JP2016526279A - 空間的に分散されたガス流路を有する流量制御ライナー - Google Patents
空間的に分散されたガス流路を有する流量制御ライナー Download PDFInfo
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87265—Dividing into parallel flow paths with recombining
Abstract
Description
Claims (15)
- 基板処理チャンバの内面を保護するためのライナーアセンブリであって、
前記基板処理チャンバの前記内面によって収容されるように大きさが決められた外面及び基板処理容積を画定する内面を有するリング形状の本体を備え、前記リング形状の本体は複数のガス流路を含み、前記複数のガス流路は前記外面を前記基板処理容積に結合し、且つ前記複数のガス流路の各々はガス注入口に結合し、前記ガス流を調整するライナーアセンブリ。 - 前記複数のガス流路の各々は傾斜したチャネルを備える、請求項1に記載のライナーアセンブリ。
- 前記複数のガス流路の各々は前記傾斜したチャネルに結合された水平チャネルを更に備え、前記水平チャネルは前記リング形状の本体の前記外面に対して開かれ、前記傾斜したチャネルは前記リング形状の本体の前記内面に対して開かれている、請求項2に記載のライナーアセンブリ。
- 前記リング形状の本体の前記内面に装着された注入リングを更に備え、前記注入リングはそこを通って形成される複数の水平チャネルを有し、前記複数の水平チャネルの各々は、前記複数の傾斜したチャネルの対応する1つに揃えられ、結合される、請求項3に記載のライナーアセンブリ。
- 前記内面上で前記リング形状の本体に取り付けられた複数の注入ブロックを更に備え、各注入ブロックはそこを通って形成される水平チャネルを含み、各注入ブロックの前記水平チャネルは前記傾斜したチャネルの対応する1つに揃えられる、請求項3に記載のライナーアセンブリ。
- 前記注入ブロックを通って形成される前記水平チャネルは互いに平行である、請求項5に記載のライナーアセンブリ。
- 前記複数のガス流路の各々は、第1の水平部分及び垂直部分を含み、前記第1の水平部分は前記リング形状の本体の前記外面に対して開かれ、前記垂直部分は前記リング形状の本体の上面に対して開かれる上端及び前記第1の水平部分と結合する下端を有する、請求項1に記載のライナーアセンブリ。
- 前記リング形状の本体の前記上面からの前記複数の垂直チャネルの上端に配置される複数の挿入物を更に備え、前記複数のガス流路の各々は、前記リング形状の本体の前記内面に対して開かれる第2の水平部分を更に含み、前記第2の水平部分は前記挿入物下方で前記垂直部分に結合される、請求項7に記載のライナーアセンブリ。
- 前記リング形状のライナー本体の上方に配置される上方ライナーを更に備え、前記上方ライナーは前記複数のガス流路に揃えられる複数のフローガイドを含む、請求項1に記載のライナーアセンブリ。
- 前記複数のガス流路の各々は、水平部分及び垂直部分を含み、前記水平部分は前記リング形状の本体の外面に対して開かれ、前記垂直部分は前記リング形状の本体の上面に対して開かれる上端及び前記水平部分に結合する下端を有し、前記垂直部分の上端はフローガイドの対応する1つに結合する、請求項9に記載のライナーアセンブリ。
- チャンバ内部を取り囲むチャンバ本体であって、注入口及び排出口はチャンバ本体の対向する側面に形成され、基板開口部は前記注入口と前記排出口との間に形成されるチャンバ本体と、
前記注入開口部に配置されるガス注入口と、
前記チャンバ内部に配置される基板支持体と、
前記チャンバ本体の内面を保護し、前記ガス注入口のガス流を調整するために配置されるライナーアセンブリと
を備える基板を処理するための装置であって、前記ライナーは前記チャンバ本体の前記内面によって収容されるように大きさが決められた外面を有するリング形状の本体を備え、前記リング形状の本体の内面は基板処理容積を画定し、前記リング形状の本体は複数のガス流路を含み、前記複数のガス流路は前記外面を前記基板処理容積に結合し、前記複数のガス流路の各々はガス注入口に結合し、前記ガス流を調整する装置。 - 前記ライナーアセンブリの前記複数のガス流路の各々は傾斜したチャネルを含む、請求項11に記載の装置。
- 前記ライナーアセンブリは、前記リング形状のライナー本体の上方に配置される上方ライナーを更に備え、前記上方ライナーは前記複数のガス流路に揃えられる複数のフローガイドを含む、請求項11に記載の装置。
- 前記複数のガス流路の各々は、第1の水平部分と垂直部分を含み、前記第1の水平部分は前記リング形状の本体の前記外面に対して開かれ、前記垂直部分は前記リング形状の本体の上面に対して開かれる上端及び前記第1の水平部分と結合する下端を有する、請求項11に記載の装置。
- 基板を処理するための方法であって、
複数の加熱素子からの放射エネルギーを基板処理チャンバ内部に配向すること、及び
前記処理チャンバ内に配置されるライナーアセンブリ内に形成される複数のガス流路を使用して処理ガスの流れを調整することを含み、前記ライナーアセンブリは、前記チャンバ本体の前記内面によって収容されるように大きさが決められた外面及び基板処理容積を画定する内面を有するリング形状の本体を備え、前記リング形状の本体は、前記外面を前記基板処理容積に結合する複数のガス流路を含み、前記複数のガス流路の各々はガス注入口に結合し、前記ガス流を調整するように設計されている方法。
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US201361817691P | 2013-04-30 | 2013-04-30 | |
US61/817,691 | 2013-04-30 | ||
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JP2016526279A true JP2016526279A (ja) | 2016-09-01 |
JP2016526279A5 JP2016526279A5 (ja) | 2017-06-08 |
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JP (1) | JP6368773B2 (ja) |
KR (2) | KR20160003831A (ja) |
CN (3) | CN111211074B (ja) |
TW (2) | TWI613318B (ja) |
WO (1) | WO2014179093A1 (ja) |
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US20180033652A1 (en) | 2018-02-01 |
CN105164788A (zh) | 2015-12-16 |
US20140322897A1 (en) | 2014-10-30 |
TW201447032A (zh) | 2014-12-16 |
CN111211074B (zh) | 2023-09-22 |
CN111211074A (zh) | 2020-05-29 |
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US9842748B2 (en) | 2017-12-12 |
TWI679299B (zh) | 2019-12-11 |
CN107833848B (zh) | 2021-12-07 |
CN105164788B (zh) | 2020-02-14 |
WO2014179093A1 (en) | 2014-11-06 |
US10170342B2 (en) | 2019-01-01 |
TWI613318B (zh) | 2018-02-01 |
US9553002B2 (en) | 2017-01-24 |
JP6368773B2 (ja) | 2018-08-01 |
US20170125265A1 (en) | 2017-05-04 |
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