JP2016515162A5 - - Google Patents
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- JP2016515162A5 JP2016515162A5 JP2015557187A JP2015557187A JP2016515162A5 JP 2016515162 A5 JP2016515162 A5 JP 2016515162A5 JP 2015557187 A JP2015557187 A JP 2015557187A JP 2015557187 A JP2015557187 A JP 2015557187A JP 2016515162 A5 JP2016515162 A5 JP 2016515162A5
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- 239000002243 precursor Substances 0.000 claims 25
- 239000003990 capacitor Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 17
- 238000000151 deposition Methods 0.000 claims 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 8
- 229910052719 titanium Inorganic materials 0.000 claims 8
- 239000010936 titanium Substances 0.000 claims 8
- 229910052726 zirconium Inorganic materials 0.000 claims 8
- 239000000463 material Substances 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000002904 solvent Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361763001P | 2013-02-11 | 2013-02-11 | |
| US61/763,001 | 2013-02-11 | ||
| US14/169,120 US8962350B2 (en) | 2013-02-11 | 2014-01-30 | Multi-step deposition of ferroelectric dielectric material |
| US14/169,120 | 2014-01-30 | ||
| PCT/US2014/015686 WO2014124413A1 (en) | 2013-02-11 | 2014-02-11 | Multi-step deposition of ferroelectric dielectric material |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020055312A Division JP7015011B2 (ja) | 2013-02-11 | 2020-03-26 | 強誘電性誘電材料の多段階堆積 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016515162A JP2016515162A (ja) | 2016-05-26 |
| JP2016515162A5 true JP2016515162A5 (enExample) | 2017-03-09 |
| JP6719905B2 JP6719905B2 (ja) | 2020-07-08 |
Family
ID=51296930
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015557187A Active JP6719905B2 (ja) | 2013-02-11 | 2014-02-11 | 強誘電性誘電材料の多段階堆積 |
| JP2020055312A Active JP7015011B2 (ja) | 2013-02-11 | 2020-03-26 | 強誘電性誘電材料の多段階堆積 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020055312A Active JP7015011B2 (ja) | 2013-02-11 | 2020-03-26 | 強誘電性誘電材料の多段階堆積 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8962350B2 (enExample) |
| JP (2) | JP6719905B2 (enExample) |
| WO (1) | WO2014124413A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160086960A1 (en) * | 2014-09-22 | 2016-03-24 | Texas Instruments Incorporated | Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance |
| WO2016079801A1 (ja) * | 2014-11-18 | 2016-05-26 | 三菱電機株式会社 | 空気調和装置 |
| DE102018105953B4 (de) | 2017-10-30 | 2023-09-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Halbleiter-bauelement und verfahren zu dessen herstellung |
| WO2019093471A1 (ja) * | 2017-11-13 | 2019-05-16 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
| KR102732061B1 (ko) * | 2019-05-31 | 2024-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들 상에 막들을 형성하기 위한 방법들 및 시스템들 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2790581B2 (ja) * | 1992-02-17 | 1998-08-27 | 三菱電機株式会社 | Ｃｖｄ法による酸化物系誘電体薄膜の製法 |
| US6104049A (en) | 1997-03-03 | 2000-08-15 | Symetrix Corporation | Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same |
| US6316797B1 (en) | 1999-02-19 | 2001-11-13 | Advanced Technology Materials, Inc. | Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material |
| JP3800294B2 (ja) * | 1999-10-25 | 2006-07-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6887716B2 (en) | 2000-12-20 | 2005-05-03 | Fujitsu Limited | Process for producing high quality PZT films for ferroelectric memory integrated circuits |
| JP2002334875A (ja) | 2001-03-09 | 2002-11-22 | Nec Corp | 金属酸化物誘電体膜の気相成長方法 |
| US6730354B2 (en) | 2001-08-08 | 2004-05-04 | Agilent Technologies, Inc. | Forming ferroelectric Pb(Zr,Ti)O3 films |
| US6656748B2 (en) | 2002-01-31 | 2003-12-02 | Texas Instruments Incorporated | FeRAM capacitor post stack etch clean/repair |
| US20040023416A1 (en) * | 2002-08-05 | 2004-02-05 | Gilbert Stephen R. | Method for forming a paraelectric semiconductor device |
| US20040152214A1 (en) | 2003-01-30 | 2004-08-05 | Sanjeev Aggarwal | Method of making a haze free, lead rich PZT film |
| JP2004260024A (ja) * | 2003-02-27 | 2004-09-16 | Japan Pionics Co Ltd | 気相成長方法 |
| US7312091B2 (en) | 2003-07-25 | 2007-12-25 | Samsung Electronics Co., Ltd. | Methods for forming a ferroelectric layer and capacitor and FRAM using the same |
| JP2005105394A (ja) | 2003-10-02 | 2005-04-21 | Hitachi Cable Ltd | 強誘電体薄膜の形成方法 |
| US20070122947A1 (en) * | 2003-12-25 | 2007-05-31 | Adeka Corporation | Metal compound, material for thin film formation, and process of forming thin film |
| EP1742269B1 (en) | 2004-04-28 | 2016-07-20 | Fujitsu Limited | Semiconductor device and production method therefor |
| JP4943920B2 (ja) | 2007-04-06 | 2012-05-30 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
| JP5093236B2 (ja) * | 2007-06-14 | 2012-12-12 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および半導体装置 |
| JP5211558B2 (ja) | 2007-06-18 | 2013-06-12 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR101227446B1 (ko) * | 2007-07-31 | 2013-01-29 | 삼성전자주식회사 | 강유전체막의 형성 방법 및 이를 이용한 강유전체커패시터의 제조 방법 |
| JP2009158539A (ja) | 2007-12-25 | 2009-07-16 | Fujitsu Ltd | 半導体装置の製造方法 |
| US20130056811A1 (en) | 2011-09-01 | 2013-03-07 | Texas Instruments Incorporated | Hydrogen-Blocking Film for Ferroelectric Capacitors |
-
2014
- 2014-01-30 US US14/169,120 patent/US8962350B2/en active Active
- 2014-02-11 JP JP2015557187A patent/JP6719905B2/ja active Active
- 2014-02-11 WO PCT/US2014/015686 patent/WO2014124413A1/en not_active Ceased
-
2020
- 2020-03-26 JP JP2020055312A patent/JP7015011B2/ja active Active