JP2016523379A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016523379A5 JP2016523379A5 JP2016520411A JP2016520411A JP2016523379A5 JP 2016523379 A5 JP2016523379 A5 JP 2016523379A5 JP 2016520411 A JP2016520411 A JP 2016520411A JP 2016520411 A JP2016520411 A JP 2016520411A JP 2016523379 A5 JP2016523379 A5 JP 2016523379A5
- Authority
- JP
- Japan
- Prior art keywords
- alignment mark
- reference point
- line scan
- substrate
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 85
- 238000000034 method Methods 0.000 claims description 48
- 230000003595 spectral effect Effects 0.000 claims description 22
- 238000003384 imaging method Methods 0.000 claims description 19
- 230000005670 electromagnetic radiation Effects 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000004626 scanning electron microscopy Methods 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 230000007704 transition Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005305 interferometry Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013211403.6A DE102013211403B4 (de) | 2013-06-18 | 2013-06-18 | Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske |
| DE102013211403.6 | 2013-06-18 | ||
| PCT/EP2014/062533 WO2014202517A2 (de) | 2013-06-18 | 2014-06-16 | Verfahren und vorrichtung zum automatisierten bestimmen eines referenzpunktes einer ausrichtungsmarkierung auf einem substrat einer photolithographischen maske |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016523379A JP2016523379A (ja) | 2016-08-08 |
| JP2016523379A5 true JP2016523379A5 (enExample) | 2018-11-08 |
| JP6482137B2 JP6482137B2 (ja) | 2019-03-13 |
Family
ID=51014273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016520411A Active JP6482137B2 (ja) | 2013-06-18 | 2014-06-16 | フォトリソグラフィマスクの基板上のアラインメントマークの基準点の自動決定のための方法及びデバイス |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9863760B2 (enExample) |
| JP (1) | JP6482137B2 (enExample) |
| DE (1) | DE102013211403B4 (enExample) |
| WO (1) | WO2014202517A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014213198B4 (de) | 2014-07-08 | 2020-08-06 | Carl Zeiss Ag | Verfahren zur Lokalisierung von Defekten auf Substraten |
| JP6718225B2 (ja) * | 2015-12-02 | 2020-07-08 | 株式会社エスケーエレクトロニクス | フォトマスクおよびその製造方法 |
| EP3800505A1 (en) * | 2019-10-03 | 2021-04-07 | ASML Netherlands B.V. | Measurement system and method for characterizing a patterning device |
| DE102020007626A1 (de) | 2020-12-14 | 2022-06-15 | Innolite Gmbh | Spannsystem mit einer Grundträgerplatte, Fixiereinheit für ein Spannsystem sowie Verfahren zur Verwendung eines Spannsystems |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0195161B1 (en) * | 1985-03-14 | 1993-09-15 | Nikon Corporation | Apparatus for automatically inspecting objects and identifying or recognizing known and unknown portions thereof, including defects and the like and method |
| JPS63166228A (ja) * | 1986-12-27 | 1988-07-09 | Canon Inc | 位置検出装置 |
| JPS63191041A (ja) * | 1987-02-03 | 1988-08-08 | Komori Printing Mach Co Ltd | 濃度測定位置合わせ方法 |
| JP2622573B2 (ja) * | 1988-01-27 | 1997-06-18 | キヤノン株式会社 | マーク検知装置及び方法 |
| JPH0513306A (ja) | 1991-07-03 | 1993-01-22 | Fujitsu Ltd | マスク位置測定装置 |
| KR100467858B1 (ko) * | 1996-02-05 | 2005-11-01 | 가부시키가이샤 니콘 | 정렬,노광방법및노광장치 |
| JP3580992B2 (ja) * | 1997-09-18 | 2004-10-27 | 旭化成マイクロシステム株式会社 | フォトマスク |
| JP2000260699A (ja) * | 1999-03-09 | 2000-09-22 | Canon Inc | 位置検出装置及び該位置検出装置を用いた半導体露光装置 |
| JP4536845B2 (ja) * | 1999-05-17 | 2010-09-01 | 株式会社キーエンス | 共焦点顕微鏡 |
| AU2001232256A1 (en) * | 2000-03-02 | 2001-09-12 | Nikon Corporation | Position measuring apparatus and aligner |
| US20040121069A1 (en) * | 2002-08-08 | 2004-06-24 | Ferranti David C. | Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope |
| JP2004111473A (ja) * | 2002-09-13 | 2004-04-08 | Nikon Corp | 位置検出方法及び装置、露光方法及び装置 |
| JP2004235354A (ja) * | 2003-01-29 | 2004-08-19 | Canon Inc | 露光装置 |
| JP2004296921A (ja) * | 2003-03-27 | 2004-10-21 | Canon Inc | 位置検出装置 |
| JP2004356276A (ja) * | 2003-05-28 | 2004-12-16 | Riipuru:Kk | 荷電粒子ビーム近接露光方法及び装置 |
| IL156589A0 (en) * | 2003-06-23 | 2004-01-04 | Nova Measuring Instr Ltd | Method and system for automatic target finding |
| US20050205781A1 (en) * | 2004-01-08 | 2005-09-22 | Toshifumi Kimba | Defect inspection apparatus |
| DE102004032933B3 (de) | 2004-07-07 | 2006-01-05 | Süss Microtec Lithography Gmbh | Mittelpunktbestimmung von drehsymmetrischen Justiermarken |
| JP4788229B2 (ja) * | 2005-08-08 | 2011-10-05 | 株式会社ニコン | 位置検出装置、アライメント装置、露光装置及びマイクロデバイスの製造方法 |
| US7898653B2 (en) * | 2006-12-20 | 2011-03-01 | Hitachi High-Technologies Corporation | Foreign matter inspection apparatus |
| KR101435124B1 (ko) * | 2008-04-29 | 2014-08-29 | 삼성전자 주식회사 | 노광 장치의 정렬 방법, 이를 이용한 감광막의 노광 방법및 감광막의 노광 방법을 수행하기 위한 노광 장치 |
| JP2010219445A (ja) * | 2009-03-18 | 2010-09-30 | Nuflare Technology Inc | 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置 |
| JP2011066185A (ja) * | 2009-09-17 | 2011-03-31 | Ushio Inc | ワークアライメントマークの検出方法および露光装置 |
| JP6460617B2 (ja) * | 2012-02-10 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 |
-
2013
- 2013-06-18 DE DE102013211403.6A patent/DE102013211403B4/de active Active
-
2014
- 2014-06-16 WO PCT/EP2014/062533 patent/WO2014202517A2/de not_active Ceased
- 2014-06-16 JP JP2016520411A patent/JP6482137B2/ja active Active
- 2014-06-16 US US14/899,979 patent/US9863760B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5864752B2 (ja) | 焦点補正を決定する方法、リソグラフィ処理セル及びデバイス製造方法 | |
| CN107924140B (zh) | 测量光刻工艺参数的方法和设备、衬底以及该方法中使用的图案化装置 | |
| TWI414783B (zh) | 確認於基板中的缺陷之方法及用於在微影處理中曝露基板之裝置 | |
| JP2008160110A (ja) | 投影システムの焦点面に対して基板のターゲット部分を位置合わせする方法 | |
| TWI646409B (zh) | 位階感測器設備、測量橫跨基板之構形變化的方法、測量關於微影製程的物理參數之變化的方法及微影設備 | |
| KR20190112787A (ko) | 메트롤로지 방법 및 장치 및 연계된 컴퓨터 제품 | |
| JP3477777B2 (ja) | 投影露光装置およびその方法 | |
| JP6482137B2 (ja) | フォトリソグラフィマスクの基板上のアラインメントマークの基準点の自動決定のための方法及びデバイス | |
| JPH06349696A (ja) | 投影露光装置及びそれを用いた半導体製造装置 | |
| US8305587B2 (en) | Apparatus for the optical inspection of wafers | |
| JP2016523379A5 (enExample) | ||
| TWI460559B (zh) | 用於微影裝置之位階感測器配置、微影裝置及器件製造方法 | |
| JP6608130B2 (ja) | 計測装置、リソグラフィ装置、及び物品の製造方法 | |
| CN116529673A (zh) | 量测方法及相关量测和光刻装置 | |
| KR102819741B1 (ko) | 정렬 방법 및 연관된 정렬 및 리소그래피 장치 | |
| CN114514475A (zh) | 用于表征图案形成装置的测量系统和方法 | |
| CN108700833A (zh) | 量测方法和光刻方法、光刻单元和计算机程序 | |
| TWI616732B (zh) | 具有感測器之設備及執行目標量測之方法 | |
| TWI734113B (zh) | 帶寬計算系統、標記偵測系統、微影裝置及用於判定測量光束之期望波長帶寬之方法 | |
| TW202321838A (zh) | 度量衡方法及設備 | |
| CN100445870C (zh) | 处理具有倾斜特征的掩模的系统与方法 | |
| WO2023241867A1 (en) | Calibration method and apparatus | |
| TW202514287A (zh) | 勘測基板上之表面高度的方法及設備 | |
| JP2001223147A (ja) | 投影露光方法、露光装置およびデバイス製造方法 | |
| NL2024432A (en) | Alignment method and associated alignment and lithographic apparatuses |