JP2016528723A - ダイの破壊強度を高め、側壁を平滑化するためのレーザスクライビング及びプラズマエッチング - Google Patents
ダイの破壊強度を高め、側壁を平滑化するためのレーザスクライビング及びプラズマエッチング Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Abstract
Description
[0001]本願は、本明細書に参照することによって全内容が以下に組み込まれる、2013年7月2日出願の米国特許仮出願第61/842056号の優先権を主張するものである。
ことの内の一又は複数のが含まれる。
Claims (15)
- 複数の集積回路を備える半導体ウェハをダイシングする方法であって、
前記半導体ウェハの上に、前記集積回路をカバーし保護するマスクを形成することと、
レーザスクライビングプロセスで前記マスクをパターニングし、間隙を有するパターニングされたマスクを提供して、前記集積回路間の前記半導体ウェハの領域をむき出しにすることと、
前記パターニングされたマスクの前記間隙を通して前記半導体ウェハを異方的にエッチングし、エッチングされた溝を形成し、前記半導体ウェハを完全に貫通させ、前記集積回路を個片化することと、
NF3とCF4の組み合わせに基づくプラズマで、異方的にエッチングされた前記溝を等方的にエッチングすることと
を含む方法。 - 前記等方的エッチングにより、ダイ個片化後の異方的にエッチングされた前記ダイ側壁から異方的エッチングの副生成物、粗さ、又は側壁のスカラップ形が取り除かれる、請求項1に記載の方法。
- 前記等方的エッチングにより、前記エッチング溝から、炭素及びフッ素を含むポリマーが取り除かれる、請求項1に記載の方法。
- 前記半導体ウェハを異方的にエッチングすることは、エッチングされた前記溝の底部に背面テープがむき出しになるまで、ポリマーの堆積、方向性照射エッチング、及び等方的化学エッチングを含む循環プロセスを繰り返し行うことを含む、請求項1に記載の方法。
- 異方的エッチングと等方的エッチングの両方に同じプラズマエッチングチャンバが用いられる、請求項1に記載の方法。
- 前記ウェハが少なくとも300mmの直径を有し、背面を研削する前の厚さが300um〜800umである、請求項1に記載の方法。
- 前記マスクをパターニングすることは更に、540ナノメートル以下の波長と、400フェムト秒以下のレーザパルス幅を有するフェムト秒レーザでパターンを直接描くことを含む、請求項1に記載の方法。
- 前記マスクを形成することは更に、水溶性マスク層を前記ウェハに堆積させることを含む、請求項1に記載の方法。
- 前記水溶性マスク層はPVAを含む、請求項8に記載の方法。
- 前記マスクを形成することは更に、前記水溶性マスク層を下塗り層として含み、非水溶性マスク層を前記下塗り層の上に上塗り層として含む多層マスクを堆積させることを含む、請求項8に記載の方法。
- 前記非水溶性マスク層は、フォトレジスト又はポリイミド(PI)である、請求項10に記載の方法。
- 複数のICを備える、基板をダイシングするためのシステムであって、
多層マスクをパターニングし、前記基板の前記IC間の領域をむき出しにするレーザスクライブモジュールと、
エッチングされた溝を異方的に形成し、レーザスクライビングの後に残った前記基板の厚みを貫通させる、前記レーザスクライブモジュールに物理的に結合された異方的プラズマエッチングモジュールと、
NF3とCF4の組み合わせに基づくプラズマで異方的にエッチングされた前記溝を等方的にエッチングする、前記レーザスクライブモジュールに物理的に結合された等方的プラズマエッチングモジュールと、
前記レーザスクライブモジュールから前記異方的プラズマエッチングモジュールまでレーザスクライビングされた基板を移送するロボット型移送チャンバと
を備えるシステム。 - 前記レーザスクライブモジュールは、540ナノメートル以下の波長と、400フェムト秒以下のパルス幅を有するフェムト秒レーザを備える、請求項12に記載のシステム。
- 前記等方的プラズマエッチングチャンバと、前記異方的プラズマエッチングチャンバは同じ単一のチャンバである、請求項12に記載のシステム。
- 前記等方的プラズマエッチングチャンバは、下流プラズマ源を用いる、請求項12に記載のシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361842056P | 2013-07-02 | 2013-07-02 | |
US61/842,056 | 2013-07-02 | ||
US14/293,227 | 2014-06-02 | ||
US14/293,227 US20150011073A1 (en) | 2013-07-02 | 2014-06-02 | Laser scribing and plasma etch for high die break strength and smooth sidewall |
PCT/US2014/042000 WO2015002725A1 (en) | 2013-07-02 | 2014-06-11 | Laser scribing and plasma etch for high die break strength and smooth sidewall |
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JP2016528723A true JP2016528723A (ja) | 2016-09-15 |
JP6513082B2 JP6513082B2 (ja) | 2019-05-15 |
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JP2016523770A Active JP6513082B2 (ja) | 2013-07-02 | 2014-06-11 | ダイの破壊強度を高め、側壁を平滑化するためのレーザスクライビング及びプラズマエッチング |
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US (1) | US20150011073A1 (ja) |
JP (1) | JP6513082B2 (ja) |
KR (1) | KR102250628B1 (ja) |
CN (1) | CN105359256B (ja) |
TW (1) | TWI635569B (ja) |
WO (1) | WO2015002725A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108788486A (zh) * | 2017-05-05 | 2018-11-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
JP2019201147A (ja) * | 2018-05-17 | 2019-11-21 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2021034552A (ja) * | 2019-08-23 | 2021-03-01 | パナソニックIpマネジメント株式会社 | 素子チップのスムージング方法および素子チップの製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US9633902B2 (en) * | 2015-03-10 | 2017-04-25 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device that includes dividing semiconductor substrate by dry etching |
SG10202004257WA (en) | 2015-11-24 | 2020-06-29 | Harvard College | Atomic layer deposition process for fabricating dielectric metasurfaces for wavelengths in the visible spectrum |
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US10304720B2 (en) * | 2016-07-15 | 2019-05-28 | Brewer Science, Inc. | Laser ablative dielectric material |
JP6765949B2 (ja) * | 2016-12-12 | 2020-10-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP2018110156A (ja) | 2016-12-28 | 2018-07-12 | キヤノン株式会社 | 半導体装置、その製造方法およびカメラ |
JP6903375B2 (ja) * | 2017-04-19 | 2021-07-14 | 株式会社ディスコ | デバイスチップの製造方法 |
GB201708927D0 (en) * | 2017-06-05 | 2017-07-19 | Spts Technologies Ltd | Methods of plasma etching and plasma dicing |
US10795168B2 (en) | 2017-08-31 | 2020-10-06 | Metalenz, Inc. | Transmissive metasurface lens integration |
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US10734505B2 (en) * | 2017-11-30 | 2020-08-04 | International Business Machines Corporation | Lateral bipolar junction transistor with dual base region |
JP7066263B2 (ja) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | 加工方法、エッチング装置、及びレーザ加工装置 |
US10573558B1 (en) | 2018-08-23 | 2020-02-25 | International Business Machines Corporation | Caterpillar trenches for efficient wafer dicing |
US11081392B2 (en) * | 2018-09-28 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dicing method for stacked semiconductor devices |
CN109616414A (zh) * | 2018-11-06 | 2019-04-12 | 深圳方正微电子有限公司 | 晶圆加工方法和半导体器件的制备方法 |
DE102018128570A1 (de) * | 2018-11-14 | 2020-05-14 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung einer vielzahl strahlungsemittierender bauelemente, strahlungsemittierendes bauelement, verfahren zur herstellung eines verbindungsträgers und verbindungsträger |
US11664276B2 (en) * | 2018-11-30 | 2023-05-30 | Texas Instruments Incorporated | Front side laser-based wafer dicing |
US10818551B2 (en) | 2019-01-09 | 2020-10-27 | Semiconductor Components Industries, Llc | Plasma die singulation systems and related methods |
US11295937B2 (en) * | 2019-09-17 | 2022-04-05 | Tokyo Electron Limited | Broadband plasma processing systems and methods |
US11170981B2 (en) | 2019-09-17 | 2021-11-09 | Tokyo Electron Limited | Broadband plasma processing systems and methods |
US11211247B2 (en) | 2020-01-30 | 2021-12-28 | Applied Materials, Inc. | Water soluble organic-inorganic hybrid mask formulations and their applications |
ES2759280B2 (es) * | 2020-03-11 | 2020-09-24 | Univ Madrid Politecnica | Procedimiento de fabricacion de celulas solares en obleas de germanio |
CN113666331A (zh) * | 2021-08-23 | 2021-11-19 | 苏州司南传感科技有限公司 | 一种与mems深硅刻蚀工艺相兼容的薄硅释放工艺 |
US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848422A (ja) * | 1981-09-17 | 1983-03-22 | Nec Corp | 複合ドライエツチング装置 |
JPS5916334A (ja) * | 1982-07-19 | 1984-01-27 | Matsushita Electronics Corp | ドライエツチング方法 |
JPS6294935A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 半導体装置の製造方法 |
JPH02222142A (ja) * | 1989-02-22 | 1990-09-04 | Semiconductor Energy Lab Co Ltd | エッチング方法 |
US6015761A (en) * | 1996-06-26 | 2000-01-18 | Applied Materials, Inc. | Microwave-activated etching of dielectric layers |
JP2006503425A (ja) * | 2002-10-14 | 2006-01-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 基板に構造を異方性エッチングするためのプラズマ装置及び方法 |
US20060099811A1 (en) * | 2003-04-15 | 2006-05-11 | Karola Richter | Method for structuring of silicon substrates for microsystem technological device elements and associated silicon substrate |
JP2007300066A (ja) * | 2006-04-28 | 2007-11-15 | Hynix Semiconductor Inc | 半導体素子のリセスチャネル形成方法 |
US20080081448A1 (en) * | 2006-09-29 | 2008-04-03 | Jung-Seock Lee | Method for fabricating semiconductor device |
JP2011146717A (ja) * | 2010-01-18 | 2011-07-28 | Semiconductor Components Industries Llc | 半導体ダイを形成する方法 |
JP2011146720A (ja) * | 2010-01-18 | 2011-07-28 | Semiconductor Components Industries Llc | Em保護が施された半導体ダイを形成する方法 |
WO2012173759A2 (en) * | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
WO2012173758A2 (en) * | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | Multi-layer mask for substrate dicing by laser by laser and plasma etch |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235637B1 (en) * | 1999-09-15 | 2001-05-22 | Taiwan Semiconductor Manufacturing Company | Method for marking a wafer without inducing flat edge particle problem |
US6599842B2 (en) * | 1999-11-29 | 2003-07-29 | Applied Materials, Inc. | Method for rounding corners and removing damaged outer surfaces of a trench |
JP2001313280A (ja) * | 2000-04-02 | 2001-11-09 | Axcelis Technologies Inc | ポスト・エッチ・フォトレジストおよび残留物の除去法 |
KR20010082405A (ko) * | 2001-05-11 | 2001-08-30 | 김양태 | 플라즈마 다이싱 방법 및 장치 |
US6852241B2 (en) * | 2001-08-14 | 2005-02-08 | Lexmark International, Inc. | Method for making ink jet printheads |
JP4018088B2 (ja) | 2004-08-02 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法及び半導体素子の製造方法 |
KR101414125B1 (ko) * | 2006-10-12 | 2014-07-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조 방법 및 에칭장치 |
JP4840174B2 (ja) * | 2007-02-08 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
JP4840200B2 (ja) | 2007-03-09 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
US8012857B2 (en) * | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
US8551578B2 (en) * | 2008-02-12 | 2013-10-08 | Applied Materials, Inc. | Patterning of magnetic thin film using energized ions and thermal excitation |
CN102652366A (zh) * | 2009-12-15 | 2012-08-29 | 索尼公司 | 光电转换器件及光电转换器件的制造方法 |
US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US8802545B2 (en) * | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8871105B2 (en) * | 2011-05-12 | 2014-10-28 | Lam Research Corporation | Method for achieving smooth side walls after Bosch etch process |
KR20130063089A (ko) * | 2011-12-06 | 2013-06-14 | 현대자동차주식회사 | 반도체 소자의 트렌치 형성 방법 |
US8993414B2 (en) * | 2012-07-13 | 2015-03-31 | Applied Materials, Inc. | Laser scribing and plasma etch for high die break strength and clean sidewall |
-
2014
- 2014-06-02 US US14/293,227 patent/US20150011073A1/en not_active Abandoned
- 2014-06-11 WO PCT/US2014/042000 patent/WO2015002725A1/en active Application Filing
- 2014-06-11 CN CN201480037607.5A patent/CN105359256B/zh active Active
- 2014-06-11 KR KR1020167002837A patent/KR102250628B1/ko active IP Right Grant
- 2014-06-11 JP JP2016523770A patent/JP6513082B2/ja active Active
- 2014-06-13 TW TW103120557A patent/TWI635569B/zh active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848422A (ja) * | 1981-09-17 | 1983-03-22 | Nec Corp | 複合ドライエツチング装置 |
JPS5916334A (ja) * | 1982-07-19 | 1984-01-27 | Matsushita Electronics Corp | ドライエツチング方法 |
JPS6294935A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 半導体装置の製造方法 |
JPH02222142A (ja) * | 1989-02-22 | 1990-09-04 | Semiconductor Energy Lab Co Ltd | エッチング方法 |
US6015761A (en) * | 1996-06-26 | 2000-01-18 | Applied Materials, Inc. | Microwave-activated etching of dielectric layers |
JP2006503425A (ja) * | 2002-10-14 | 2006-01-26 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 基板に構造を異方性エッチングするためのプラズマ装置及び方法 |
US20060099811A1 (en) * | 2003-04-15 | 2006-05-11 | Karola Richter | Method for structuring of silicon substrates for microsystem technological device elements and associated silicon substrate |
JP2007300066A (ja) * | 2006-04-28 | 2007-11-15 | Hynix Semiconductor Inc | 半導体素子のリセスチャネル形成方法 |
US20080081448A1 (en) * | 2006-09-29 | 2008-04-03 | Jung-Seock Lee | Method for fabricating semiconductor device |
JP2011146717A (ja) * | 2010-01-18 | 2011-07-28 | Semiconductor Components Industries Llc | 半導体ダイを形成する方法 |
JP2011146720A (ja) * | 2010-01-18 | 2011-07-28 | Semiconductor Components Industries Llc | Em保護が施された半導体ダイを形成する方法 |
WO2012173759A2 (en) * | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | In-situ deposited mask layer for device singulation by laser scribing and plasma etch |
WO2012173758A2 (en) * | 2011-06-15 | 2012-12-20 | Applied Materials, Inc. | Multi-layer mask for substrate dicing by laser by laser and plasma etch |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108788486A (zh) * | 2017-05-05 | 2018-11-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN108788486B (zh) * | 2017-05-05 | 2021-05-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
JP2019201147A (ja) * | 2018-05-17 | 2019-11-21 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
CN110504157A (zh) * | 2018-05-17 | 2019-11-26 | 东京毅力科创株式会社 | 基板处理方法和基板处理装置 |
JP7195060B2 (ja) | 2018-05-17 | 2022-12-23 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP2021034552A (ja) * | 2019-08-23 | 2021-03-01 | パナソニックIpマネジメント株式会社 | 素子チップのスムージング方法および素子チップの製造方法 |
JP7281741B2 (ja) | 2019-08-23 | 2023-05-26 | パナソニックIpマネジメント株式会社 | 素子チップのスムージング方法および素子チップの製造方法 |
Also Published As
Publication number | Publication date |
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TW201507060A (zh) | 2015-02-16 |
CN105359256A (zh) | 2016-02-24 |
KR102250628B1 (ko) | 2021-05-12 |
WO2015002725A1 (en) | 2015-01-08 |
JP6513082B2 (ja) | 2019-05-15 |
TWI635569B (zh) | 2018-09-11 |
CN105359256B (zh) | 2019-07-16 |
KR20160029097A (ko) | 2016-03-14 |
US20150011073A1 (en) | 2015-01-08 |
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