CN105556006A - 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 - Google Patents

获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 Download PDF

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Publication number
CN105556006A
CN105556006A CN201480031120.6A CN201480031120A CN105556006A CN 105556006 A CN105556006 A CN 105556006A CN 201480031120 A CN201480031120 A CN 201480031120A CN 105556006 A CN105556006 A CN 105556006A
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CN
China
Prior art keywords
nitride
concentration
gallium
oxygen
ammonia
Prior art date
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CN201480031120.6A
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English (en)
Chinese (zh)
Inventor
罗曼·多拉德津斯基
马尔钦·扎亚茨
罗伯特·库哈尔斯基
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Ammono Sp zoo
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Ammono Sp zoo
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Publication of CN105556006A publication Critical patent/CN105556006A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
CN201480031120.6A 2013-05-30 2014-03-24 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 Pending CN105556006A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL404149A PL229568B1 (pl) 2013-05-30 2013-05-30 Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem
PLP.404149 2013-05-30
PCT/EP2014/055876 WO2014191126A1 (en) 2013-05-30 2014-03-24 Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method

Publications (1)

Publication Number Publication Date
CN105556006A true CN105556006A (zh) 2016-05-04

Family

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Family Applications (1)

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CN201480031120.6A Pending CN105556006A (zh) 2013-05-30 2014-03-24 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物

Country Status (10)

Country Link
US (1) US20160108547A1 (enExample)
EP (1) EP3063315A1 (enExample)
JP (1) JP2016521667A (enExample)
KR (1) KR20160036013A (enExample)
CN (1) CN105556006A (enExample)
CA (1) CA2913720A1 (enExample)
HK (1) HK1224343A1 (enExample)
PL (1) PL229568B1 (enExample)
RU (1) RU2015152554A (enExample)
WO (1) WO2014191126A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL231548B1 (pl) 2014-09-11 2019-03-29 Ammono Spolka Akcyjna Sposób wytwarzania monokrystalicznego azotku zawierającego gal

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
WO2010017232A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
CN101988213A (zh) * 2009-06-25 2011-03-23 阿莫诺公司 块状单晶含镓氮化物、其获得方法、其制造的衬底以及在该衬底上制造的器件
CN102191552A (zh) * 2010-03-11 2011-09-21 Soraa有限公司 改善的半绝缘iii族金属氮化物及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL219109B1 (pl) 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL219601B1 (pl) 2002-12-11 2015-06-30 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL221055B1 (pl) 2002-12-11 2016-02-29 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
EP1759408A1 (en) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US20060247623A1 (en) * 2005-04-29 2006-11-02 Sdgi Holdings, Inc. Local delivery of an active agent from an orthopedic implant
JP5291648B2 (ja) * 2010-03-17 2013-09-18 日本碍子株式会社 窒化物結晶の製造装置及び製造方法
EP2772570A4 (en) * 2011-10-28 2015-03-04 Mitsubishi Chem Corp METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL
WO2014129544A1 (ja) * 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
WO2010017232A1 (en) * 2008-08-07 2010-02-11 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
CN101988213A (zh) * 2009-06-25 2011-03-23 阿莫诺公司 块状单晶含镓氮化物、其获得方法、其制造的衬底以及在该衬底上制造的器件
CN102191552A (zh) * 2010-03-11 2011-09-21 Soraa有限公司 改善的半绝缘iii族金属氮化物及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
谭昌龙: "《半导体物理与测试分析》", 31 August 2012 *

Also Published As

Publication number Publication date
PL404149A1 (pl) 2014-12-08
EP3063315A1 (en) 2016-09-07
PL229568B1 (pl) 2018-07-31
US20160108547A1 (en) 2016-04-21
HK1224343A1 (zh) 2017-08-18
CA2913720A1 (en) 2014-12-04
RU2015152554A (ru) 2017-07-05
WO2014191126A1 (en) 2014-12-04
KR20160036013A (ko) 2016-04-01
JP2016521667A (ja) 2016-07-25

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