JP6309535B2 - Ｅｕｖリソグラフィー用反射性光学素子及びその製造方法 - Google Patents

Ｅｕｖリソグラフィー用反射性光学素子及びその製造方法 Download PDF

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JP6309535B2
JP6309535B2 JP2015546004A JP2015546004A JP6309535B2 JP 6309535 B2 JP6309535 B2 JP 6309535B2 JP 2015546004 A JP2015546004 A JP 2015546004A JP 2015546004 A JP2015546004 A JP 2015546004A JP 6309535 B2 JP6309535 B2 JP 6309535B2
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capping layer
optical element
reflective optical
phase
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JP2016500449A (ja
JP2016500449A5 (enExample
Inventor
ワブラ ノルベルト
ワブラ ノルベルト
ビトナー ボリス
ビトナー ボリス
フォン ホーデンベルク マルティン
フォン ホーデンベルク マルティン
エンキッシュ ハルトムット
エンキッシュ ハルトムット
ミューレンダー シュテファン
ミューレンダー シュテファン
コンラディ オラフ
コンラディ オラフ
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
    • G02B27/102—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources
    • G02B27/1026—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources for use with reflective spatial light modulators
    • G02B27/1033—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources for use with reflective spatial light modulators having a single light modulator for all colour channels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2015546004A 2012-12-06 2013-12-05 Ｅｕｖリソグラフィー用反射性光学素子及びその製造方法 Active JP6309535B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261734183P 2012-12-06 2012-12-06
US61/734,183 2012-12-06
DE102012222466.1A DE102012222466A1 (de) 2012-12-06 2012-12-06 Reflektives optisches Element für die EUV-Lithographie
DE102012222466.1 2012-12-06
PCT/EP2013/075620 WO2014086905A1 (en) 2012-12-06 2013-12-05 Reflective optical element for euv lithography and method of manufacturing a reflective optical element

Publications (3)

Publication Number Publication Date
JP2016500449A JP2016500449A (ja) 2016-01-12
JP2016500449A5 JP2016500449A5 (enExample) 2017-01-19
JP6309535B2 true JP6309535B2 (ja) 2018-04-18

Family

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JP2015546004A Active JP6309535B2 (ja) 2012-12-06 2013-12-05 Ｅｕｖリソグラフィー用反射性光学素子及びその製造方法

Country Status (6)

Country Link
US (1) US9606446B2 (enExample)
EP (1) EP2929398B9 (enExample)
JP (1) JP6309535B2 (enExample)
KR (1) KR102127230B1 (enExample)
DE (1) DE102012222466A1 (enExample)
WO (1) WO2014086905A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016212373A1 (de) * 2016-07-07 2018-01-11 Carl Zeiss Smt Gmbh Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US10468149B2 (en) * 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
JP2021071543A (ja) 2019-10-29 2021-05-06 ギガフォトン株式会社 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法
DE102020203286A1 (de) * 2020-03-13 2021-09-16 3D Global Holding Gmbh Lentikularlinsen-Baugruppe zum Anbringen an einer Anzeigefläche
KR20250153884A (ko) * 2022-04-01 2025-10-27 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW561279B (en) * 1999-07-02 2003-11-11 Asml Netherlands Bv Reflector for reflecting radiation in a desired wavelength range, lithographic projection apparatus containing the same and method for their preparation
US20030081722A1 (en) * 2001-08-27 2003-05-01 Nikon Corporation Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations
DE10209493B4 (de) * 2002-03-07 2007-03-22 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung
DE10309084A1 (de) * 2003-03-03 2004-09-16 Carl Zeiss Smt Ag Reflektives optisches Element und EUV-Lithographiegerät
JP4521753B2 (ja) * 2003-03-19 2010-08-11 Ｈｏｙａ株式会社 反射型マスクの製造方法及び半導体装置の製造方法
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
JP5194547B2 (ja) * 2007-04-26 2013-05-08 凸版印刷株式会社 極端紫外線露光用マスク及びマスクブランク
JP5269079B2 (ja) * 2007-08-20 2013-08-21 カール・ツァイス・エスエムティー・ゲーエムベーハー 反射コーティングを備えたミラー要素を有する投影対物系
ATE512389T1 (de) * 2007-10-23 2011-06-15 Imec Erkennung von kontaminationen in euv-systemen
JP5590044B2 (ja) * 2009-12-09 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用光学部材
EP2511945A4 (en) * 2009-12-09 2014-09-03 Asahi Glass Co Ltd MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF
DE102009054986B4 (de) * 2009-12-18 2015-11-12 Carl Zeiss Smt Gmbh Reflektive Maske für die EUV-Lithographie
DE102010041502A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Spiegel, Projektionsobjektiv mit einem solchen Spiegel und Projektionsbelichtungs-anlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2012041697A1 (en) 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
DE102011076011A1 (de) * 2011-05-18 2012-11-22 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System für die EUV-Lithographie
DE102012222451A1 (de) 2012-12-06 2014-06-26 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie

Also Published As

Publication number Publication date
KR102127230B1 (ko) 2020-07-07
WO2014086905A1 (en) 2014-06-12
EP2929398B1 (en) 2016-11-23
JP2016500449A (ja) 2016-01-12
US20150316851A1 (en) 2015-11-05
KR20150092240A (ko) 2015-08-12
EP2929398A1 (en) 2015-10-14
EP2929398B9 (en) 2017-03-22
DE102012222466A1 (de) 2014-06-12
US9606446B2 (en) 2017-03-28

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