JP2016521667A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016521667A5 JP2016521667A5 JP2016515680A JP2016515680A JP2016521667A5 JP 2016521667 A5 JP2016521667 A5 JP 2016521667A5 JP 2016515680 A JP2016515680 A JP 2016515680A JP 2016515680 A JP2016515680 A JP 2016515680A JP 2016521667 A5 JP2016521667 A5 JP 2016521667A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- concentration
- ammonia
- gallium
- acceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 239000000370 acceptor Substances 0.000 claims 10
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 239000000969 carrier Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000003574 free electron Substances 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 150000001540 azides Chemical class 0.000 claims 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 1
- 150000004678 hydrides Chemical class 0.000 claims 1
- 150000003949 imides Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL404149A PL229568B1 (pl) | 2013-05-30 | 2013-05-30 | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
| PLP.404149 | 2013-05-30 | ||
| PCT/EP2014/055876 WO2014191126A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016521667A JP2016521667A (ja) | 2016-07-25 |
| JP2016521667A5 true JP2016521667A5 (enExample) | 2019-02-14 |
Family
ID=50543016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016515680A Ceased JP2016521667A (ja) | 2013-05-30 | 2014-03-24 | 単結晶ガリウム含有窒化物の製法及びその方法によって得られる単結晶ガリウム含有窒化物 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20160108547A1 (enExample) |
| EP (1) | EP3063315A1 (enExample) |
| JP (1) | JP2016521667A (enExample) |
| KR (1) | KR20160036013A (enExample) |
| CN (1) | CN105556006A (enExample) |
| CA (1) | CA2913720A1 (enExample) |
| HK (1) | HK1224343A1 (enExample) |
| PL (1) | PL229568B1 (enExample) |
| RU (1) | RU2015152554A (enExample) |
| WO (1) | WO2014191126A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL231548B1 (pl) | 2014-09-11 | 2019-03-29 | Ammono Spolka Akcyjna | Sposób wytwarzania monokrystalicznego azotku zawierającego gal |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4116535B2 (ja) | 2001-06-06 | 2008-07-09 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | ガリウム含有窒化物の単結晶の製造法及び装置 |
| TWI334890B (en) | 2002-12-11 | 2010-12-21 | Ammono Sp Zoo | Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride |
| PL221055B1 (pl) | 2002-12-11 | 2016-02-29 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal |
| PL219601B1 (pl) | 2002-12-11 | 2015-06-30 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| WO2004061923A1 (en) * | 2002-12-27 | 2004-07-22 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
| US8754449B2 (en) | 2004-06-11 | 2014-06-17 | Ammono Sp. Z O.O. | High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof |
| US20060247623A1 (en) * | 2005-04-29 | 2006-11-02 | Sdgi Holdings, Inc. | Local delivery of an active agent from an orthopedic implant |
| CN102144052A (zh) * | 2008-08-07 | 2011-08-03 | Soraa有限公司 | 大规模氨热制备氮化镓晶棒的方法 |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| EP2267197A1 (en) | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| JP5291648B2 (ja) * | 2010-03-17 | 2013-09-18 | 日本碍子株式会社 | 窒化物結晶の製造装置及び製造方法 |
| WO2013062042A1 (ja) * | 2011-10-28 | 2013-05-02 | 三菱化学株式会社 | 窒化物結晶の製造方法および窒化物結晶 |
| WO2014129544A1 (ja) * | 2013-02-22 | 2014-08-28 | 三菱化学株式会社 | 周期表第１３族金属窒化物結晶およびその製造方法 |
-
2013
- 2013-05-30 PL PL404149A patent/PL229568B1/pl unknown
-
2014
- 2014-03-24 HK HK16112554.5A patent/HK1224343A1/zh unknown
- 2014-03-24 WO PCT/EP2014/055876 patent/WO2014191126A1/en not_active Ceased
- 2014-03-24 CA CA2913720A patent/CA2913720A1/en not_active Abandoned
- 2014-03-24 EP EP14718522.7A patent/EP3063315A1/en not_active Withdrawn
- 2014-03-24 JP JP2016515680A patent/JP2016521667A/ja not_active Ceased
- 2014-03-24 RU RU2015152554A patent/RU2015152554A/ru not_active Application Discontinuation
- 2014-03-24 CN CN201480031120.6A patent/CN105556006A/zh active Pending
- 2014-03-24 US US14/894,337 patent/US20160108547A1/en not_active Abandoned
- 2014-03-24 KR KR1020157036340A patent/KR20160036013A/ko not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Petrogenesis of ca. 1.95 Ga meta-leucogranites from the Jining Complex in the Khondalite Belt, North China Craton: Water-fluxed melting of metasedimentary rocks | |
| Ashchepkov et al. | Pyroxenites and megacrysts from Vitim picrite-basalts (Russia): Polybaric fractionation of rising melts in the mantle? | |
| Slack et al. | Some crystallography, chemistry, physics, and thermodynamics of B12O2, B12P2, B12As2, and related alpha-boron type crystals | |
| JP2015517451A5 (enExample) | ||
| JPWO2015072136A1 (ja) | ＳｉＣ単結晶の製造方法 | |
| JP2008160077A (ja) | Ｍｇ金属間化合物及びそれを応用したデバイス | |
| CN109056053A (zh) | Ga2O3系单晶基板 | |
| JP2017533172A (ja) | 単結晶ガリウム含有窒化物の製造方法及びこの方法により製造された単結晶ガリウム含有窒化物 | |
| WO2017115466A1 (ja) | 単結晶ＳｉＣの製造方法及び収容容器 | |
| RU2015152554A (ru) | Способ получения монокристаллического галлийсодержащего нитрида и монокристаллический галлийсодержащий нитрид, полученный указанным способом | |
| Tamadon et al. | Reactions of Xenon with Iridiumand Osmiumhexafluoride | |
| Duchesne et al. | Source constraints on the genesis of Danubian granites in the South Carpathians Alpine Belt (Romania) | |
| RU2157020C2 (ru) | СПОСОБ ПОЛУЧЕНИЯ ТЕРМОЭЛЕКТРИЧЕСКИХ МАТЕРИАЛОВ НА ОСНОВЕ ТВЕРДЫХ РАСТВОРОВ Bi2(TeSe)3 ЭЛЕКТРОННОГО ТИПА ПРОВОДИМОСТИ | |
| Chen et al. | Phase diagrams and thermodynamic descriptions for Na–Te and K–Te binary systems | |
| Jeong et al. | Effect of thermal annealing on the characteristics of phosphorus-implanted ZnO crystals | |
| CN103541016B (zh) | 一种用于n型低阻砷化镓单晶生长的掺杂工艺及其设备 | |
| US3652421A (en) | N-type lead telluride | |
| Askarov et al. | Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur | |
| RU2484189C2 (ru) | Способ получения алмазов с полупроводниковыми свойствами | |
| Bagiyeva et al. | Effect of annealing on the electrical properties of Pb1− x Mn x Te single crystals with excess tellurium | |
| Liu et al. | Effects of phosphorus implantation on the activation of magnesium doped in GaN | |
| Jaakko et al. | Comparison of Chemical, Electronic, and Optical Properties of Mg-Doped AlGaN | |
| Sengün et al. | U-Pb Zircon Geochronology of Meta-Gabbros from Meta-Ophiolitic Rocks in the Kazdağ Massif, NW Anatolia | |
| UA19930U (en) | Process for preparation of alloyed cdte:mn of n- and p-type of conductivity | |
| Atuchin | MICROSTRUCTURE AND CHEMICAL COMPOSITION OF CENTAUR CRYSTAL GaSe: AgGaS2 |