に選択的に設けられ、前記コレクタ電極に電気的に接続する第1導電型のカソード領域と、を備え、
前記絶縁ゲート型バイポーラトランジスタ部と前記還流用ダイオード部とが並ぶ第1方向における前記カソード領域の幅は、前記第1方向における前記アノード層の幅よりも狭いことを特徴とする半導体装置。 - 前記第1方向における前記アノード層の幅と、前記第1方向における前記カソード領域の幅との差分は、50μm以上であることを特徴とする請求項1に記載の半導体装置。
- 前記第1方向に直交する第2方向における前記カソード領域の幅は、前記第2方向における前記アノード層の幅よりも狭いことを特徴とする請求項1または2に記載の半導体装置。
- 前記第1絶縁ゲート部は、
前記ベース層および前記エミッタ領域を貫通して前記ドリフト層に達する第2トレンチと、
前記第2トレンチの内壁に沿って設けられた前記第1ゲート絶縁膜と、
前記第2トレンチの内部に前記第1ゲート絶縁膜を介して設けられた前記第1ゲート電極と、
を備えることを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108122962A (zh) * | 2017-12-04 | 2018-06-05 | 西南交通大学 | 一种绝缘栅双极型晶体管 |
JP2019033128A (ja) * | 2017-08-04 | 2019-02-28 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
CN109983565A (zh) * | 2017-03-06 | 2019-07-05 | 株式会社电装 | 半导体装置 |
US11488951B2 (en) | 2019-02-27 | 2022-11-01 | Fuji Electric Co., Ltd. | Semiconductor device |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE102017011878A1 (de) * | 2017-12-21 | 2019-06-27 | 3-5 Power Electronics GmbH | Stapelförmiges III-V-Halbleiterbauelement |
JP6996461B2 (ja) * | 2018-09-11 | 2022-01-17 | 株式会社デンソー | 半導体装置 |
US11145644B2 (en) * | 2019-08-13 | 2021-10-12 | Semiconductor Components Industries, Llc | Power device with carrier lifetime zone |
CN110797404B (zh) * | 2019-10-18 | 2023-11-28 | 上海睿驱微电子科技有限公司 | 一种rc-igbt半导体器件 |
CN113659014B (zh) * | 2021-10-20 | 2022-01-18 | 四川洪芯微科技有限公司 | 一种含有阴极短接槽栅结构的功率二极管 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013021304A (ja) * | 2011-06-15 | 2013-01-31 | Denso Corp | 半導体装置 |
JP2013145851A (ja) * | 2012-01-16 | 2013-07-25 | Toyota Motor Corp | 半導体装置 |
JP2013152996A (ja) * | 2012-01-24 | 2013-08-08 | Toyota Motor Corp | 半導体装置 |
JP2014056942A (ja) * | 2012-09-12 | 2014-03-27 | Toshiba Corp | 電力用半導体装置 |
WO2015068203A1 (ja) * | 2013-11-05 | 2015-05-14 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005057235A (ja) * | 2003-07-24 | 2005-03-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路 |
JP4799829B2 (ja) | 2003-08-27 | 2011-10-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ及びインバータ回路 |
JP2008192737A (ja) | 2007-02-02 | 2008-08-21 | Denso Corp | 半導体装置 |
JP4910894B2 (ja) | 2007-06-12 | 2012-04-04 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
EP2003694B1 (en) * | 2007-06-14 | 2011-11-23 | Denso Corporation | Semiconductor device |
JP5045733B2 (ja) * | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
DE112010005443B4 (de) * | 2010-04-02 | 2019-03-14 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich sowie Verfahren zu dessen Herstellung |
WO2011138832A1 (ja) * | 2010-05-07 | 2011-11-10 | トヨタ自動車株式会社 | 半導体装置 |
JP5582102B2 (ja) * | 2010-07-01 | 2014-09-03 | 株式会社デンソー | 半導体装置 |
JP5605073B2 (ja) | 2010-08-17 | 2014-10-15 | 株式会社デンソー | 半導体装置 |
JP5321669B2 (ja) * | 2010-11-25 | 2013-10-23 | 株式会社デンソー | 半導体装置 |
JP5995435B2 (ja) * | 2011-08-02 | 2016-09-21 | ローム株式会社 | 半導体装置およびその製造方法 |
JP6119593B2 (ja) * | 2013-12-17 | 2017-04-26 | トヨタ自動車株式会社 | 半導体装置 |
JP6274318B2 (ja) * | 2014-08-26 | 2018-02-07 | 三菱電機株式会社 | 半導体素子 |
JP6197773B2 (ja) * | 2014-09-29 | 2017-09-20 | トヨタ自動車株式会社 | 半導体装置 |
JP6260515B2 (ja) * | 2014-11-13 | 2018-01-17 | 三菱電機株式会社 | 半導体装置 |
JP6274154B2 (ja) * | 2015-05-27 | 2018-02-07 | トヨタ自動車株式会社 | 逆導通igbt |
-
2015
- 2015-06-17 JP JP2015122470A patent/JP6334465B2/ja active Active
-
2016
- 2016-06-10 CN CN201680024918.7A patent/CN107534042B/zh active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013021304A (ja) * | 2011-06-15 | 2013-01-31 | Denso Corp | 半導体装置 |
JP2013145851A (ja) * | 2012-01-16 | 2013-07-25 | Toyota Motor Corp | 半導体装置 |
JP2013152996A (ja) * | 2012-01-24 | 2013-08-08 | Toyota Motor Corp | 半導体装置 |
JP2014056942A (ja) * | 2012-09-12 | 2014-03-27 | Toshiba Corp | 電力用半導体装置 |
WO2015068203A1 (ja) * | 2013-11-05 | 2015-05-14 | トヨタ自動車株式会社 | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109983565A (zh) * | 2017-03-06 | 2019-07-05 | 株式会社电装 | 半导体装置 |
CN109983565B (zh) * | 2017-03-06 | 2022-01-11 | 株式会社电装 | 半导体装置 |
JP2019033128A (ja) * | 2017-08-04 | 2019-02-28 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
CN108122962A (zh) * | 2017-12-04 | 2018-06-05 | 西南交通大学 | 一种绝缘栅双极型晶体管 |
CN108122962B (zh) * | 2017-12-04 | 2020-07-31 | 西南交通大学 | 一种绝缘栅双极型晶体管 |
US11488951B2 (en) | 2019-02-27 | 2022-11-01 | Fuji Electric Co., Ltd. | Semiconductor device |
US11810913B2 (en) | 2019-02-27 | 2023-11-07 | Fuji Electric Co., Ltd. | Semiconductor device |
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