HK1224343A1 - 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 - Google Patents

获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 Download PDF

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Publication number
HK1224343A1
HK1224343A1 HK16112554.5A HK16112554A HK1224343A1 HK 1224343 A1 HK1224343 A1 HK 1224343A1 HK 16112554 A HK16112554 A HK 16112554A HK 1224343 A1 HK1224343 A1 HK 1224343A1
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HK
Hong Kong
Prior art keywords
nitride
gallium
concentration
oxygen
ammonia
Prior art date
Application number
HK16112554.5A
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English (en)
Chinese (zh)
Inventor
羅曼．朵拉德津斯基
罗曼．多拉德津斯基
馬爾欽．紮亞茨
马尔钦．紮亚茨
羅伯特．庫哈爾斯基
罗伯特．库哈尔斯基
Original Assignee
在破产清算中的阿蒙诺股份公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 在破产清算中的阿蒙诺股份公司 filed Critical 在破产清算中的阿蒙诺股份公司
Publication of HK1224343A1 publication Critical patent/HK1224343A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
HK16112554.5A 2013-05-30 2014-03-24 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物 HK1224343A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL404149A PL229568B1 (pl) 2013-05-30 2013-05-30 Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem
PLP.404149 2013-05-30
PCT/EP2014/055876 WO2014191126A1 (en) 2013-05-30 2014-03-24 Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method

Publications (1)

Publication Number Publication Date
HK1224343A1 true HK1224343A1 (zh) 2017-08-18

Family

ID=50543016

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16112554.5A HK1224343A1 (zh) 2013-05-30 2014-03-24 获得单晶含镓氮化物的方法以及由该方法获得的单晶含镓氮化物

Country Status (10)

Country Link
US (1) US20160108547A1 (enExample)
EP (1) EP3063315A1 (enExample)
JP (1) JP2016521667A (enExample)
KR (1) KR20160036013A (enExample)
CN (1) CN105556006A (enExample)
CA (1) CA2913720A1 (enExample)
HK (1) HK1224343A1 (enExample)
PL (1) PL229568B1 (enExample)
RU (1) RU2015152554A (enExample)
WO (1) WO2014191126A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL231548B1 (pl) 2014-09-11 2019-03-29 Ammono Spolka Akcyjna Sposób wytwarzania monokrystalicznego azotku zawierającego gal

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL219109B1 (pl) 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL219601B1 (pl) 2002-12-11 2015-06-30 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
PL221055B1 (pl) 2002-12-11 2016-02-29 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
AU2003299899A1 (en) * 2002-12-27 2004-07-29 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
EP1759408A1 (en) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
US20060247623A1 (en) * 2005-04-29 2006-11-02 Sdgi Holdings, Inc. Local delivery of an active agent from an orthopedic implant
PL394857A1 (pl) * 2008-08-07 2011-09-26 Sorra, Inc. Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
JP5291648B2 (ja) * 2010-03-17 2013-09-18 日本碍子株式会社 窒化物結晶の製造装置及び製造方法
EP2772570A4 (en) * 2011-10-28 2015-03-04 Mitsubishi Chem Corp METHOD FOR PRODUCING A NITRIDE CRYSTAL AND NITRIDE CRYSTAL
WO2014129544A1 (ja) * 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法

Also Published As

Publication number Publication date
PL404149A1 (pl) 2014-12-08
EP3063315A1 (en) 2016-09-07
PL229568B1 (pl) 2018-07-31
CN105556006A (zh) 2016-05-04
US20160108547A1 (en) 2016-04-21
CA2913720A1 (en) 2014-12-04
RU2015152554A (ru) 2017-07-05
WO2014191126A1 (en) 2014-12-04
KR20160036013A (ko) 2016-04-01
JP2016521667A (ja) 2016-07-25

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