JP2016187004A - ウェーハの加工方法 - Google Patents

ウェーハの加工方法 Download PDF

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Publication number
JP2016187004A
JP2016187004A JP2015066741A JP2015066741A JP2016187004A JP 2016187004 A JP2016187004 A JP 2016187004A JP 2015066741 A JP2015066741 A JP 2015066741A JP 2015066741 A JP2015066741 A JP 2015066741A JP 2016187004 A JP2016187004 A JP 2016187004A
Authority
JP
Japan
Prior art keywords
wafer
protective film
region
reinforcing portion
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015066741A
Other languages
English (en)
Japanese (ja)
Inventor
鈴木　克彦
Katsuhiko Suzuki
克彦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2015066741A priority Critical patent/JP2016187004A/ja
Priority to TW105103778A priority patent/TW201705251A/zh
Priority to CN201610139919.8A priority patent/CN106024602A/zh
Priority to KR1020160031415A priority patent/KR20160115728A/ko
Priority to DE102016204523.7A priority patent/DE102016204523A1/de
Publication of JP2016187004A publication Critical patent/JP2016187004A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
JP2015066741A 2015-03-27 2015-03-27 ウェーハの加工方法 Pending JP2016187004A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2015066741A JP2016187004A (ja) 2015-03-27 2015-03-27 ウェーハの加工方法
TW105103778A TW201705251A (zh) 2015-03-27 2016-02-04 晶圓的加工方法
CN201610139919.8A CN106024602A (zh) 2015-03-27 2016-03-11 晶片的加工方法
KR1020160031415A KR20160115728A (ko) 2015-03-27 2016-03-16 웨이퍼의 가공 방법
DE102016204523.7A DE102016204523A1 (de) 2015-03-27 2016-03-18 Bearbeitungsverfahren für Wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015066741A JP2016187004A (ja) 2015-03-27 2015-03-27 ウェーハの加工方法

Publications (1)

Publication Number Publication Date
JP2016187004A true JP2016187004A (ja) 2016-10-27

Family

ID=56889791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015066741A Pending JP2016187004A (ja) 2015-03-27 2015-03-27 ウェーハの加工方法

Country Status (5)

Country Link
JP (1) JP2016187004A (de)
KR (1) KR20160115728A (de)
CN (1) CN106024602A (de)
DE (1) DE102016204523A1 (de)
TW (1) TW201705251A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022244794A1 (ja) * 2021-05-21 2022-11-24 ローム株式会社 半導体ウエハの加工方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024039868A1 (en) * 2022-08-19 2024-02-22 Lumileds Llc Open-ended holder device for removing sapphire substrate

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053341A (ja) * 2006-08-23 2008-03-06 Disco Abrasive Syst Ltd ウエーハの加工方法
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP2009158763A (ja) * 2007-12-27 2009-07-16 Disco Abrasive Syst Ltd 保護膜被覆装置
JP2009170510A (ja) * 2008-01-11 2009-07-30 Disco Abrasive Syst Ltd 積層デバイスの製造方法
JP2010022990A (ja) * 2008-07-24 2010-02-04 Disco Abrasive Syst Ltd 保護膜形成装置およびレーザー加工機
JP2010073897A (ja) * 2008-09-18 2010-04-02 Lintec Corp レーザーダイシングシートおよび半導体チップの製造方法
JP2013051271A (ja) * 2011-08-30 2013-03-14 Disco Abrasive Syst Ltd 保護膜形成装置およびレーザー加工機
JP2013081947A (ja) * 2011-10-06 2013-05-09 Disco Corp 半導体基板のアブレーション加工方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5390740B2 (ja) 2005-04-27 2014-01-15 株式会社ディスコ ウェーハの加工方法
JP5133855B2 (ja) * 2008-11-25 2013-01-30 株式会社ディスコ 保護膜の被覆方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053341A (ja) * 2006-08-23 2008-03-06 Disco Abrasive Syst Ltd ウエーハの加工方法
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP2009158763A (ja) * 2007-12-27 2009-07-16 Disco Abrasive Syst Ltd 保護膜被覆装置
JP2009170510A (ja) * 2008-01-11 2009-07-30 Disco Abrasive Syst Ltd 積層デバイスの製造方法
JP2010022990A (ja) * 2008-07-24 2010-02-04 Disco Abrasive Syst Ltd 保護膜形成装置およびレーザー加工機
JP2010073897A (ja) * 2008-09-18 2010-04-02 Lintec Corp レーザーダイシングシートおよび半導体チップの製造方法
JP2013051271A (ja) * 2011-08-30 2013-03-14 Disco Abrasive Syst Ltd 保護膜形成装置およびレーザー加工機
JP2013081947A (ja) * 2011-10-06 2013-05-09 Disco Corp 半導体基板のアブレーション加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022244794A1 (ja) * 2021-05-21 2022-11-24 ローム株式会社 半導体ウエハの加工方法

Also Published As

Publication number Publication date
KR20160115728A (ko) 2016-10-06
CN106024602A (zh) 2016-10-12
TW201705251A (zh) 2017-02-01
DE102016204523A1 (de) 2016-09-29

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