CA2913720A1 - Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method - Google Patents
Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method Download PDFInfo
- Publication number
- CA2913720A1 CA2913720A1 CA2913720A CA2913720A CA2913720A1 CA 2913720 A1 CA2913720 A1 CA 2913720A1 CA 2913720 A CA2913720 A CA 2913720A CA 2913720 A CA2913720 A CA 2913720A CA 2913720 A1 CA2913720 A1 CA 2913720A1
- Authority
- CA
- Canada
- Prior art keywords
- nitride
- concentration
- gallium
- oxygen
- ammonia
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 88
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 45
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 35
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 173
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 54
- 239000001301 oxygen Substances 0.000 claims abstract description 54
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 31
- 238000004090 dissolution Methods 0.000 claims abstract description 26
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- 238000002425 crystallisation Methods 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 66
- 239000011777 magnesium Substances 0.000 claims description 54
- 239000011701 zinc Substances 0.000 claims description 40
- 239000000370 acceptor Substances 0.000 claims description 38
- 239000011575 calcium Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 239000011734 sodium Substances 0.000 claims description 20
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 16
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052791 calcium Inorganic materials 0.000 claims description 12
- 229910052793 cadmium Inorganic materials 0.000 claims description 11
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000000969 carrier Substances 0.000 claims description 10
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000003574 free electron Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 150000001540 azides Chemical class 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 150000003949 imides Chemical class 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 55
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 32
- 239000007787 solid Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 229910052783 alkali metal Inorganic materials 0.000 description 12
- 150000001340 alkali metals Chemical class 0.000 description 12
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 amidoimides Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL404149A PL229568B1 (pl) | 2013-05-30 | 2013-05-30 | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
| PLP.404149 | 2013-05-30 | ||
| PCT/EP2014/055876 WO2014191126A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2913720A1 true CA2913720A1 (en) | 2014-12-04 |
Family
ID=50543016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2913720A Abandoned CA2913720A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20160108547A1 (enExample) |
| EP (1) | EP3063315A1 (enExample) |
| JP (1) | JP2016521667A (enExample) |
| KR (1) | KR20160036013A (enExample) |
| CN (1) | CN105556006A (enExample) |
| CA (1) | CA2913720A1 (enExample) |
| HK (1) | HK1224343A1 (enExample) |
| PL (1) | PL229568B1 (enExample) |
| RU (1) | RU2015152554A (enExample) |
| WO (1) | WO2014191126A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL231548B1 (pl) | 2014-09-11 | 2019-03-29 | Ammono Spolka Akcyjna | Sposób wytwarzania monokrystalicznego azotku zawierającego gal |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL219109B1 (pl) | 2001-06-06 | 2015-03-31 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| PL219601B1 (pl) | 2002-12-11 | 2015-06-30 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| PL221055B1 (pl) | 2002-12-11 | 2016-02-29 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal |
| TWI334890B (en) | 2002-12-11 | 2010-12-21 | Ammono Sp Zoo | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
| AU2003299899A1 (en) * | 2002-12-27 | 2004-07-29 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| EP1759408A1 (en) | 2004-06-11 | 2007-03-07 | AMMONO Sp.z o.o. | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. |
| US20060247623A1 (en) * | 2005-04-29 | 2006-11-02 | Sdgi Holdings, Inc. | Local delivery of an active agent from an orthopedic implant |
| PL394857A1 (pl) * | 2008-08-07 | 2011-09-26 | Sorra, Inc. | Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| EP2267197A1 (en) | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| JP5291648B2 (ja) * | 2010-03-17 | 2013-09-18 | 日本碍子株式会社 | 窒化物結晶の製造装置及び製造方法 |
| EP2772570A4 (en) * | 2011-10-28 | 2015-03-04 | Mitsubishi Chem Corp | METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL |
| WO2014129544A1 (ja) * | 2013-02-22 | 2014-08-28 | 三菱化学株式会社 | 周期表第１３族金属窒化物結晶およびその製造方法 |
-
2013
- 2013-05-30 PL PL404149A patent/PL229568B1/pl unknown
-
2014
- 2014-03-24 CN CN201480031120.6A patent/CN105556006A/zh active Pending
- 2014-03-24 RU RU2015152554A patent/RU2015152554A/ru not_active Application Discontinuation
- 2014-03-24 CA CA2913720A patent/CA2913720A1/en not_active Abandoned
- 2014-03-24 EP EP14718522.7A patent/EP3063315A1/en not_active Withdrawn
- 2014-03-24 HK HK16112554.5A patent/HK1224343A1/zh unknown
- 2014-03-24 KR KR1020157036340A patent/KR20160036013A/ko not_active Withdrawn
- 2014-03-24 WO PCT/EP2014/055876 patent/WO2014191126A1/en not_active Ceased
- 2014-03-24 JP JP2016515680A patent/JP2016521667A/ja not_active Ceased
- 2014-03-24 US US14/894,337 patent/US20160108547A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| PL404149A1 (pl) | 2014-12-08 |
| EP3063315A1 (en) | 2016-09-07 |
| PL229568B1 (pl) | 2018-07-31 |
| CN105556006A (zh) | 2016-05-04 |
| US20160108547A1 (en) | 2016-04-21 |
| HK1224343A1 (zh) | 2017-08-18 |
| RU2015152554A (ru) | 2017-07-05 |
| WO2014191126A1 (en) | 2014-12-04 |
| KR20160036013A (ko) | 2016-04-01 |
| JP2016521667A (ja) | 2016-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4824313B2 (ja) | ガリウム含有窒化物バルク単結晶を得るためのプロセス、得られた結晶から不純物を排除するためのプロセス、及びガリウム含有窒化物バルク単結晶からなる基板を製造するためのプロセス | |
| US7364619B2 (en) | Process for obtaining of bulk monocrystalline gallium-containing nitride | |
| EP1769105B1 (en) | Bulk mono-crystalline gallium nitride and method for its preparation | |
| EP1442162A2 (en) | Substrate for epitaxy | |
| US7314517B2 (en) | Process for obtaining bulk mono-crystalline gallium-containing nitride | |
| PL224992B1 (pl) | Podłoże typu template dla urządzeń opto-elektrycznych lub elektrycznych oraz sposób jego wytwarzania | |
| AU2002347692A1 (en) | Bulk monocrystalline gallium nitride | |
| IL159165A (en) | Process and device for obtaining a volume of monocrystalline gallium containing nitride | |
| US20170253990A1 (en) | A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method | |
| CA2913720A1 (en) | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method | |
| CN100472000C (zh) | 块状单晶含镓氮化物制造方法 | |
| CN101010453A (zh) | 周期表第13族金属氮化物结晶的制造方法以及使用其的半导体器件的制造方法 | |
| US20090223440A1 (en) | Method of growing GaN crystals from solution | |
| PL225423B1 (pl) | Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal | |
| Feigelson et al. | Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient | |
| KR101286337B1 (ko) | 제 13 족 금속 질화물 결정의 제조 방법, 반도체디바이스의 제조 방법, 및 이들 제조 방법에 사용하는용액과 융액 | |
| HK1241940A1 (en) | A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method | |
| PL225425B1 (pl) | Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |
Effective date: 20200831 |