JP2016197702A - 加工装置 - Google Patents
加工装置 Download PDFInfo
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- JP2016197702A JP2016197702A JP2015078032A JP2015078032A JP2016197702A JP 2016197702 A JP2016197702 A JP 2016197702A JP 2015078032 A JP2015078032 A JP 2015078032A JP 2015078032 A JP2015078032 A JP 2015078032A JP 2016197702 A JP2016197702 A JP 2016197702A
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- 238000003384 imaging method Methods 0.000 claims abstract description 96
- 238000003860 storage Methods 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims description 40
- 238000005286 illumination Methods 0.000 claims description 7
- 230000011218 segmentation Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000007246 mechanism Effects 0.000 description 16
- 238000003754 machining Methods 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 244000309466 calf Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/024—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with the stock carried by a movable support for feeding stock into engagement with the cutting blade, e.g. stock carried by a pivoted arm or a carriage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67715—Changing the direction of the conveying path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
Abstract
【解決手段】加工装置(2)であって、チャックテーブル(14)と、加工手段(18)と、チャックテーブルと加工手段とをX軸方向に相対的に移動させるX軸移動手段と、チャックテーブルと加工手段とをX軸方向に直交するY軸方向に相対的に移動させるY軸移動手段(22)と、撮像手段(44)と、撮像手段で分割予定ライン(13)を撮像する際の分割予定ラインの特性に応じた撮像位置及び撮像条件並びに分割予定ラインを撮像して得られる画像を処理する際の画像処理条件を設定するための設定入力手段(50)と、分割予定ラインの位置、分割予定ラインに設定した撮像位置及び撮像条件並びに画像処理条件を記憶する記憶手段(48a)と、を備え、分割予定ラインに形成された加工痕(21)を分割予定ラインに対応した撮像位置及び撮像条件で撮像し、得られる画像を画像処理条件で処理する。
【選択図】図1
Description
4 基台
4a,4b,4c 開口
6 カセット支持台
8 カセット
10 X軸移動テーブル
12 防塵防滴カバー
14 チャックテーブル
14a 保持面
16 クランプ
18 切削ユニット(加工手段)
20 支持構造
22 切削ユニット移動機構(Y軸移動手段)
24 Y軸ガイドレール
26 Y軸移動プレート
28 Y軸ボールネジ
30 Y軸パルスモータ
32 Z軸ガイドレール
34 Z軸移動プレート
36 Z軸ボールネジ
38 Z軸パルスモータ
40 切削ブレード
44 カメラ(撮像手段)
46 洗浄機構
48 制御装置
48a 記憶部(記憶手段)
50 入力装置(設定入力手段)
52 筐体
54 顕微鏡ユニット
56 斜光照明ユニット
58 ハーフミラー
60,66 光源(照明手段)
62 対物レンズ
64 撮像素子
11 被加工物
11a 表面
11b 裏面
13,13a,13b,13c 分割予定ライン(ストリート)
15 デバイス
15a 配線
17 ダイシングテープ
19 フレーム
21 加工溝(加工痕)
L1,L2 光
A,B,C,D1,D2,E1,E2,F1,F2 領域
Claims (3)
- 被加工物を複数の分割予定ラインに沿って加工する加工装置であって、
被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物を加工する加工手段と、該チャックテーブルと該加工手段とをX軸方向に相対的に移動させるX軸移動手段と、該チャックテーブルと該加工手段とを該X軸方向に直交するY軸方向に相対的に移動させるY軸移動手段と、該チャックテーブルに保持された被加工物を撮像する撮像手段と、該撮像手段で該分割予定ラインを撮像する際の該分割予定ラインの特性に応じた撮像位置及び撮像条件並びに該分割予定ラインを撮像して得られる画像を処理する際の画像処理条件を設定するための設定入力手段と、該分割予定ラインの位置、該分割予定ラインに設定した該撮像位置及び該撮像条件並びに該画像処理条件を記憶する記憶手段と、を備え、
該チャックテーブルに保持された被加工物の該分割予定ラインを該撮像手段で検出するアライメントを実行し、該加工手段で被加工物を該分割予定ラインに沿って加工した後に、該分割予定ラインに形成された加工痕を該分割予定ラインに対応した該撮像位置及び該撮像条件で撮像し、得られる画像を該画像処理条件で処理することを特徴とする加工装置。 - 前記加工手段は、回転可能な切削ブレードを備えた切削手段であり、被加工物を切削加工することを特徴とする請求項1記載の加工装置。
- 前記撮像手段は、照明手段を備え、
前記撮像条件は、該照明手段の光量条件を含むことを特徴とする請求項1又は請求項2記載の加工装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078032A JP6465722B2 (ja) | 2015-04-06 | 2015-04-06 | 加工装置 |
TW105105449A TWI671836B (zh) | 2015-04-06 | 2016-02-24 | 加工裝置 |
CN201610161201.9A CN106042199B (zh) | 2015-04-06 | 2016-03-21 | 加工装置 |
KR1020160038414A KR102409604B1 (ko) | 2015-04-06 | 2016-03-30 | 가공 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078032A JP6465722B2 (ja) | 2015-04-06 | 2015-04-06 | 加工装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016197702A true JP2016197702A (ja) | 2016-11-24 |
JP6465722B2 JP6465722B2 (ja) | 2019-02-06 |
Family
ID=57157267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015078032A Active JP6465722B2 (ja) | 2015-04-06 | 2015-04-06 | 加工装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6465722B2 (ja) |
KR (1) | KR102409604B1 (ja) |
CN (1) | CN106042199B (ja) |
TW (1) | TWI671836B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017117924A (ja) * | 2015-12-24 | 2017-06-29 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019500754A (ja) * | 2015-12-30 | 2019-01-10 | ルドルフ・テクノロジーズ,インコーポレーテッド | ウエハシンギュレーションプロセス制御 |
JP2019025583A (ja) * | 2017-07-28 | 2019-02-21 | 株式会社ディスコ | 切削方法 |
JP2019046923A (ja) * | 2017-08-31 | 2019-03-22 | 株式会社ディスコ | ウエーハの加工方法 |
JP2019054187A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019054186A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021133430A (ja) * | 2020-02-21 | 2021-09-13 | 株式会社ディスコ | 被加工物の撮像方法、及び、加工装置 |
KR20220069815A (ko) | 2020-11-20 | 2022-05-27 | 가부시기가이샤 디스코 | 가공 장치 |
KR20230153253A (ko) | 2022-04-28 | 2023-11-06 | 가부시기가이샤 디스코 | 피가공물의 검사 방법, 및 검사 장치, 가공 방법, 가공 장치 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110023016B (zh) * | 2016-10-10 | 2021-07-02 | 伊利诺斯工具制品有限公司 | 样品制备锯 |
JP6879747B2 (ja) * | 2017-01-16 | 2021-06-02 | 株式会社ディスコ | チャックテーブルの詰まり検出方法及び加工装置 |
JP6912267B2 (ja) * | 2017-05-09 | 2021-08-04 | 株式会社ディスコ | レーザ加工方法 |
JP6994852B2 (ja) * | 2017-06-30 | 2022-01-14 | 株式会社ディスコ | レーザー加工装置及びレーザー加工方法 |
JP7028607B2 (ja) * | 2017-11-06 | 2022-03-02 | 株式会社ディスコ | 切削装置 |
JP7017949B2 (ja) * | 2018-03-02 | 2022-02-09 | 株式会社ディスコ | 加工装置 |
JP7022624B2 (ja) * | 2018-03-13 | 2022-02-18 | 株式会社ディスコ | 位置付け方法 |
JP7321643B2 (ja) * | 2019-05-21 | 2023-08-07 | 株式会社ディスコ | 被加工物の分割方法、チップの寸法検出方法及び切削装置 |
JP7325913B2 (ja) * | 2019-11-22 | 2023-08-15 | 株式会社ディスコ | ウェーハ加工装置 |
JP7222941B2 (ja) * | 2020-02-10 | 2023-02-15 | Towa株式会社 | 加工装置 |
CN113427143A (zh) * | 2021-05-10 | 2021-09-24 | 深圳市仁创艺电子有限公司 | 用于热电分离金属基板加工的裁切装置及方法 |
CN116394135B (zh) * | 2023-06-08 | 2023-08-25 | 沈阳和研科技股份有限公司 | 划片机接触测高方法 |
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2015
- 2015-04-06 JP JP2015078032A patent/JP6465722B2/ja active Active
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2016
- 2016-02-24 TW TW105105449A patent/TWI671836B/zh active
- 2016-03-21 CN CN201610161201.9A patent/CN106042199B/zh active Active
- 2016-03-30 KR KR1020160038414A patent/KR102409604B1/ko active IP Right Grant
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017117924A (ja) * | 2015-12-24 | 2017-06-29 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019500754A (ja) * | 2015-12-30 | 2019-01-10 | ルドルフ・テクノロジーズ,インコーポレーテッド | ウエハシンギュレーションプロセス制御 |
JP2019025583A (ja) * | 2017-07-28 | 2019-02-21 | 株式会社ディスコ | 切削方法 |
JP2019046923A (ja) * | 2017-08-31 | 2019-03-22 | 株式会社ディスコ | ウエーハの加工方法 |
JP2019054187A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019054186A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社ディスコ | ウェーハの加工方法 |
JP7118522B2 (ja) | 2017-09-19 | 2022-08-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP7118521B2 (ja) | 2017-09-19 | 2022-08-16 | 株式会社ディスコ | ウェーハの加工方法 |
JP2021133430A (ja) * | 2020-02-21 | 2021-09-13 | 株式会社ディスコ | 被加工物の撮像方法、及び、加工装置 |
KR20220069815A (ko) | 2020-11-20 | 2022-05-27 | 가부시기가이샤 디스코 | 가공 장치 |
KR20230153253A (ko) | 2022-04-28 | 2023-11-06 | 가부시기가이샤 디스코 | 피가공물의 검사 방법, 및 검사 장치, 가공 방법, 가공 장치 |
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TW201639054A (zh) | 2016-11-01 |
CN106042199B (zh) | 2019-09-06 |
JP6465722B2 (ja) | 2019-02-06 |
KR20160119694A (ko) | 2016-10-14 |
KR102409604B1 (ko) | 2022-06-17 |
CN106042199A (zh) | 2016-10-26 |
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