KR102127230B1 - Euv 리소그래피용 반사 광학 소자 및 반사 광학 소자의 제조 방법 - Google Patents
Euv 리소그래피용 반사 광학 소자 및 반사 광학 소자의 제조 방법 Download PDFInfo
- Publication number
- KR102127230B1 KR102127230B1 KR1020157017603A KR20157017603A KR102127230B1 KR 102127230 B1 KR102127230 B1 KR 102127230B1 KR 1020157017603 A KR1020157017603 A KR 1020157017603A KR 20157017603 A KR20157017603 A KR 20157017603A KR 102127230 B1 KR102127230 B1 KR 102127230B1
- Authority
- KR
- South Korea
- Prior art keywords
- thickness
- capping layer
- optical element
- reflective optical
- capping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000003287 optical effect Effects 0.000 title claims abstract description 130
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000002310 reflectometry Methods 0.000 claims description 24
- 230000004075 alteration Effects 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000001419 dependent effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 185
- 239000006096 absorbing agent Substances 0.000 description 13
- 238000012937 correction Methods 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 210000001747 pupil Anatomy 0.000 description 9
- 238000005286 illumination Methods 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 4
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- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 238000001393 microlithography Methods 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
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- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
- G02B27/102—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources
- G02B27/1026—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources for use with reflective spatial light modulators
- G02B27/1033—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources for use with reflective spatial light modulators having a single light modulator for all colour channels
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Lenses (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261734183P | 2012-12-06 | 2012-12-06 | |
| DE102012222466.1A DE102012222466A1 (de) | 2012-12-06 | 2012-12-06 | Reflektives optisches Element für die EUV-Lithographie |
| DE102012222466.1 | 2012-12-06 | ||
| US61/734,183 | 2012-12-06 | ||
| PCT/EP2013/075620 WO2014086905A1 (en) | 2012-12-06 | 2013-12-05 | Reflective optical element for euv lithography and method of manufacturing a reflective optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150092240A KR20150092240A (ko) | 2015-08-12 |
| KR102127230B1 true KR102127230B1 (ko) | 2020-07-07 |
Family
ID=50778061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157017603A Active KR102127230B1 (ko) | 2012-12-06 | 2013-12-05 | Euv 리소그래피용 반사 광학 소자 및 반사 광학 소자의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9606446B2 (enExample) |
| EP (1) | EP2929398B9 (enExample) |
| JP (1) | JP6309535B2 (enExample) |
| KR (1) | KR102127230B1 (enExample) |
| DE (1) | DE102012222466A1 (enExample) |
| WO (1) | WO2014086905A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016212373A1 (de) * | 2016-07-07 | 2018-01-11 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| US10468149B2 (en) * | 2017-02-03 | 2019-11-05 | Globalfoundries Inc. | Extreme ultraviolet mirrors and masks with improved reflectivity |
| JP2021071543A (ja) | 2019-10-29 | 2021-05-06 | ギガフォトン株式会社 | 極端紫外光集光ミラー、極端紫外光生成装置、及び電子デバイスの製造方法 |
| DE102020203286A1 (de) * | 2020-03-13 | 2021-09-16 | 3D Global Holding Gmbh | Lentikularlinsen-Baugruppe zum Anbringen an einer Anzeigefläche |
| KR102685023B1 (ko) * | 2022-04-01 | 2024-07-16 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1291680A2 (en) | 2001-08-27 | 2003-03-12 | Nikon Corporation | Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations |
| JP2008277398A (ja) | 2007-04-26 | 2008-11-13 | Toppan Printing Co Ltd | 極端紫外線露光用マスク及びマスクブランク |
| US20100195075A1 (en) | 2007-08-20 | 2010-08-05 | Carl Zeiss Smt Ag | Projection objective having mirror elements with reflective coatings |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI267704B (en) * | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
| DE10209493B4 (de) * | 2002-03-07 | 2007-03-22 | Carl Zeiss Smt Ag | Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung |
| DE10309084A1 (de) * | 2003-03-03 | 2004-09-16 | Carl Zeiss Smt Ag | Reflektives optisches Element und EUV-Lithographiegerät |
| JP4521753B2 (ja) * | 2003-03-19 | 2010-08-11 | Hoya株式会社 | 反射型マスクの製造方法及び半導体装置の製造方法 |
| EP1930771A1 (en) | 2006-12-04 | 2008-06-11 | Carl Zeiss SMT AG | Projection objectives having mirror elements with reflective coatings |
| EP2053463B1 (en) * | 2007-10-23 | 2011-06-08 | Imec | Detection of contamination in EUV systems |
| WO2011071126A1 (ja) * | 2009-12-09 | 2011-06-16 | 旭硝子株式会社 | Euvリソグラフィ用多層膜ミラーおよびその製造方法 |
| JP5590044B2 (ja) * | 2009-12-09 | 2014-09-17 | 旭硝子株式会社 | Euvリソグラフィ用光学部材 |
| DE102009054986B4 (de) * | 2009-12-18 | 2015-11-12 | Carl Zeiss Smt Gmbh | Reflektive Maske für die EUV-Lithographie |
| DE102010041502A1 (de) * | 2010-09-28 | 2012-03-29 | Carl Zeiss Smt Gmbh | Spiegel, Projektionsobjektiv mit einem solchen Spiegel und Projektionsbelichtungs-anlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| JP5926264B2 (ja) | 2010-09-27 | 2016-05-25 | カール・ツァイス・エスエムティー・ゲーエムベーハー | ミラー、当該ミラーを備える投影対物レンズ、及び当該投影対物レンズを備えるマイクロリソグラフィ用投影露光装置 |
| DE102011076011A1 (de) * | 2011-05-18 | 2012-11-22 | Carl Zeiss Smt Gmbh | Reflektives optisches Element und optisches System für die EUV-Lithographie |
| DE102012222451A1 (de) | 2012-12-06 | 2014-06-26 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für die EUV-Lithographie |
-
2012
- 2012-12-06 DE DE102012222466.1A patent/DE102012222466A1/de not_active Ceased
-
2013
- 2013-12-05 JP JP2015546004A patent/JP6309535B2/ja active Active
- 2013-12-05 WO PCT/EP2013/075620 patent/WO2014086905A1/en not_active Ceased
- 2013-12-05 EP EP13811826.0A patent/EP2929398B9/en not_active Not-in-force
- 2013-12-05 KR KR1020157017603A patent/KR102127230B1/ko active Active
-
2015
- 2015-06-05 US US14/732,248 patent/US9606446B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1291680A2 (en) | 2001-08-27 | 2003-03-12 | Nikon Corporation | Multilayer-film mirrors for use in extreme UV optical systems, and methods for manufacturing such mirrors exhibiting improved wave aberrations |
| JP2008277398A (ja) | 2007-04-26 | 2008-11-13 | Toppan Printing Co Ltd | 極端紫外線露光用マスク及びマスクブランク |
| US20100195075A1 (en) | 2007-08-20 | 2010-08-05 | Carl Zeiss Smt Ag | Projection objective having mirror elements with reflective coatings |
| JP2010537413A (ja) | 2007-08-20 | 2010-12-02 | カール・ツァイス・エスエムティー・アーゲー | 反射コーティングを備えたミラー要素を有する投影対物系 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2929398B1 (en) | 2016-11-23 |
| WO2014086905A1 (en) | 2014-06-12 |
| US9606446B2 (en) | 2017-03-28 |
| US20150316851A1 (en) | 2015-11-05 |
| DE102012222466A1 (de) | 2014-06-12 |
| JP2016500449A (ja) | 2016-01-12 |
| JP6309535B2 (ja) | 2018-04-18 |
| EP2929398B9 (en) | 2017-03-22 |
| EP2929398A1 (en) | 2015-10-14 |
| KR20150092240A (ko) | 2015-08-12 |
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