JP2020123729A - 強誘電性誘電材料の多段階堆積 - Google Patents
強誘電性誘電材料の多段階堆積 Download PDFInfo
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Abstract
Description
Claims (16)
- 強誘電性キャパシタを含む集積回路を製造する方法であって、
ボディの半導体表面付近に第1の導電膜を堆積するステップ、
有機金属化学気相成長によって前記第1の導電膜の上に強誘電性材料を堆積するステップであって、
第1の持続時間、鉛とジルコニウムとチタニウムとの前駆体、及び溶剤を第1の集合的流速で、及び酸化ガスを、前記ボディを含むチャンバ内に導入することと、
その後第2の持続時間、鉛とジルコニウムとチタニウムとの前記前駆体、及び溶剤を、前記第1の集合的流速より速い第2の集合的流速で、及び酸化ガスを、前記チャンバ内に導入することと、
を含む、前記堆積するステップ、
前記強誘電性材料に重なる第2の導電膜を堆積するステップ、及び、
前記強誘電性キャパシタを画定するように、選択された位置で、前記第1及び第2の導電膜及び前記強誘電性材料の一部を除去するステップ、
を含む、方法。 - 請求項1に記載の方法であって、
前記第1の集合的流速が約1.1ml/分であるか又はそれを下回る、方法。 - 請求項2に記載の方法であって、
前記第2の集合的流速が約1.1ml/分を上回る、方法。 - 請求項3に記載の方法であって、
前記第2の集合的流速が約1.5ml/分から約2.5ml/分までの範囲である、方法。 - 請求項1に記載の方法であって、
前記第1の持続時間の前駆体の導入が、ジルコニウム前駆体及びチタニウム前駆体の合計に対する鉛前駆体の第1のフロー比で行われ、
前記第2の持続時間の前駆体の導入が、前記第1のフロー比より高い、前記ジルコニウム及びチタニウム前駆体の合計に対する前記鉛前駆体の第2のフロー比で行われる、方法。 - 請求項1に記載の方法であって、
前記第1の持続時間導入される前記酸化ガスが、第1の濃度の酸素を含み、
前記第2の持続時間導入される前記酸化ガスが、前記第1の濃度より高い第2の濃度の酸素を含む、方法。 - 請求項1に記載の方法であって、
前記第1の持続時間前駆体を導入することに先立ち、前記ボディを含む前記チャンバを約640℃を下回るサセプタ温度まで加熱することを更に含む、方法。 - 請求項7に記載の方法であって、
前記第1の持続時間前駆体を前記導入することの後、前記チャンバにおける前記温度を、約640℃を上回るサセプタ温度まで上昇させることを更に含む、方法。 - 集積回路における強誘電性キャパシタであって、
ボディの半導体表面付近に第1の導電膜を堆積すること、
有機金属化学気相成長によって前記第1の導電膜の上に強誘電性材料の第1の部分層を堆積することであって、
第1の持続時間、鉛とジルコニウムとチタニウムとの前駆体、及び溶剤を、第1の集合的流速で前記ボディを含むチャンバ内に導入することを含む、前記第1の部分層を前記堆積すること、
有機金属化学気相成長によって前記第1の部分層の上に強誘電性材料の第2の部分層を堆積することであって、
第2の持続時間、鉛とジルコニウムとチタニウムとの前記前駆体、及び溶剤を、前記第1の集合的流速より速い第2の集合的流速で前記チャンバ内に導入することを含む、前記第2の部分層を前記堆積すること、
前記強誘電性材料に重なる第2の導電膜を堆積すること、及び、
前記強誘電性キャパシタを画定するように、選択された位置で、前記第1及び第2の導電膜及び前記強誘電性材料の一部を除去すること、
を含むプロセスによって形成される、強誘電性キャパシタ。 - 請求項9に記載のキャパシタであって、
前記第1の集合的流速が約1.1ml/分であるか又はそれを下回る、キャパシタ。 - 請求項10に記載のキャパシタであって、
前記第2の集合的流速が約1.1ml/分を上回る、キャパシタ。 - 請求項11に記載のキャパシタであって、
前記第2の集合的流速が約1.5ml/分から約2.5ml/分までの範囲である、キャパシタ。 - 請求項9に記載のキャパシタであって、
前記第1の部分層を前記堆積することが、前記第1の持続時間、ジルコニウム前駆体及びチタニウム前駆体の合計に対する鉛前駆体の第1のフロー比で前駆体を導入し、
前記第2の部分層を前記堆積することが、前記第2の持続時間、前記第1のフロー比より高い、前記ジルコニウム及びチタニウム前駆体の合計に対する前記鉛前駆体の第2のフロー比で前駆体を導入する、キャパシタ。 - 請求項9に記載のキャパシタであって、
前記プロセスが、
前記第1の持続時間前駆体を前記導入する間、第1の濃度の酸素を含む酸化ガスを前記チャンバ内に導入すること、及び、
前記第2の持続時間前駆体を前記導入する間、前記第1の濃度より高い第2の濃度の酸素を含む酸化ガスを前記チャンバ内に導入すること、
を更に含む、キャパシタ。 - 請求項9に記載のキャパシタであって、
前記第1の部分層を前記堆積することが、前記第1の持続時間前駆体を導入することに先立ち、前記ボディを含む前記チャンバを、約640℃を下回るサセプタ温度まで加熱することを更に含む、キャパシタ。 - 請求項15に記載のキャパシタであって、
前記第2の部分層を前記堆積することが、前記チャンバにおける前記温度を、約640℃を上回るサセプタ温度まで上昇させることを更に含む、キャパシタ。
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WO2016079801A1 (ja) * | 2014-11-18 | 2016-05-26 | 三菱電機株式会社 | 空気調和装置 |
DE102018105953B4 (de) | 2017-10-30 | 2023-09-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Halbleiter-bauelement und verfahren zu dessen herstellung |
WO2019093471A1 (ja) * | 2017-11-13 | 2019-05-16 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
KR20210155812A (ko) * | 2019-05-31 | 2021-12-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들 상에 막들을 형성하기 위한 방법들 및 시스템들 |
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