JP6482137B2 - フォトリソグラフィマスクの基板上のアラインメントマークの基準点の自動決定のための方法及びデバイス - Google Patents

フォトリソグラフィマスクの基板上のアラインメントマークの基準点の自動決定のための方法及びデバイス Download PDF

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JP6482137B2
JP6482137B2 JP2016520411A JP2016520411A JP6482137B2 JP 6482137 B2 JP6482137 B2 JP 6482137B2 JP 2016520411 A JP2016520411 A JP 2016520411A JP 2016520411 A JP2016520411 A JP 2016520411A JP 6482137 B2 JP6482137 B2 JP 6482137B2
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Japan
Prior art keywords
alignment mark
reference point
line scan
substrate
line
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Japanese (ja)
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JP2016523379A (ja
JP2016523379A5 (enExample
Inventor
ミヒャエル ブダッハ
ミヒャエル ブダッハ
ラルフ シェーンベルガー
ラルフ シェーンベルガー
ミヒャエル ヨースト
ミヒャエル ヨースト
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Image Analysis (AREA)
JP2016520411A 2013-06-18 2014-06-16 フォトリソグラフィマスクの基板上のアラインメントマークの基準点の自動決定のための方法及びデバイス Active JP6482137B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013211403.6A DE102013211403B4 (de) 2013-06-18 2013-06-18 Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske
DE102013211403.6 2013-06-18
PCT/EP2014/062533 WO2014202517A2 (de) 2013-06-18 2014-06-16 Verfahren und vorrichtung zum automatisierten bestimmen eines referenzpunktes einer ausrichtungsmarkierung auf einem substrat einer photolithographischen maske

Publications (3)

Publication Number Publication Date
JP2016523379A JP2016523379A (ja) 2016-08-08
JP2016523379A5 JP2016523379A5 (enExample) 2018-11-08
JP6482137B2 true JP6482137B2 (ja) 2019-03-13

Family

ID=51014273

Family Applications (1)

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JP2016520411A Active JP6482137B2 (ja) 2013-06-18 2014-06-16 フォトリソグラフィマスクの基板上のアラインメントマークの基準点の自動決定のための方法及びデバイス

Country Status (4)

Country Link
US (1) US9863760B2 (enExample)
JP (1) JP6482137B2 (enExample)
DE (1) DE102013211403B4 (enExample)
WO (1) WO2014202517A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014213198B4 (de) 2014-07-08 2020-08-06 Carl Zeiss Ag Verfahren zur Lokalisierung von Defekten auf Substraten
JP6718225B2 (ja) * 2015-12-02 2020-07-08 株式会社エスケーエレクトロニクス フォトマスクおよびその製造方法
EP3800505A1 (en) * 2019-10-03 2021-04-07 ASML Netherlands B.V. Measurement system and method for characterizing a patterning device
DE102020007626A1 (de) 2020-12-14 2022-06-15 Innolite Gmbh Spannsystem mit einer Grundträgerplatte, Fixiereinheit für ein Spannsystem sowie Verfahren zur Verwendung eines Spannsystems

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JPS63166228A (ja) * 1986-12-27 1988-07-09 Canon Inc 位置検出装置
JPS63191041A (ja) * 1987-02-03 1988-08-08 Komori Printing Mach Co Ltd 濃度測定位置合わせ方法
JP2622573B2 (ja) * 1988-01-27 1997-06-18 キヤノン株式会社 マーク検知装置及び方法
JPH0513306A (ja) 1991-07-03 1993-01-22 Fujitsu Ltd マスク位置測定装置
KR100467858B1 (ko) * 1996-02-05 2005-11-01 가부시키가이샤 니콘 정렬,노광방법및노광장치
JP3580992B2 (ja) * 1997-09-18 2004-10-27 旭化成マイクロシステム株式会社 フォトマスク
JP2000260699A (ja) * 1999-03-09 2000-09-22 Canon Inc 位置検出装置及び該位置検出装置を用いた半導体露光装置
JP4536845B2 (ja) * 1999-05-17 2010-09-01 株式会社キーエンス 共焦点顕微鏡
AU2001232256A1 (en) * 2000-03-02 2001-09-12 Nikon Corporation Position measuring apparatus and aligner
US20040121069A1 (en) * 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
JP2004111473A (ja) * 2002-09-13 2004-04-08 Nikon Corp 位置検出方法及び装置、露光方法及び装置
JP2004235354A (ja) * 2003-01-29 2004-08-19 Canon Inc 露光装置
JP2004296921A (ja) * 2003-03-27 2004-10-21 Canon Inc 位置検出装置
JP2004356276A (ja) * 2003-05-28 2004-12-16 Riipuru:Kk 荷電粒子ビーム近接露光方法及び装置
IL156589A0 (en) * 2003-06-23 2004-01-04 Nova Measuring Instr Ltd Method and system for automatic target finding
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DE102004032933B3 (de) 2004-07-07 2006-01-05 Süss Microtec Lithography Gmbh Mittelpunktbestimmung von drehsymmetrischen Justiermarken
JP4788229B2 (ja) * 2005-08-08 2011-10-05 株式会社ニコン 位置検出装置、アライメント装置、露光装置及びマイクロデバイスの製造方法
US7898653B2 (en) * 2006-12-20 2011-03-01 Hitachi High-Technologies Corporation Foreign matter inspection apparatus
KR101435124B1 (ko) * 2008-04-29 2014-08-29 삼성전자 주식회사 노광 장치의 정렬 방법, 이를 이용한 감광막의 노광 방법및 감광막의 노광 방법을 수행하기 위한 노광 장치
JP2010219445A (ja) * 2009-03-18 2010-09-30 Nuflare Technology Inc 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置
JP2011066185A (ja) * 2009-09-17 2011-03-31 Ushio Inc ワークアライメントマークの検出方法および露光装置
JP6460617B2 (ja) * 2012-02-10 2019-01-30 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法

Also Published As

Publication number Publication date
US20160138907A1 (en) 2016-05-19
US9863760B2 (en) 2018-01-09
WO2014202517A3 (de) 2015-02-26
DE102013211403A1 (de) 2014-12-18
JP2016523379A (ja) 2016-08-08
DE102013211403B4 (de) 2020-12-17
WO2014202517A2 (de) 2014-12-24

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