JP2019054186A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP2019054186A JP2019054186A JP2017178722A JP2017178722A JP2019054186A JP 2019054186 A JP2019054186 A JP 2019054186A JP 2017178722 A JP2017178722 A JP 2017178722A JP 2017178722 A JP2017178722 A JP 2017178722A JP 2019054186 A JP2019054186 A JP 2019054186A
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- Prior art keywords
- wafer
- sealing material
- alignment
- csp
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 239000003566 sealing material Substances 0.000 claims abstract description 39
- 238000005520 cutting process Methods 0.000 claims abstract description 24
- 238000003384 imaging method Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000006229 carbon black Substances 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 71
- 239000002184 metal Substances 0.000 description 12
- 238000002507 cathodic stripping potentiometry Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
13 分割予定ライン
15 デバイス
18 切削ユニット
21 金属ポスト
23 封止材
24 切削ブレード
25 バンプ
26 可視光撮像手段
27 WL-CSPウェーハ
28 斜光手段
29 デバイスチップ(CSP)
Claims (1)
- 表面に交差して形成された複数の分割予定ラインによって区画されたチップ領域にそれぞれデバイスが形成されたデバイスウェーハの表面が封止材で封止され、該封止材の該チップ領域にそれぞれ複数のバンプが形成されたウェーハの加工方法であって、
該ウェーハの表面側から可視光撮像手段によって該封止材を透過してデバイスウェーハのアライメントマークを検出し、該アライメントマークに基づいて切削すべき該分割予定ラインを検出するアライメント工程と、
該アライメント工程を実施した後、該ウェーハの表面側から該分割予定ラインに沿って切削ブレードによって該ウェーハを切削し、該封止材によって表面が封止された個々のデバイスチップに分割する分割工程と、を備え、
該アライメント工程は、該可視光撮像手段によって撮像する領域に斜光手段によって斜めから光を照射しながら実施することを特徴とするウェーハの加工方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178722A JP7118521B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
KR1020180104751A KR102569622B1 (ko) | 2017-09-19 | 2018-09-03 | 웨이퍼의 가공 방법 |
SG10201807860WA SG10201807860WA (en) | 2017-09-19 | 2018-09-12 | Processing method for wafer |
CN201811067513.9A CN109524351A (zh) | 2017-09-19 | 2018-09-13 | 晶片的加工方法 |
TW107132559A TWI798264B (zh) | 2017-09-19 | 2018-09-14 | 晶圓加工方法 |
DE102018215819.3A DE102018215819A1 (de) | 2017-09-19 | 2018-09-18 | Bearbeitungsverfahren für einen wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017178722A JP7118521B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019054186A true JP2019054186A (ja) | 2019-04-04 |
JP7118521B2 JP7118521B2 (ja) | 2022-08-16 |
Family
ID=65526647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017178722A Active JP7118521B2 (ja) | 2017-09-19 | 2017-09-19 | ウェーハの加工方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7118521B2 (ja) |
KR (1) | KR102569622B1 (ja) |
CN (1) | CN109524351A (ja) |
DE (1) | DE102018215819A1 (ja) |
SG (1) | SG10201807860WA (ja) |
TW (1) | TWI798264B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7366637B2 (ja) * | 2019-08-16 | 2023-10-23 | 株式会社ディスコ | ワークの確認方法、及び、加工方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003327666A (ja) * | 2002-05-16 | 2003-11-19 | Kyocera Chemical Corp | エポキシ樹脂組成物および半導体封止装置 |
JP2006052279A (ja) * | 2004-08-11 | 2006-02-23 | Tokai Carbon Co Ltd | 半導体封止材用カーボンブラック着色剤およびその製造方法 |
JP2014003274A (ja) * | 2012-05-25 | 2014-01-09 | Nitto Denko Corp | 半導体装置の製造方法及びアンダーフィル材 |
JP2015023078A (ja) * | 2013-07-17 | 2015-02-02 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015028980A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016197702A (ja) * | 2015-04-06 | 2016-11-24 | 株式会社ディスコ | 加工装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0756877B2 (ja) * | 1990-01-24 | 1995-06-14 | 三菱電機株式会社 | 半導体装置のリード平坦性測定装置 |
US6649445B1 (en) * | 2002-09-11 | 2003-11-18 | Motorola, Inc. | Wafer coating and singulation method |
JP2004200258A (ja) | 2002-12-17 | 2004-07-15 | Shinko Electric Ind Co Ltd | バンプ検査装置および検査方法 |
JP4464693B2 (ja) * | 2004-01-20 | 2010-05-19 | 東海カーボン株式会社 | 半導体封止材用カーボンブラック着色剤およびその製造方法 |
JP2009158763A (ja) * | 2007-12-27 | 2009-07-16 | Disco Abrasive Syst Ltd | 保護膜被覆装置 |
JP5895332B2 (ja) | 2010-04-01 | 2016-03-30 | 株式会社ニコン | 位置検出装置、重ね合わせ装置、位置検出方法およびデバイスの製造方法 |
JP5948034B2 (ja) | 2011-09-27 | 2016-07-06 | 株式会社ディスコ | アライメント方法 |
JP2016015438A (ja) | 2014-07-03 | 2016-01-28 | 株式会社ディスコ | アライメント方法 |
JP6557081B2 (ja) * | 2015-07-13 | 2019-08-07 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017028160A (ja) * | 2015-07-24 | 2017-02-02 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017054888A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP6608694B2 (ja) * | 2015-12-25 | 2019-11-20 | 株式会社ディスコ | ウエーハの加工方法 |
-
2017
- 2017-09-19 JP JP2017178722A patent/JP7118521B2/ja active Active
-
2018
- 2018-09-03 KR KR1020180104751A patent/KR102569622B1/ko active IP Right Grant
- 2018-09-12 SG SG10201807860WA patent/SG10201807860WA/en unknown
- 2018-09-13 CN CN201811067513.9A patent/CN109524351A/zh active Pending
- 2018-09-14 TW TW107132559A patent/TWI798264B/zh active
- 2018-09-18 DE DE102018215819.3A patent/DE102018215819A1/de active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003327666A (ja) * | 2002-05-16 | 2003-11-19 | Kyocera Chemical Corp | エポキシ樹脂組成物および半導体封止装置 |
JP2006052279A (ja) * | 2004-08-11 | 2006-02-23 | Tokai Carbon Co Ltd | 半導体封止材用カーボンブラック着色剤およびその製造方法 |
JP2014003274A (ja) * | 2012-05-25 | 2014-01-09 | Nitto Denko Corp | 半導体装置の製造方法及びアンダーフィル材 |
JP2015023078A (ja) * | 2013-07-17 | 2015-02-02 | 株式会社ディスコ | ウエーハの加工方法 |
JP2015028980A (ja) * | 2013-07-30 | 2015-02-12 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016197702A (ja) * | 2015-04-06 | 2016-11-24 | 株式会社ディスコ | 加工装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201916241A (zh) | 2019-04-16 |
KR102569622B1 (ko) | 2023-08-22 |
CN109524351A (zh) | 2019-03-26 |
JP7118521B2 (ja) | 2022-08-16 |
KR20190032191A (ko) | 2019-03-27 |
DE102018215819A1 (de) | 2019-03-21 |
TWI798264B (zh) | 2023-04-11 |
SG10201807860WA (en) | 2019-04-29 |
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