JP6719905B2 - 強誘電性誘電材料の多段階堆積 - Google Patents

強誘電性誘電材料の多段階堆積 Download PDF

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JP6719905B2
JP6719905B2 JP2015557187A JP2015557187A JP6719905B2 JP 6719905 B2 JP6719905 B2 JP 6719905B2 JP 2015557187 A JP2015557187 A JP 2015557187A JP 2015557187 A JP2015557187 A JP 2015557187A JP 6719905 B2 JP6719905 B2 JP 6719905B2
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pzt
deposition
precursor
ferroelectric
flow rate
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JP2016515162A5 (enExample
JP2016515162A (ja
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スリニヴァサン バスカール
スリニヴァサン バスカール
イー グドリン ブライアン
イー グドリン ブライアン
ブー ハオウェン
ブー ハオウェン
ヴィソケイ マーク
ヴィソケイ マーク
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015557187A 2013-02-11 2014-02-11 強誘電性誘電材料の多段階堆積 Active JP6719905B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361763001P 2013-02-11 2013-02-11
US61/763,001 2013-02-11
US14/169,120 US8962350B2 (en) 2013-02-11 2014-01-30 Multi-step deposition of ferroelectric dielectric material
US14/169,120 2014-01-30
PCT/US2014/015686 WO2014124413A1 (en) 2013-02-11 2014-02-11 Multi-step deposition of ferroelectric dielectric material

Related Child Applications (1)

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JP2016515162A JP2016515162A (ja) 2016-05-26
JP2016515162A5 JP2016515162A5 (enExample) 2017-03-09
JP6719905B2 true JP6719905B2 (ja) 2020-07-08

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JP2020055312A Active JP7015011B2 (ja) 2013-02-11 2020-03-26 強誘電性誘電材料の多段階堆積

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WO (1) WO2014124413A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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US20160086960A1 (en) * 2014-09-22 2016-03-24 Texas Instruments Incorporated Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
WO2016079801A1 (ja) * 2014-11-18 2016-05-26 三菱電機株式会社 空気調和装置
DE102018105953B4 (de) 2017-10-30 2023-09-21 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement und verfahren zu dessen herstellung
WO2019093471A1 (ja) * 2017-11-13 2019-05-16 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
KR102732061B1 (ko) * 2019-05-31 2024-11-18 어플라이드 머티어리얼스, 인코포레이티드 기판들 상에 막들을 형성하기 위한 방법들 및 시스템들

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US6104049A (en) 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
US6316797B1 (en) 1999-02-19 2001-11-13 Advanced Technology Materials, Inc. Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
JP3800294B2 (ja) * 1999-10-25 2006-07-26 日本電気株式会社 半導体装置およびその製造方法
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
JP2002334875A (ja) 2001-03-09 2002-11-22 Nec Corp 金属酸化物誘電体膜の気相成長方法
US6730354B2 (en) 2001-08-08 2004-05-04 Agilent Technologies, Inc. Forming ferroelectric Pb(Zr,Ti)O3 films
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JP2004260024A (ja) * 2003-02-27 2004-09-16 Japan Pionics Co Ltd 気相成長方法
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JP2005105394A (ja) 2003-10-02 2005-04-21 Hitachi Cable Ltd 強誘電体薄膜の形成方法
US20070122947A1 (en) * 2003-12-25 2007-05-31 Adeka Corporation Metal compound, material for thin film formation, and process of forming thin film
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JP4943920B2 (ja) 2007-04-06 2012-05-30 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法
JP5093236B2 (ja) * 2007-06-14 2012-12-12 富士通セミコンダクター株式会社 半導体装置の製造方法および半導体装置
JP5211558B2 (ja) 2007-06-18 2013-06-12 富士通セミコンダクター株式会社 半導体装置の製造方法
KR101227446B1 (ko) * 2007-07-31 2013-01-29 삼성전자주식회사 강유전체막의 형성 방법 및 이를 이용한 강유전체커패시터의 제조 방법
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Publication number Publication date
JP7015011B2 (ja) 2022-02-02
JP2016515162A (ja) 2016-05-26
JP2020123729A (ja) 2020-08-13
US20140225226A1 (en) 2014-08-14
US8962350B2 (en) 2015-02-24
WO2014124413A1 (en) 2014-08-14

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