TW201705251A - 晶圓的加工方法 - Google Patents
晶圓的加工方法 Download PDFInfo
- Publication number
- TW201705251A TW201705251A TW105103778A TW105103778A TW201705251A TW 201705251 A TW201705251 A TW 201705251A TW 105103778 A TW105103778 A TW 105103778A TW 105103778 A TW105103778 A TW 105103778A TW 201705251 A TW201705251 A TW 201705251A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- processing
- protective film
- region
- reinforcing portion
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 75
- 239000007888 film coating Substances 0.000 claims abstract description 24
- 238000009501 film coating Methods 0.000 claims abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 230000003014 reinforcing effect Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 abstract description 8
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 134
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000004575 stone Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015066741A JP2016187004A (ja) | 2015-03-27 | 2015-03-27 | ウェーハの加工方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201705251A true TW201705251A (zh) | 2017-02-01 |
Family
ID=56889791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105103778A TW201705251A (zh) | 2015-03-27 | 2016-02-04 | 晶圓的加工方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2016187004A (de) |
| KR (1) | KR20160115728A (de) |
| CN (1) | CN106024602A (de) |
| DE (1) | DE102016204523A1 (de) |
| TW (1) | TW201705251A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112022002246T5 (de) * | 2021-05-21 | 2024-02-22 | Rohm Co., Ltd. | Verfahren zur Bearbeitung von Halbleiter-Wafern |
| WO2024039868A1 (en) * | 2022-08-19 | 2024-02-22 | Lumileds Llc | Open-ended holder device for removing sapphire substrate |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5390740B2 (ja) | 2005-04-27 | 2014-01-15 | 株式会社ディスコ | ウェーハの加工方法 |
| JP5065637B2 (ja) * | 2006-08-23 | 2012-11-07 | 株式会社ディスコ | ウエーハの加工方法 |
| US20080242052A1 (en) * | 2007-03-30 | 2008-10-02 | Tao Feng | Method of forming ultra thin chips of power devices |
| JP2009158763A (ja) * | 2007-12-27 | 2009-07-16 | Disco Abrasive Syst Ltd | 保護膜被覆装置 |
| JP5296386B2 (ja) * | 2008-01-11 | 2013-09-25 | 株式会社ディスコ | 積層デバイスの製造方法 |
| JP2010022990A (ja) * | 2008-07-24 | 2010-02-04 | Disco Abrasive Syst Ltd | 保護膜形成装置およびレーザー加工機 |
| JP5124778B2 (ja) * | 2008-09-18 | 2013-01-23 | リンテック株式会社 | レーザーダイシングシートおよび半導体チップの製造方法 |
| JP5133855B2 (ja) * | 2008-11-25 | 2013-01-30 | 株式会社ディスコ | 保護膜の被覆方法 |
| JP5851768B2 (ja) * | 2011-08-30 | 2016-02-03 | 株式会社ディスコ | 保護膜形成装置およびレーザー加工機 |
| JP2013081947A (ja) * | 2011-10-06 | 2013-05-09 | Disco Corp | 半導体基板のアブレーション加工方法 |
-
2015
- 2015-03-27 JP JP2015066741A patent/JP2016187004A/ja active Pending
-
2016
- 2016-02-04 TW TW105103778A patent/TW201705251A/zh unknown
- 2016-03-11 CN CN201610139919.8A patent/CN106024602A/zh active Pending
- 2016-03-16 KR KR1020160031415A patent/KR20160115728A/ko unknown
- 2016-03-18 DE DE102016204523.7A patent/DE102016204523A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016187004A (ja) | 2016-10-27 |
| KR20160115728A (ko) | 2016-10-06 |
| CN106024602A (zh) | 2016-10-12 |
| DE102016204523A1 (de) | 2016-09-29 |
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