JP2016522855A - Ｎ−ビニル−ホモポリマーおよびｎ−ビニルコポリマーからなる群から選択される１種または複数のポリマーを含む化学機械研磨組成物 - Google Patents

Ｎ−ビニル−ホモポリマーおよびｎ−ビニルコポリマーからなる群から選択される１種または複数のポリマーを含む化学機械研磨組成物 Download PDF

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Publication number
JP2016522855A
JP2016522855A JP2016513468A JP2016513468A JP2016522855A JP 2016522855 A JP2016522855 A JP 2016522855A JP 2016513468 A JP2016513468 A JP 2016513468A JP 2016513468 A JP2016513468 A JP 2016513468A JP 2016522855 A JP2016522855 A JP 2016522855A
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JP
Japan
Prior art keywords
cmp
vinyl
chemical mechanical
mechanical polishing
composition
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Pending
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JP2016513468A
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English (en)
Japanese (ja)
Inventor
ラン，ヨンチン
プルジビルスキ，ペーター
パオ，チェンユイ
プレルス，ユリアン
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BASF SE
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BASF SE
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2016513468A 2013-05-15 2014-05-05 Ｎ−ビニル−ホモポリマーおよびｎ−ビニルコポリマーからなる群から選択される１種または複数のポリマーを含む化学機械研磨組成物 Pending JP2016522855A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13167872.4 2013-05-15
EP13167872 2013-05-15
PCT/IB2014/061200 WO2014184702A2 (en) 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019037551A Division JP6810399B2 (ja) 2013-05-15 2019-03-01 Ｎ−ビニル−ホモポリマーおよびｎ−ビニルコポリマーからなる群から選択される１種または複数のポリマーを含む化学機械研磨組成物

Publications (1)

Publication Number Publication Date
JP2016522855A true JP2016522855A (ja) 2016-08-04

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JP2016513468A Pending JP2016522855A (ja) 2013-05-15 2014-05-05 Ｎ−ビニル−ホモポリマーおよびｎ−ビニルコポリマーからなる群から選択される１種または複数のポリマーを含む化学機械研磨組成物
JP2019037551A Active JP6810399B2 (ja) 2013-05-15 2019-03-01 Ｎ−ビニル−ホモポリマーおよびｎ−ビニルコポリマーからなる群から選択される１種または複数のポリマーを含む化学機械研磨組成物

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Country Status (10)

Country Link
US (1) US10090159B2 (ru)
EP (1) EP2997102B1 (ru)
JP (2) JP2016522855A (ru)
KR (1) KR20160009579A (ru)
CN (1) CN105189676B (ru)
MY (1) MY177867A (ru)
RU (1) RU2015153457A (ru)
SG (1) SG11201509225VA (ru)
TW (1) TWI640611B (ru)
WO (1) WO2014184702A2 (ru)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108701616B (zh) * 2016-02-16 2023-04-14 Cmc材料股份有限公司 抛光iii-v族材料的方法
JP6928675B2 (ja) * 2017-05-25 2021-09-01 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティドＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｅｒａｍｉｃｓ Ａｎｄ Ｐｌａｓｔｉｃｓ， Ｉｎｃ． セラミック材料の化学機械研磨のための酸化流体
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
CN112552824B (zh) * 2019-09-26 2023-07-11 福吉米株式会社 研磨用组合物和研磨方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005518091A (ja) * 2002-02-11 2005-06-16 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐのための正電荷高分子電解質で処理したアニオン性研磨粒子
JP2007207785A (ja) * 2006-01-30 2007-08-16 Fujifilm Corp 金属研磨用組成物
JP2008512871A (ja) * 2004-09-08 2008-04-24 プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド メタレート変性シリカ粒子を含有する水性スラリー
JP2008280229A (ja) * 2007-04-13 2008-11-20 Hitachi Chem Co Ltd 表面修飾二酸化ケイ素粒子の製造法及び研磨液
JP2011211178A (ja) * 2010-03-10 2011-10-20 Fujimi Inc 研磨用組成物
WO2011158718A1 (ja) * 2010-06-18 2011-12-22 日立化成工業株式会社 半導体基板用研磨液及び半導体ウエハの製造方法
JP2013043893A (ja) * 2011-08-22 2013-03-04 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60031857T2 (de) * 1999-06-18 2007-09-13 Hitachi Chemical Co., Ltd. Verwendung eines cmp schleifmittels
JP4003116B2 (ja) 2001-11-28 2007-11-07 株式会社フジミインコーポレーテッド 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
JP4776269B2 (ja) 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US8157876B2 (en) 2007-07-31 2012-04-17 Cabot Microelectronics Corporation Slurry composition containing non-ionic polymer and method for use
EP2181123A1 (de) 2007-08-21 2010-05-05 Basf Se Verfahren zur herstellung von vernetzten acrylsäure-polymeren
CA2700408A1 (en) * 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Improved silicon carbide particles, methods of fabrication, and methods using same
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
JP5843613B2 (ja) * 2009-01-20 2016-01-13 キャボット コーポレイションＣａｂｏｔ Ｃｏｒｐｏｒａｔｉｏｎ シラン変性金属酸化物を含む組成物
JP2010269985A (ja) 2009-05-22 2010-12-02 Fuso Chemical Co Ltd スルホン酸修飾水性アニオンシリカゾル及びその製造方法
JP5759904B2 (ja) * 2010-01-29 2015-08-05 株式会社フジミインコーポレーテッド 半導体ウェーハの再生方法及び研磨用組成物
CN102741985B (zh) * 2010-02-01 2015-12-16 Jsr株式会社 化学机械研磨用水系分散体及利用其的化学机械研磨方法
JP5695367B2 (ja) * 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP5732601B2 (ja) * 2012-11-30 2015-06-10 ニッタ・ハース株式会社 研磨組成物
WO2014130935A1 (en) 2013-02-22 2014-08-28 Wertz Zachary R Shaving razor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005518091A (ja) * 2002-02-11 2005-06-16 キャボット マイクロエレクトロニクス コーポレイション Ｃｍｐのための正電荷高分子電解質で処理したアニオン性研磨粒子
JP2008512871A (ja) * 2004-09-08 2008-04-24 プラックセアー エス．ティ．テクノロジー、 インコーポレイテッド メタレート変性シリカ粒子を含有する水性スラリー
JP2007207785A (ja) * 2006-01-30 2007-08-16 Fujifilm Corp 金属研磨用組成物
JP2008280229A (ja) * 2007-04-13 2008-11-20 Hitachi Chem Co Ltd 表面修飾二酸化ケイ素粒子の製造法及び研磨液
JP2011211178A (ja) * 2010-03-10 2011-10-20 Fujimi Inc 研磨用組成物
WO2011158718A1 (ja) * 2010-06-18 2011-12-22 日立化成工業株式会社 半導体基板用研磨液及び半導体ウエハの製造方法
JP2013043893A (ja) * 2011-08-22 2013-03-04 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法

Also Published As

Publication number Publication date
US10090159B2 (en) 2018-10-02
RU2015153457A (ru) 2017-06-20
WO2014184702A2 (en) 2014-11-20
JP2019135297A (ja) 2019-08-15
TWI640611B (zh) 2018-11-11
CN105189676A (zh) 2015-12-23
US20150380263A1 (en) 2015-12-31
EP2997102B1 (en) 2019-07-10
MY177867A (en) 2020-09-23
WO2014184702A3 (en) 2015-03-12
CN105189676B (zh) 2021-03-23
JP6810399B2 (ja) 2021-01-06
TW201504410A (zh) 2015-02-01
EP2997102A4 (en) 2017-01-25
EP2997102A2 (en) 2016-03-23
KR20160009579A (ko) 2016-01-26
SG11201509225VA (en) 2015-12-30

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