JP2016523442A - 高性能コーティングの堆積方法及びカプセル化電子デバイス - Google Patents

高性能コーティングの堆積方法及びカプセル化電子デバイス Download PDF

Info

Publication number
JP2016523442A
JP2016523442A JP2016524299A JP2016524299A JP2016523442A JP 2016523442 A JP2016523442 A JP 2016523442A JP 2016524299 A JP2016524299 A JP 2016524299A JP 2016524299 A JP2016524299 A JP 2016524299A JP 2016523442 A JP2016523442 A JP 2016523442A
Authority
JP
Japan
Prior art keywords
layer
substrate
given embodiment
electrodes
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016524299A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016523442A5 (enExample
Inventor
サバス、ステファン、イー
ウィースノスキー、アラン、ビー
ガレウスキー、カール
Original Assignee
アイクストロン、エスイー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アイクストロン、エスイー filed Critical アイクストロン、エスイー
Publication of JP2016523442A publication Critical patent/JP2016523442A/ja
Publication of JP2016523442A5 publication Critical patent/JP2016523442A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8423—Metallic sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
JP2016524299A 2013-06-29 2014-06-30 高性能コーティングの堆積方法及びカプセル化電子デバイス Pending JP2016523442A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361841287P 2013-06-29 2013-06-29
US61/841,287 2013-06-29
US201461976420P 2014-04-07 2014-04-07
US61/976,420 2014-04-07
PCT/US2014/044954 WO2014210613A1 (en) 2013-06-29 2014-06-30 Method for deposition of high-performance coatings and encapsulated electronic devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016000447A Division JP6370816B2 (ja) 2013-06-29 2016-01-05 高性能コーティングの堆積装置

Publications (2)

Publication Number Publication Date
JP2016523442A true JP2016523442A (ja) 2016-08-08
JP2016523442A5 JP2016523442A5 (enExample) 2016-09-23

Family

ID=52142762

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016524299A Pending JP2016523442A (ja) 2013-06-29 2014-06-30 高性能コーティングの堆積方法及びカプセル化電子デバイス
JP2016000447A Active JP6370816B2 (ja) 2013-06-29 2016-01-05 高性能コーティングの堆積装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016000447A Active JP6370816B2 (ja) 2013-06-29 2016-01-05 高性能コーティングの堆積装置

Country Status (6)

Country Link
US (1) US9831466B2 (enExample)
EP (1) EP3014675B1 (enExample)
JP (2) JP2016523442A (enExample)
KR (2) KR101772135B1 (enExample)
CN (2) CN105720207B (enExample)
WO (1) WO2014210613A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022534801A (ja) * 2019-06-06 2022-08-03 アプライド マテリアルズ インコーポレイテッド 高エネルギー低線量プラズマを用いた窒化ケイ素ベースの誘電体膜の後処理の方法
JP2023501782A (ja) * 2019-11-01 2023-01-19 アプライド マテリアルズ インコーポレイテッド 表面を包む材料層
JP2023166530A (ja) * 2016-08-10 2023-11-21 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6253070B2 (ja) * 2013-09-30 2017-12-27 エルジー・ケム・リミテッド 有機電子素子用基板およびこの製造方法
EP2983224B1 (en) * 2013-09-30 2020-08-26 LG Display Co., Ltd. Organic electronic device
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9818976B2 (en) 2014-05-13 2017-11-14 Apple Inc. Encapsulation layers with improved reliability
JPWO2016043084A1 (ja) * 2014-09-18 2017-07-27 旭硝子株式会社 発光素子および発電素子
WO2016059497A1 (en) * 2014-10-17 2016-04-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, module, electronic device, and method for manufacturing light-emitting device
CN105118844A (zh) * 2015-07-01 2015-12-02 深圳市华星光电技术有限公司 一种柔性显示面板的制备方法及柔性显示面板
US9793450B2 (en) * 2015-11-24 2017-10-17 Samsung Electronics Co., Ltd. Light emitting apparatus having one or more ridge structures defining at least one circle around a common center
JP2017147191A (ja) 2016-02-19 2017-08-24 株式会社ジャパンディスプレイ 表示装置、及び表示装置の製造方法
US10294562B2 (en) 2016-04-05 2019-05-21 Aixtron Se Exhaust manifold in a CVD reactor
KR101793897B1 (ko) * 2016-05-17 2017-11-06 주식회사 테스 발광소자의 보호막 증착방법
KR101801545B1 (ko) * 2016-05-18 2017-12-20 주식회사 테스 발광소자의 보호막 증착방법
KR20180028850A (ko) * 2016-09-09 2018-03-19 엘지디스플레이 주식회사 유기 발광 표시 장치
JP2019530254A (ja) * 2016-09-20 2019-10-17 イヌル ゲーエムベーハー オプトエレクトロニクス部品用の拡散制限電気活性障壁層
US11751426B2 (en) * 2016-10-18 2023-09-05 Universal Display Corporation Hybrid thin film permeation barrier and method of making the same
US10738375B2 (en) 2016-11-15 2020-08-11 HPVico AB Hard thin films
CN108269827A (zh) * 2017-01-03 2018-07-10 昆山工研院新型平板显示技术中心有限公司 薄膜封装结构、柔性显示面板、及薄膜封装结构制作方法
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법
US10516100B2 (en) 2017-06-12 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
KR20190005741A (ko) * 2017-07-07 2019-01-16 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법 및 금속 산화물 막의 형성 방법
KR102569956B1 (ko) * 2017-07-25 2023-08-22 어플라이드 머티어리얼스, 인코포레이티드 개선된 박막 캡슐화
US10353123B2 (en) 2017-08-08 2019-07-16 Apple Inc. Electronic Devices with glass layer coatings
CN109411417B (zh) 2017-08-18 2020-09-11 财团法人工业技术研究院 电子组件封装体以及显示面板
JP6805099B2 (ja) * 2017-09-08 2020-12-23 株式会社Ｊｏｌｅｄ 有機ｅｌ表示パネル、有機ｅｌ表示装置、およびその製造方法
CN108649138B (zh) * 2018-04-28 2020-09-04 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
WO2020188313A2 (en) * 2018-07-10 2020-09-24 Next Biometrics Group Asa Thermally conductive and protective coating for electronic device
CN110752308A (zh) * 2018-07-24 2020-02-04 Tcl集团股份有限公司 隔离膜、顶发射光电器件及其制造方法和应用
CN109509844A (zh) * 2018-10-26 2019-03-22 武汉华星光电半导体显示技术有限公司 Oled显示面板
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
DE102019117534B4 (de) * 2019-06-28 2022-03-03 Infineon Technologies Ag Anorganisches Verkapselungsmittel für eine elektronische Komponente mit Haftvermittler
EP4031691A4 (en) * 2019-09-20 2022-11-09 National University of Singapore ELECTRONIC DEVICE WITH ONE OR MORE SINGLE-LAYER AMORPHOUS FILMS AND METHOD FOR PRODUCTION THEREOF
CN110752312A (zh) * 2019-10-30 2020-02-04 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置
WO2021229553A1 (en) * 2020-05-15 2021-11-18 Oti Lumionics Inc. Nucleation-inhibiting coating containing rare earth compounds and devices incorporating same
JP2023535017A (ja) * 2020-07-21 2023-08-15 アプライド マテリアルズ インコーポレイテッド Ｏｌｅｄディスプレイピクセルのための空間光学分別器および層アーキテクチャ
DE102020123076A1 (de) * 2020-09-03 2022-03-03 Aixtron Se Gaseinlassorgan eines CVD-Reaktors mit zwei Einspeisestellen
KR20220031837A (ko) * 2020-09-04 2022-03-14 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
KR102648964B1 (ko) * 2021-09-29 2024-03-20 한국과학기술연구원 우수한 광투과도, 내수분침투성 및 내산소침투성을 구비한 플렉서블 투명전극 구조 및 그 제조방법 그리고 이를 이용한 유기광전자소자
JP2024546043A (ja) * 2021-11-15 2024-12-17 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 多層窒化ケイ素膜
KR20230071933A (ko) * 2021-11-16 2023-05-24 삼성디스플레이 주식회사 윈도우, 및 이를 포함하는 표시 장치
CN115064320A (zh) * 2022-07-22 2022-09-16 业成科技（成都）有限公司 导电层及其制作方法和电子设备
EP4576215A4 (en) * 2022-08-23 2025-10-29 Boe Technology Group Co Ltd DISPLAY PANEL AND ITS MANUFACTURING PROCESS, AND DISPLAY APPARATUS
CN115437058A (zh) * 2022-09-26 2022-12-06 福建福晶科技股份有限公司 一种谐振光栅偏振器及制备方法
CN118231501B (zh) * 2023-07-31 2024-09-17 江苏思尔德科技有限公司 一种柔性光伏用高阻隔膜制备方法
CN119029069B (zh) * 2024-08-28 2025-06-10 天津大学 一种柔性高阻隔复合薄膜及其制备方法和应用
KR102878866B1 (ko) * 2024-11-18 2025-10-31 한국생산기술연구원 대면적 유연 기판의 열 안정성 개선 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001506925A (ja) * 1996-12-23 2001-05-29 エフエスアイ インターナショナル インコーポレーティッド 回転可能で移動可能な噴霧ノズル
JP2007123174A (ja) * 2005-10-31 2007-05-17 Canon Inc 有機エレクトロルミネッセンス素子
JP2007526601A (ja) * 2004-02-20 2007-09-13 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 拡散バリア層および拡散バリア層の製造方法
WO2009028485A1 (ja) * 2007-08-31 2009-03-05 Tokyo Electron Limited 有機電子デバイス、有機電子デバイスの製造方法、有機電子デバイスの製造装置、基板処理システム、保護膜の構造体、および制御プログラムが記憶された記憶媒体
JP2009111162A (ja) * 2007-10-30 2009-05-21 Fujifilm Corp シリコン窒化物膜の製造方法、ガスバリア膜、薄膜素子
JP2009133000A (ja) * 2007-10-30 2009-06-18 Fujifilm Corp シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子
US20120225218A1 (en) * 2011-01-10 2012-09-06 Plasmasi, Inc. Apparatus and method for dielectric deposition

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
JP2537304B2 (ja) * 1989-12-07 1996-09-25 新技術事業団 大気圧プラズマ反応方法とその装置
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6573652B1 (en) * 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
JP2001274156A (ja) 2000-03-27 2001-10-05 Sasaki Wataru 真空紫外光による酸化膜形成方法
US6578369B2 (en) * 2001-03-28 2003-06-17 Fsi International, Inc. Nozzle design for generating fluid streams useful in the manufacture of microelectronic devices
US6630980B2 (en) * 2001-04-17 2003-10-07 General Electric Company Transparent flexible barrier for liquid crystal display devices and method of making the same
US7265807B2 (en) 2001-12-13 2007-09-04 Koninklijke Philips Electronics N.V. Sealing structure for display devices
US7086918B2 (en) * 2002-12-11 2006-08-08 Applied Materials, Inc. Low temperature process for passivation applications
US6812637B2 (en) 2003-03-13 2004-11-02 Eastman Kodak Company OLED display with auxiliary electrode
KR100623563B1 (ko) * 2003-05-27 2006-09-13 마츠시다 덴코 가부시키가이샤 플라즈마 처리 장치, 플라즈마를 발생하는 반응 용기의제조 방법 및 플라즈마 처리 방법
JP4784308B2 (ja) 2003-05-29 2011-10-05 コニカミノルタホールディングス株式会社 ディスプレイ基板用透明フィルム、該フィルムを用いたディスプレイ基板およびその製造方法、液晶ディスプレイ、有機エレクトロルミネッセンスディスプレイ、およびタッチパネル
EP1647056B1 (en) 2003-07-11 2017-04-12 Koninklijke Philips N.V. Encapsulation structure for display devices
JP2005063850A (ja) 2003-08-14 2005-03-10 Ran Technical Service Kk 有機ｅｌディスプレイパネル及びその製造方法
WO2006007313A2 (en) * 2004-06-25 2006-01-19 Applied Materials, Inc. Improving water-barrier performance of an encapsulating film
KR101210859B1 (ko) * 2004-08-18 2012-12-11 다우 코닝 코포레이션 피복 기판 및 이의 제조방법
WO2006067952A1 (ja) 2004-12-20 2006-06-29 Konica Minolta Holdings, Inc. ガスバリア性薄膜積層体、ガスバリア性樹脂基材、有機ｅｌデバイス
KR101351816B1 (ko) * 2005-07-06 2014-01-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 및 전자 기기
US9166197B2 (en) 2005-08-29 2015-10-20 The Hong Kong University Of Science And Technology Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device
WO2008083301A1 (en) * 2006-12-28 2008-07-10 Exatec, Llc Apparatus and method for plasma arc coating
US8241713B2 (en) * 2007-02-21 2012-08-14 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
US20110122486A1 (en) * 2007-02-23 2011-05-26 Technische Universität Kaiserslautern Plasma-Deposited Electrically Insulating, Diffusion-Resistant and Elastic Layer System
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
KR101842675B1 (ko) 2009-07-08 2018-03-27 플라즈마시, 인크. 플라즈마 처리를 위한 장치 및 방법
FR2949775B1 (fr) * 2009-09-10 2013-08-09 Saint Gobain Performance Plast Substrat de protection pour dispositif collecteur ou emetteur de rayonnement
US9660218B2 (en) * 2009-09-15 2017-05-23 Industrial Technology Research Institute Package of environmental sensitive element
JP2012216452A (ja) * 2011-04-01 2012-11-08 Hitachi High-Technologies Corp 光半導体装置およびその製造方法
US9299956B2 (en) * 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001506925A (ja) * 1996-12-23 2001-05-29 エフエスアイ インターナショナル インコーポレーティッド 回転可能で移動可能な噴霧ノズル
JP2007526601A (ja) * 2004-02-20 2007-09-13 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 拡散バリア層および拡散バリア層の製造方法
JP2007123174A (ja) * 2005-10-31 2007-05-17 Canon Inc 有機エレクトロルミネッセンス素子
WO2009028485A1 (ja) * 2007-08-31 2009-03-05 Tokyo Electron Limited 有機電子デバイス、有機電子デバイスの製造方法、有機電子デバイスの製造装置、基板処理システム、保護膜の構造体、および制御プログラムが記憶された記憶媒体
JP2009111162A (ja) * 2007-10-30 2009-05-21 Fujifilm Corp シリコン窒化物膜の製造方法、ガスバリア膜、薄膜素子
JP2009133000A (ja) * 2007-10-30 2009-06-18 Fujifilm Corp シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子
US20120225218A1 (en) * 2011-01-10 2012-09-06 Plasmasi, Inc. Apparatus and method for dielectric deposition

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023166530A (ja) * 2016-08-10 2023-11-21 株式会社半導体エネルギー研究所 表示装置及び表示装置の作製方法
JP2022534801A (ja) * 2019-06-06 2022-08-03 アプライド マテリアルズ インコーポレイテッド 高エネルギー低線量プラズマを用いた窒化ケイ素ベースの誘電体膜の後処理の方法
JP7556891B2 (ja) 2019-06-06 2024-09-26 アプライド マテリアルズ インコーポレイテッド 高エネルギー低線量プラズマを用いた窒化ケイ素ベースの誘電体膜の後処理の方法
US12230499B2 (en) 2019-06-06 2025-02-18 Applied Materials, Inc. Methods of post treating silicon nitride based dielectric films with high energy low dose plasma
JP2023501782A (ja) * 2019-11-01 2023-01-19 アプライド マテリアルズ インコーポレイテッド 表面を包む材料層
JP7594587B2 (ja) 2019-11-01 2024-12-04 アプライド マテリアルズ インコーポレイテッド 表面を包む材料層

Also Published As

Publication number Publication date
US9831466B2 (en) 2017-11-28
KR101947796B1 (ko) 2019-04-22
EP3014675B1 (en) 2019-05-15
EP3014675A1 (en) 2016-05-04
WO2014210613A1 (en) 2014-12-31
KR101772135B1 (ko) 2017-09-12
CN105720207A (zh) 2016-06-29
JP2016164303A (ja) 2016-09-08
KR20160008608A (ko) 2016-01-22
EP3014675A4 (en) 2017-03-08
CN105556698B (zh) 2019-06-11
CN105720207B (zh) 2017-09-15
US20160111684A1 (en) 2016-04-21
JP6370816B2 (ja) 2018-08-08
CN105556698A (zh) 2016-05-04
KR20160016855A (ko) 2016-02-15

Similar Documents

Publication Publication Date Title
JP6370816B2 (ja) 高性能コーティングの堆積装置
US9299956B2 (en) Method for deposition of high-performance coatings and encapsulated electronic devices
CN104115300B (zh) 沉积包封膜的方法
KR102374497B1 (ko) 적층 필름 및 플렉시블 전자 디바이스
WO2014123201A1 (ja) ガスバリア性フィルム、およびその製造方法
Lee et al. Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
KR102098226B1 (ko) 플라즈마 cvd법에 의하여 형성된 화학 증착막
KR20140087470A (ko) 발광소자의 보호막 증착방법
CN109155343B (zh) 发光二极管的保护膜的沉积方法
CN108780851B (zh) 发光元件的保护膜沉积方法
CN109075263B (zh) 发光二极管的保护膜的沉积方法
KR20160049002A (ko) 기능성 막
WO2012165944A1 (en) Hot wire chemical vapour deposition process for producing an inorganic-polymer multi-layer stack
KR101644038B1 (ko) 투명 도전성 필름, 이의 제조 방법 및 이를 포함하는 터치패널
KR20190054940A (ko) 가스 배리어 막, 가스 배리어 필름, 유기 일렉트로루미네센스 소자 및 전자 페이퍼, 그리고 가스 배리어 필름의 제조 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160106

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20160104

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170615

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180521

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180703

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180919

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190305