JP6719905B2 - 強誘電性誘電材料の多段階堆積 - Google Patents

強誘電性誘電材料の多段階堆積 Download PDF

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JP6719905B2
JP6719905B2 JP2015557187A JP2015557187A JP6719905B2 JP 6719905 B2 JP6719905 B2 JP 6719905B2 JP 2015557187 A JP2015557187 A JP 2015557187A JP 2015557187 A JP2015557187 A JP 2015557187A JP 6719905 B2 JP6719905 B2 JP 6719905B2
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pzt
deposition
precursor
ferroelectric
flow rate
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JP2016515162A (ja
JP2016515162A5 (enExample
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スリニヴァサン バスカール
スリニヴァサン バスカール
イー グドリン ブライアン
イー グドリン ブライアン
ブー ハオウェン
ブー ハオウェン
ヴィソケイ マーク
ヴィソケイ マーク
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H10P14/68—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H10P14/6328—
    • H10P14/662—
    • H10P14/69398—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2015557187A 2013-02-11 2014-02-11 強誘電性誘電材料の多段階堆積 Active JP6719905B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361763001P 2013-02-11 2013-02-11
US61/763,001 2013-02-11
US14/169,120 US8962350B2 (en) 2013-02-11 2014-01-30 Multi-step deposition of ferroelectric dielectric material
US14/169,120 2014-01-30
PCT/US2014/015686 WO2014124413A1 (en) 2013-02-11 2014-02-11 Multi-step deposition of ferroelectric dielectric material

Related Child Applications (1)

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JP2020055312A Division JP7015011B2 (ja) 2013-02-11 2020-03-26 強誘電性誘電材料の多段階堆積

Publications (3)

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JP2016515162A JP2016515162A (ja) 2016-05-26
JP2016515162A5 JP2016515162A5 (enExample) 2017-03-09
JP6719905B2 true JP6719905B2 (ja) 2020-07-08

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JP2015557187A Active JP6719905B2 (ja) 2013-02-11 2014-02-11 強誘電性誘電材料の多段階堆積
JP2020055312A Active JP7015011B2 (ja) 2013-02-11 2020-03-26 強誘電性誘電材料の多段階堆積

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US (1) US8962350B2 (enExample)
JP (2) JP6719905B2 (enExample)
WO (1) WO2014124413A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160086960A1 (en) * 2014-09-22 2016-03-24 Texas Instruments Incorporated Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
WO2016079801A1 (ja) * 2014-11-18 2016-05-26 三菱電機株式会社 空気調和装置
DE102018105953B4 (de) 2017-10-30 2023-09-21 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement und verfahren zu dessen herstellung
EP3712974A4 (en) * 2017-11-13 2021-09-22 Advanced Material Technologies, Inc. FILM STRUCTURE AND ITS PRODUCTION PROCESS
US11505863B2 (en) * 2019-05-31 2022-11-22 Applied Materials, Inc. Methods for forming films on substrates

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2790581B2 (ja) * 1992-02-17 1998-08-27 三菱電機株式会社 Ｃｖｄ法による酸化物系誘電体薄膜の製法
US6104049A (en) 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
US6316797B1 (en) 1999-02-19 2001-11-13 Advanced Technology Materials, Inc. Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
JP3800294B2 (ja) * 1999-10-25 2006-07-26 日本電気株式会社 半導体装置およびその製造方法
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
JP2002334875A (ja) * 2001-03-09 2002-11-22 Nec Corp 金属酸化物誘電体膜の気相成長方法
US6730354B2 (en) 2001-08-08 2004-05-04 Agilent Technologies, Inc. Forming ferroelectric Pb(Zr,Ti)O3 films
US6656748B2 (en) 2002-01-31 2003-12-02 Texas Instruments Incorporated FeRAM capacitor post stack etch clean/repair
US20040023416A1 (en) * 2002-08-05 2004-02-05 Gilbert Stephen R. Method for forming a paraelectric semiconductor device
US20040152214A1 (en) * 2003-01-30 2004-08-05 Sanjeev Aggarwal Method of making a haze free, lead rich PZT film
JP2004260024A (ja) * 2003-02-27 2004-09-16 Japan Pionics Co Ltd 気相成長方法
US7312091B2 (en) 2003-07-25 2007-12-25 Samsung Electronics Co., Ltd. Methods for forming a ferroelectric layer and capacitor and FRAM using the same
JP2005105394A (ja) * 2003-10-02 2005-04-21 Hitachi Cable Ltd 強誘電体薄膜の形成方法
KR101138130B1 (ko) * 2003-12-25 2012-04-23 가부시키가이샤 아데카 금속화합물, 박막 형성용 원료 및 박막의 제조방법
EP1742269B1 (en) * 2004-04-28 2016-07-20 Fujitsu Limited Semiconductor device and production method therefor
JP4943920B2 (ja) * 2007-04-06 2012-05-30 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法
CN101681883B (zh) * 2007-06-14 2011-07-06 富士通半导体股份有限公司 半导体装置的制造方法以及半导体装置
JP5211558B2 (ja) * 2007-06-18 2013-06-12 富士通セミコンダクター株式会社 半導体装置の製造方法
KR101227446B1 (ko) * 2007-07-31 2013-01-29 삼성전자주식회사 강유전체막의 형성 방법 및 이를 이용한 강유전체커패시터의 제조 방법
JP2009158539A (ja) * 2007-12-25 2009-07-16 Fujitsu Ltd 半導体装置の製造方法
US20130056811A1 (en) 2011-09-01 2013-03-07 Texas Instruments Incorporated Hydrogen-Blocking Film for Ferroelectric Capacitors

Also Published As

Publication number Publication date
JP7015011B2 (ja) 2022-02-02
US8962350B2 (en) 2015-02-24
JP2020123729A (ja) 2020-08-13
JP2016515162A (ja) 2016-05-26
US20140225226A1 (en) 2014-08-14
WO2014124413A1 (en) 2014-08-14

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