SG11201509225VA - Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers - Google Patents

Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers

Info

Publication number
SG11201509225VA
SG11201509225VA SG11201509225VA SG11201509225VA SG11201509225VA SG 11201509225V A SG11201509225V A SG 11201509225VA SG 11201509225V A SG11201509225V A SG 11201509225VA SG 11201509225V A SG11201509225V A SG 11201509225VA SG 11201509225V A SG11201509225V A SG 11201509225VA
Authority
SG
Singapore
Prior art keywords
vinyl
homopolymers
chemical
group
mechanical polishing
Prior art date
Application number
SG11201509225VA
Inventor
Yongqing Lan
Peter Przybylski
Zhenyu Bao
Julian Prölss
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201509225VA publication Critical patent/SG11201509225VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201509225VA 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers SG11201509225VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13167872 2013-05-15
PCT/IB2014/061200 WO2014184702A2 (en) 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers

Publications (1)

Publication Number Publication Date
SG11201509225VA true SG11201509225VA (en) 2015-12-30

Family

ID=48366256

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201509225VA SG11201509225VA (en) 2013-05-15 2014-05-05 Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers

Country Status (10)

Country Link
US (1) US10090159B2 (en)
EP (1) EP2997102B1 (en)
JP (2) JP2016522855A (en)
KR (1) KR20160009579A (en)
CN (1) CN105189676B (en)
MY (1) MY177867A (en)
RU (1) RU2015153457A (en)
SG (1) SG11201509225VA (en)
TW (1) TWI640611B (en)
WO (1) WO2014184702A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6974336B2 (en) * 2016-02-16 2021-12-01 シーエムシー マテリアルズ，インコーポレイティド Polishing method for III-V materials
JP6928675B2 (en) * 2017-05-25 2021-09-01 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティドＳａｉｎｔ−Ｇｏｂａｉｎ Ｃｅｒａｍｉｃｓ Ａｎｄ Ｐｌａｓｔｉｃｓ， Ｉｎｃ． Oxidizing fluid for chemical mechanical polishing of ceramic materials
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
CN112552824B (en) * 2019-09-26 2023-07-11 福吉米株式会社 Polishing composition and polishing method

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1691401B1 (en) * 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Method for polishing a substrate using CMP abrasive
JP4003116B2 (en) 2001-11-28 2007-11-07 株式会社フジミインコーポレーテッド Polishing composition for magnetic disk substrate and polishing method using the same
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
JP4776269B2 (en) 2005-04-28 2011-09-21 株式会社東芝 Metal film CMP slurry and method for manufacturing semiconductor device
JP2007207785A (en) * 2006-01-30 2007-08-16 Fujifilm Corp Composition for metal polishing
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
JP2008192930A (en) * 2007-02-06 2008-08-21 Fujifilm Corp Metal polishing composition and chemical mechanical polishing method using the same
JP2008280229A (en) * 2007-04-13 2008-11-20 Hitachi Chem Co Ltd Manufacturing process of surface-modified silicon dioxide particles and polishing liquid
US8157876B2 (en) * 2007-07-31 2012-04-17 Cabot Microelectronics Corporation Slurry composition containing non-ionic polymer and method for use
CN101784569A (en) 2007-08-21 2010-07-21 巴斯夫欧洲公司 Method for producing cross-linked acrylic acid polymers
KR20100068432A (en) * 2007-10-05 2010-06-23 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 Improved silicon carbide particles, methods of fabrication, and methods using same
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
EP2389417B1 (en) * 2009-01-20 2017-03-15 Cabot Corporation Compositons comprising silane modified metal oxides
JP2010269985A (en) 2009-05-22 2010-12-02 Fuso Chemical Co Ltd Sulfonic acid-modified aqueous anionic silica sol and method for producing the same
EP2530706A4 (en) * 2010-01-29 2015-04-01 Fujimi Inc Method for reclaiming semiconductor wafer and polishing composition
EP2533274B1 (en) 2010-02-01 2014-07-30 JSR Corporation Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same
JP5819076B2 (en) * 2010-03-10 2015-11-18 株式会社フジミインコーポレーテッド Polishing composition
KR20130041084A (en) * 2010-06-18 2013-04-24 히타치가세이가부시끼가이샤 Polishing liquid for semiconductor substrate and method for producing semiconductor wafer
JP5695367B2 (en) * 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド Polishing composition and polishing method using the same
SG190765A1 (en) * 2010-12-24 2013-07-31 Hitachi Chemical Co Ltd Polishing liquid and method for polishing substrate using the polishing liquid
JP5907333B2 (en) * 2011-08-22 2016-04-26 Jsr株式会社 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using the same
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP5732601B2 (en) * 2012-11-30 2015-06-10 ニッタ・ハース株式会社 Polishing composition
WO2014130935A1 (en) 2013-02-22 2014-08-28 Wertz Zachary R Shaving razor

Also Published As

Publication number Publication date
WO2014184702A3 (en) 2015-03-12
JP2016522855A (en) 2016-08-04
WO2014184702A2 (en) 2014-11-20
US10090159B2 (en) 2018-10-02
JP6810399B2 (en) 2021-01-06
EP2997102A2 (en) 2016-03-23
TW201504410A (en) 2015-02-01
JP2019135297A (en) 2019-08-15
RU2015153457A (en) 2017-06-20
CN105189676B (en) 2021-03-23
EP2997102B1 (en) 2019-07-10
US20150380263A1 (en) 2015-12-31
TWI640611B (en) 2018-11-11
EP2997102A4 (en) 2017-01-25
KR20160009579A (en) 2016-01-26
CN105189676A (en) 2015-12-23
MY177867A (en) 2020-09-23

Similar Documents

Publication Publication Date Title
SG11201707505QA (en) Novel siloxane polymer compositions and their use
IL259867B (en) Polyelectrolyte-layer forming block copolymers and compositions and uses thereof
SG10202109688XA (en) Novel lactobacillus having various functions, and use thereof
ZA201702213B (en) Interleukin-15 compositions and uses thereof
IL271275A (en) Compositions comprising curons and uses thereof
SG11201700278UA (en) Poly(oxazoline-co-ethyleneimine)-epichlorohydrin copolymers and uses thereof
ZA201605210B (en) Thermoassociative and exchangeable copolymers, and compositions comprising same
ZA201803875B (en) Interleukin-15 compositions and uses thereof
EP3037479A4 (en) Halogen-free resin composition and use thereof
EP3053963A4 (en) Halogen-free resin composition and use thereof
SG11201605762QA (en) Block copolymer composition and adhesive composition
SG11201605714VA (en) Block copolymer and adhesive composition
HK1257642A1 (en) Cucurbituril compositions and their use
GB201503393D0 (en) Polymers and uses thereof
HK1254237A1 (en) Polymers and microspheres
EP3191549A4 (en) Organosiloxane compositions and uses thereof
GB201502002D0 (en) Uses and compositions
IL240809A0 (en) Chemical-mechanical polishing compositions comprising polyethylene imine
SG11201508192WA (en) Polymer compositions and nonwoven compositions prepared therefrom
EP3436490C0 (en) Semi-crystalline block copolymers and compositions therefrom
EP3196218A4 (en) Block copolymer and resin composition
SG11201509225VA (en) Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of n-vinyl-homopolymers and n-vinyl copolymers
GB201502026D0 (en) Uses and compositions
GB201501991D0 (en) Uses and compositions
SG11201608263PA (en) Branched polyester polymers and soft touch coatings comprising the same