JP2016500449A5 - - Google Patents

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Publication number
JP2016500449A5
JP2016500449A5 JP2015546004A JP2015546004A JP2016500449A5 JP 2016500449 A5 JP2016500449 A5 JP 2016500449A5 JP 2015546004 A JP2015546004 A JP 2015546004A JP 2015546004 A JP2015546004 A JP 2015546004A JP 2016500449 A5 JP2016500449 A5 JP 2016500449A5
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JP
Japan
Prior art keywords
capping layer
thickness
optical element
manufacturing
reflective optical
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Application number
JP2015546004A
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English (en)
Japanese (ja)
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JP6309535B2 (ja
JP2016500449A (ja
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Priority claimed from DE102012222466.1A external-priority patent/DE102012222466A1/de
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Publication of JP2016500449A publication Critical patent/JP2016500449A/ja
Publication of JP2016500449A5 publication Critical patent/JP2016500449A5/ja
Application granted granted Critical
Publication of JP6309535B2 publication Critical patent/JP6309535B2/ja
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JP2015546004A 2012-12-06 2013-12-05 Euvリソグラフィー用反射性光学素子及びその製造方法 Active JP6309535B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261734183P 2012-12-06 2012-12-06
DE102012222466.1A DE102012222466A1 (de) 2012-12-06 2012-12-06 Reflektives optisches Element für die EUV-Lithographie
US61/734,183 2012-12-06
DE102012222466.1 2012-12-06
PCT/EP2013/075620 WO2014086905A1 (en) 2012-12-06 2013-12-05 Reflective optical element for euv lithography and method of manufacturing a reflective optical element

Publications (3)

Publication Number Publication Date
JP2016500449A JP2016500449A (ja) 2016-01-12
JP2016500449A5 true JP2016500449A5 (enExample) 2017-01-19
JP6309535B2 JP6309535B2 (ja) 2018-04-18

Family

ID=50778061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015546004A Active JP6309535B2 (ja) 2012-12-06 2013-12-05 Euvリソグラフィー用反射性光学素子及びその製造方法

Country Status (6)

Country Link
US (1) US9606446B2 (enExample)
EP (1) EP2929398B9 (enExample)
JP (1) JP6309535B2 (enExample)
KR (1) KR102127230B1 (enExample)
DE (1) DE102012222466A1 (enExample)
WO (1) WO2014086905A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016212373A1 (de) * 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
JP2021071543A (ja) 2019-10-29 2021-05-06 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
DE102020203286A1 (de) * 2020-03-13 2021-09-16 3D Global Holding Gmbh Lentikularlinsen-Baugruppe zum Anbringen an einer Anzeigefläche
KR102882943B1 (ko) * 2022-04-01 2025-11-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW561279B (en) * 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
EP1291680A2 (en) * 2001-08-27 2003-03-12 Nikon Corporation Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations
DE10209493B4 (de) * 2002-03-07 2007-03-22 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung
DE10309084A1 (de) * 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
JP4521753B2 (ja) * 2003-03-19 2010-08-11 Hoya株式会社 反射型マスクの製造方法及び半導体装置の製造方法
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
JP5194547B2 (ja) * 2007-04-26 2013-05-08 凸版印刷株式会社 極端紫外線露光用マスク及びマスクブランク
JP5269079B2 (ja) * 2007-08-20 2013-08-21 カール・ツァイス・エスエムティー・ゲーエムベーハー 反射コーティングを備えたミラー要素を有する投影対物系
ATE512389T1 (de) * 2007-10-23 2011-06-15 Imec Erkennung von kontaminationen in euv-systemen
TW201131615A (en) * 2009-12-09 2011-09-16 Asahi Glass Co Ltd Multilayer mirror for euv lithography and process for producing same
EP2511943A4 (en) * 2009-12-09 2015-09-09 Asahi Glass Co Ltd OPTICAL ELEMENT FOR USE IN EUV LITHOGRAPHY
DE102009054986B4 (de) * 2009-12-18 2015-11-12 Carl Zeiss Smt Gmbh Reflektive Maske für die EUV-Lithographie
CN103229248B (zh) 2010-09-27 2016-10-12 卡尔蔡司Smt有限责任公司 反射镜,包含这种反射镜的投射物镜,以及包含这种投射物镜的用于微光刻的投射曝光设备
DE102010041502A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Spiegel, Projektionsobjektiv mit einem solchen Spiegel und Projektionsbelichtungs-anlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
DE102011076011A1 (de) * 2011-05-18 2012-11-22 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System für die EUV-Lithographie
DE102012222451A1 (de) 2012-12-06 2014-06-26 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie

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