JP2020093330A - 被加工物の加工方法 - Google Patents
被加工物の加工方法 Download PDFInfo
- Publication number
- JP2020093330A JP2020093330A JP2018231760A JP2018231760A JP2020093330A JP 2020093330 A JP2020093330 A JP 2020093330A JP 2018231760 A JP2018231760 A JP 2018231760A JP 2018231760 A JP2018231760 A JP 2018231760A JP 2020093330 A JP2020093330 A JP 2020093330A
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- JP
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- workpiece
- porous portion
- processing
- chuck table
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims abstract description 5
- 239000012530 fluid Substances 0.000 claims abstract description 49
- 239000002699 waste material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005192 partition Methods 0.000 claims abstract description 12
- 238000000638 solvent extraction Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000003754 machining Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 8
- 238000005498 polishing Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Threshing Machine Elements (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Abstract
Description
11a 表面
11b 裏面
13 分割予定ライン(ストリート)
15 デバイス
17 保護部材(保護テープ)
2 加工装置
4 チャックテーブル
6 枠体(本体部)
6a 上面
6b 凹部
8 第1のポーラス部
8a 保持面
10 第2のポーラス部
10a 保持面
12 仕切り部
14 バルブ
16 バルブ
18 バルブ
20 吸引源
22a,22b バルブ
24 流体供給源
24a 水供給源
24b エアー供給源
30 加工ユニット(研削ユニット)
32 スピンドル
34 マウント
36 研削ホイール
38 ホイール基台
40 研削砥石
50 加工屑
52 流体
Claims (2)
- 被加工物を加工する加工ユニットと、
該被加工物を保持する保持面を備える第1のポーラス部と、該被加工物を保持する保持面を備え該第1のポーラス部を囲繞する第2のポーラス部と、該第1のポーラス部と該第2のポーラス部とを仕切る仕切り部と、該第2のポーラス部を囲繞する枠体と、を備えるチャックテーブルと、
を有する加工装置によって該被加工物を加工する被加工物の加工方法であって、
該第1のポーラス部の保持面の全体を覆うように該被加工物を該チャックテーブル上に配置し、該第1のポーラス部の保持面及び該第2のポーラス部の保持面に負圧を作用させることにより、該被加工物を該チャックテーブルによって吸引保持する保持ステップと、
該チャックテーブルによって保持された該被加工物を該加工ユニットによって加工する加工ステップと、
該第1のポーラス部から流体を噴出させ、且つ、該第2のポーラス部から該流体を噴出させずに、該チャックテーブルから該被加工物を取り外す取り外しステップと、を備えることを特徴とする被加工物の加工方法。 - 該取り外しステップ後に、該第2のポーラス部から該流体を噴出させることによって該第2のポーラス部に吸引された加工屑を該第2のポーラス部から噴出させる噴出ステップを更に備えることを特徴とする請求項1記載の被加工物の加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231760A JP7251899B2 (ja) | 2018-12-11 | 2018-12-11 | 被加工物の加工方法 |
KR1020190151131A KR20200071660A (ko) | 2018-12-11 | 2019-11-22 | 피가공물의 가공 방법 |
CN201911248258.2A CN111312615B (zh) | 2018-12-11 | 2019-12-09 | 被加工物的加工方法 |
TW108144932A TWI808283B (zh) | 2018-12-11 | 2019-12-09 | 被加工物的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231760A JP7251899B2 (ja) | 2018-12-11 | 2018-12-11 | 被加工物の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020093330A true JP2020093330A (ja) | 2020-06-18 |
JP7251899B2 JP7251899B2 (ja) | 2023-04-04 |
Family
ID=71085821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018231760A Active JP7251899B2 (ja) | 2018-12-11 | 2018-12-11 | 被加工物の加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7251899B2 (ja) |
KR (1) | KR20200071660A (ja) |
CN (1) | CN111312615B (ja) |
TW (1) | TWI808283B (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332410A (ja) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | 真空吸着装置 |
JP2012020374A (ja) * | 2010-07-15 | 2012-02-02 | Disco Corp | 研削装置 |
US20170047234A1 (en) * | 2015-08-11 | 2017-02-16 | Canon Kabushiki Kaisha | Imprint apparatus, and method of manufacturing article |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009056518A (ja) * | 2007-08-30 | 2009-03-19 | Kyocera Corp | 吸着装置およびそれを備えた加工システムならびに加工方法 |
JP5183169B2 (ja) * | 2007-11-28 | 2013-04-17 | 株式会社東京精密 | ウェーハ処理装置 |
JP5955635B2 (ja) | 2012-05-11 | 2016-07-20 | 株式会社ディスコ | 洗浄装置 |
-
2018
- 2018-12-11 JP JP2018231760A patent/JP7251899B2/ja active Active
-
2019
- 2019-11-22 KR KR1020190151131A patent/KR20200071660A/ko not_active Application Discontinuation
- 2019-12-09 TW TW108144932A patent/TWI808283B/zh active
- 2019-12-09 CN CN201911248258.2A patent/CN111312615B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003332410A (ja) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | 真空吸着装置 |
JP2012020374A (ja) * | 2010-07-15 | 2012-02-02 | Disco Corp | 研削装置 |
US20170047234A1 (en) * | 2015-08-11 | 2017-02-16 | Canon Kabushiki Kaisha | Imprint apparatus, and method of manufacturing article |
Also Published As
Publication number | Publication date |
---|---|
TWI808283B (zh) | 2023-07-11 |
CN111312615A (zh) | 2020-06-19 |
JP7251899B2 (ja) | 2023-04-04 |
CN111312615B (zh) | 2024-04-12 |
TW202022941A (zh) | 2020-06-16 |
KR20200071660A (ko) | 2020-06-19 |
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