JP2016521667A - 単結晶ガリウム含有窒化物の製法及びその方法によって得られる単結晶ガリウム含有窒化物 - Google Patents

単結晶ガリウム含有窒化物の製法及びその方法によって得られる単結晶ガリウム含有窒化物 Download PDF

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JP2016521667A
JP2016521667A JP2016515680A JP2016515680A JP2016521667A JP 2016521667 A JP2016521667 A JP 2016521667A JP 2016515680 A JP2016515680 A JP 2016515680A JP 2016515680 A JP2016515680 A JP 2016515680A JP 2016521667 A JP2016521667 A JP 2016521667A
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nitride
concentration
gallium
ammonia
single crystal
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JP2016521667A5 (enExample
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ロマン ドラジニスキ
ロマン ドラジニスキ
マルチン ザヤック
マルチン ザヤック
ロベルト クシャルスキー
ロベルト クシャルスキー
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アンモノ ソエテ・アノニム
アンモノ ソエテ・アノニム
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
JP2016515680A 2013-05-30 2014-03-24 単結晶ガリウム含有窒化物の製法及びその方法によって得られる単結晶ガリウム含有窒化物 Ceased JP2016521667A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL404149A PL229568B1 (pl) 2013-05-30 2013-05-30 Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem
PLP.404149 2013-05-30
PCT/EP2014/055876 WO2014191126A1 (en) 2013-05-30 2014-03-24 Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method

Publications (2)

Publication Number Publication Date
JP2016521667A true JP2016521667A (ja) 2016-07-25
JP2016521667A5 JP2016521667A5 (enExample) 2019-02-14

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Country Status (10)

Country Link
US (1) US20160108547A1 (enExample)
EP (1) EP3063315A1 (enExample)
JP (1) JP2016521667A (enExample)
KR (1) KR20160036013A (enExample)
CN (1) CN105556006A (enExample)
CA (1) CA2913720A1 (enExample)
HK (1) HK1224343A1 (enExample)
PL (1) PL229568B1 (enExample)
RU (1) RU2015152554A (enExample)
WO (1) WO2014191126A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL231548B1 (pl) 2014-09-11 2019-03-29 Ammono Spolka Akcyjna Sposób wytwarzania monokrystalicznego azotku zawierającego gal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011016714A (ja) * 2009-06-25 2011-01-27 Ammono Sp Zo O バルク単結晶ガリウム含有窒化物の製造方法及びそれにより得られるバルク単結晶ガリウム含有窒化物基板並びにその基板上に製造されるデバイス．
JP2011230998A (ja) * 2010-03-11 2011-11-17 Soraa Inc 半絶縁性のｉｉｉ族メタルナイトライドおよびその製造方法

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Publication number Priority date Publication date Assignee Title
PL219109B1 (pl) 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL219601B1 (pl) 2002-12-11 2015-06-30 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL221055B1 (pl) 2002-12-11 2016-02-29 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
AU2003299899A1 (en) * 2002-12-27 2004-07-29 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
EP1759408A1 (en) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US20060247623A1 (en) * 2005-04-29 2006-11-02 Sdgi Holdings, Inc. Local delivery of an active agent from an orthopedic implant
PL394857A1 (pl) * 2008-08-07 2011-09-26 Sorra, Inc. Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę
JP5291648B2 (ja) * 2010-03-17 2013-09-18 日本碍子株式会社 窒化物結晶の製造装置及び製造方法
EP2772570A4 (en) * 2011-10-28 2015-03-04 Mitsubishi Chem Corp METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL
WO2014129544A1 (ja) * 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011016714A (ja) * 2009-06-25 2011-01-27 Ammono Sp Zo O バルク単結晶ガリウム含有窒化物の製造方法及びそれにより得られるバルク単結晶ガリウム含有窒化物基板並びにその基板上に製造されるデバイス．
JP2011230998A (ja) * 2010-03-11 2011-11-17 Soraa Inc 半絶縁性のｉｉｉ族メタルナイトライドおよびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
TUOMISTO F. ET AL.: "Vacancy defects in bulk ammonothermal GaN crystals", JOURNAL OF CRYSTAL GROWTH, vol. 312, JPN6018008048, 2010, pages 2620 - 2623, ISSN: 0004039978 *
WANG, BUGUO ET AL.: "Structural and optical properties of GaN crystals grown by the ammonothermal technique", PHYSICA STATUS SOLIDI C., vol. 8, JPN6018008047, 2011, pages 2127 - 2129, ISSN: 0004039977 *

Also Published As

Publication number Publication date
PL404149A1 (pl) 2014-12-08
EP3063315A1 (en) 2016-09-07
PL229568B1 (pl) 2018-07-31
CN105556006A (zh) 2016-05-04
US20160108547A1 (en) 2016-04-21
HK1224343A1 (zh) 2017-08-18
CA2913720A1 (en) 2014-12-04
RU2015152554A (ru) 2017-07-05
WO2014191126A1 (en) 2014-12-04
KR20160036013A (ko) 2016-04-01

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