JP2016181698A - 撮像装置および電子機器 - Google Patents
撮像装置および電子機器 Download PDFInfo
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- JP2016181698A JP2016181698A JP2016058639A JP2016058639A JP2016181698A JP 2016181698 A JP2016181698 A JP 2016181698A JP 2016058639 A JP2016058639 A JP 2016058639A JP 2016058639 A JP2016058639 A JP 2016058639A JP 2016181698 A JP2016181698 A JP 2016181698A
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- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Inorganic materials [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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Abstract
Description
本実施の形態では、本発明の一態様である撮像装置について、図面を参照して説明する。
本実施の形態では、本発明の一態様に用いることのできる酸化物半導体を有するトランジスタについて図面を用いて説明する。なお、本実施の形態における図面では、明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態2に示したトランジスタの構成要素について詳細を説明する。
以下では、本発明の一態様に用いることのできる酸化物半導体膜の構造について説明する。
本発明の一態様に係る撮像装置および当該撮像装置を含む半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る撮像装置および当該撮像装置を含む半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図47に示す。
11 撮像動作
12 データ保持動作
13 動作
15 遮光層
20 回路
21 画素部
23 カラムドライバ
24 カラムドライバ
25 ロードライバ
26 ロードライバ
27 回路
28 回路
29 回路
30 シリコン基板
31 トランジスタ
32 トランジスタ
35 活性層
36 シリコン基板
51a トランジスタ
51b トランジスタ
52a トランジスタ
52b トランジスタ
53a トランジスタ
53b トランジスタ
54a トランジスタ
54b トランジスタ
55a トランジスタ
56 高電圧電源
57a 容量素子
58a 容量素子
60a 光電変換素子
60b 光電変換素子
61 光電変換層
62 透光性導電層
63 半導体層
64 半導体層
65 半導体層
66 電極
66a 導電層
66b 導電層
67 隔壁
71 配線
72 配線
72a 導電層
72b 導電層
73 配線
75 配線
76 配線
77 配線
78 配線
79 配線
80 絶縁層
81 導電体
82 絶縁層
82a 絶縁層
82b 絶縁層
83 絶縁層
88 配線
93 配線
96 配線
99 配線
101 トランジスタ
102 トランジスタ
103 トランジスタ
104 トランジスタ
105 トランジスタ
106 トランジスタ
107 トランジスタ
108 トランジスタ
109 トランジスタ
110 トランジスタ
111 トランジスタ
112 トランジスタ
113 トランジスタ
115 基板
120 絶縁層
130 酸化物半導体層
130a 酸化物半導体層
130b 酸化物半導体層
130c 酸化物半導体層
140 導電層
141 導電層
142 導電層
150 導電層
151 導電層
152 導電層
160 絶縁層
170 導電層
171 導電層
172 導電層
173 導電層
175 絶縁層
180 絶縁層
190 絶縁層
231 領域
232 領域
233 領域
331 領域
332 領域
333 領域
334 領域
335 領域
701 配線
702 配線
901 筐体
902 筐体
903 表示部
904 表示部
905 マイク
906 スピーカー
907 操作キー
908 スタイラス
909 カメラ
911 筐体
912 表示部
919 カメラ
931 筐体
932 表示部
933 リストバンド
939 カメラ
951 筐体
952 レンズ
953 支持部
961 筐体
962 シャッターボタン
963 マイク
965 レンズ
967 発光部
971 筐体
972 筐体
973 表示部
974 操作キー
975 レンズ
976 接続部
1100 層
1200 層
1400 層
1500 回折格子
1600 層
2500 絶縁層
2510 遮光層
2520 有機樹脂層
2530 カラーフィルタ
2530a カラーフィルタ
2530b カラーフィルタ
2530c カラーフィルタ
2540 マイクロレンズアレイ
2550 光学変換層
2560 絶縁層
Claims (7)
- 第1の回路と、第2の回路と、を有する撮像装置であって、
前記第1の回路は、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、第1の光電変換素子と、を有し、
前記第1の光電変換素子の一方の電極は、前記第1のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第1の光電変換素子の一方の電極は、前記第2のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2のトランジスタのソース電極またはドレイン電極の他方は、前記第3のトランジスタのゲート電極と電気的に接続され、
前記第3のトランジスタのソース電極またはドレイン電極の一方は、前記第4のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2の回路は、第5のトランジスタと、第6のトランジスタと、第7のトランジスタと、第8のトランジスタと、第2の光電変換素子と、を有し、
前記第2の光電変換素子の一方の電極は、前記第5のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2の光電変換素子の一方の電極は、前記第6のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第5のトランジスタのソース電極またはドレイン電極の一方は、前記第5のトランジスタのゲート電極と電気的に接続され、
前記第6のトランジスタのソース電極またはドレイン電極の他方は、前記第7のトランジスタのゲート電極と電気的に接続され、
前記第7のトランジスタのソース電極またはドレイン電極の一方は、前記第8のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第1のトランジスタのゲート電極は、前記第5のトランジスタのゲート電極と電気的に接続されていることを特徴とする撮像装置。 - 第1の回路と、第2の回路と、を有する撮像装置であって、
前記第1の回路は、第1のトランジスタと、第2のトランジスタと、第3のトランジスタと、第4のトランジスタと、第1の光電変換素子と、を有し、
前記第1の光電変換素子の一方の電極は、前記第1のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第1の光電変換素子の一方の電極は、前記第2のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2のトランジスタのソース電極またはドレイン電極の他方は、前記第3のトランジスタのゲート電極と電気的に接続され、
前記第3のトランジスタのソース電極またはドレイン電極の一方は、前記第4のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第2の回路は、第5のトランジスタと、第2の光電変換素子と、を有し、
前記第2の光電変換素子の一方の電極は、前記第5のトランジスタのソース電極またはドレイン電極の一方と電気的に接続され、
前記第5のトランジスタのソース電極またはドレイン電極の一方は、前記第5のトランジスタのゲート電極と電気的に接続され、
前記第1のトランジスタのゲート電極は、前記第5のトランジスタのゲート電極と電気的に接続されていることを特徴とする撮像装置。 - 請求項1または2において、
前記第1の回路および前記第2の回路は、m行n列(mは1以上の自然数、nは3以上の自然数)のマトリクス状に設けられており、前記第2の回路は第1列および第n列に設けられていることを特徴とする撮像装置。 - 請求項1乃至3のいずれか一項において、
前記第2の回路は、遮光されていることを特徴とする撮像装置。 - 請求項1乃至4のいずれか一項において、
前記第1のトランジスタ、前記第2のトランジスタおよび前記第5のトランジスタは、活性層に酸化物半導体を有し、前記酸化物半導体は、Inと、Znと、M(MはAl、Ti、Ga、Sn、Y、Zr、La、Ce、NdまたはHf)と、を有することを特徴とする撮像装置。 - 請求項1乃至5のいずれか一項において、
前記第1の光電変換素子および前記第2の光電変換素子は、セレンを含む材料を有することを特徴とする撮像装置。 - 請求項1乃至6のいずれか一項に記載の撮像装置と、
表示装置と、
を有することを特徴とする電子機器。
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TWI713367B (zh) | 2015-07-07 | 2020-12-11 | 日商半導體能源研究所股份有限公司 | 成像裝置及其運作方法 |
US10163948B2 (en) * | 2015-07-23 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
KR102544169B1 (ko) | 2015-09-10 | 2023-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법 |
WO2018075581A1 (en) * | 2016-10-20 | 2018-04-26 | Invisage Technologies, Inc. | Noise mitigation in image sensors with selectable row readout |
US10892372B2 (en) | 2016-12-09 | 2021-01-12 | mPower Technology, Inc. | High performance solar cells, arrays and manufacturing processes therefor |
JP7139327B2 (ja) | 2017-06-27 | 2022-09-20 | 株式会社半導体エネルギー研究所 | 半導体装置および電子部品 |
KR102461817B1 (ko) * | 2017-09-05 | 2022-10-31 | 엘지디스플레이 주식회사 | 엑스레이 검출기용 어레이 기판과 이를 포함하는 엑스레이 검출기 및 그 제조 방법 |
US10914848B1 (en) * | 2018-07-13 | 2021-02-09 | mPower Technology, Inc. | Fabrication, integration and operation of multi-function radiation detection systems |
US10998371B1 (en) * | 2018-08-20 | 2021-05-04 | Apple Inc. | Film-based image sensor with suppressed light reflection and flare artifact |
KR20210046929A (ko) | 2019-10-21 | 2021-04-29 | 삼성전자주식회사 | 이미지 센서 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006042407A1 (en) * | 2004-10-20 | 2006-04-27 | Simon Fraser University | High gain digital imaging system |
US20070023614A1 (en) * | 2005-08-01 | 2007-02-01 | Samsung Electro-Mechanics Co., Ltd. | Cmos image sensor having dark current compensation function |
WO2011055626A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013175529A (ja) * | 2012-02-24 | 2013-09-05 | Sony Corp | 固体撮像装置、及び電子機器 |
US20140049675A1 (en) * | 2012-08-16 | 2014-02-20 | Sony Corporation | Solid-state imaging device, driving method, and electronic device |
Family Cites Families (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH01165275A (ja) * | 1987-12-21 | 1989-06-29 | Seiko Instr & Electron Ltd | イメージセンサーの暗電流除去回路 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH08181348A (ja) * | 1994-12-22 | 1996-07-12 | Copal Co Ltd | 光電変換装置 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
KR100894372B1 (ko) * | 2001-10-01 | 2009-04-22 | 파나소닉 주식회사 | 반도체 발광소자와 이를 이용한 발광장치 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7230592B2 (en) * | 2002-03-04 | 2007-06-12 | Hitachi, Ltd. | Organic electroluminescent light emitting display device |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
TWI360098B (en) | 2002-05-17 | 2012-03-11 | Semiconductor Energy Lab | Display apparatus and driving method thereof |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
JP4830270B2 (ja) * | 2004-06-14 | 2011-12-07 | ソニー株式会社 | 固体撮像装置および固体撮像装置の信号処理方法 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7872259B2 (en) | 2004-11-10 | 2011-01-18 | Canon Kabushiki Kaisha | Light-emitting device |
CA2585071A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
AU2005302962B2 (en) | 2004-11-10 | 2009-05-07 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP2007243093A (ja) * | 2006-03-13 | 2007-09-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置、撮像装置および信号処理方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
CN105786268B (zh) | 2010-02-19 | 2019-03-12 | 株式会社半导体能源研究所 | 显示设备及其驱动方法 |
JP5527031B2 (ja) * | 2010-06-14 | 2014-06-18 | 富士通株式会社 | 電流源回路 |
JP5601064B2 (ja) * | 2010-07-21 | 2014-10-08 | 富士ゼロックス株式会社 | 光電変換装置、電子写真感光体、プロセスカートリッジ、及び画像形成装置 |
WO2013011844A1 (en) * | 2011-07-15 | 2013-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
KR101938272B1 (ko) * | 2011-08-26 | 2019-01-15 | 삼성전자주식회사 | 신규한 퀴나크리돈 유도체, 이를 포함하는 광활성층 및 광전 변환 소자 |
TW201316315A (zh) * | 2011-10-05 | 2013-04-16 | Wintek Corp | 發光元件驅動電路及其相關的畫素電路與應用 |
US9183779B2 (en) * | 2012-02-23 | 2015-11-10 | Broadcom Corporation | AMOLED light sensing |
US8664865B2 (en) * | 2012-03-27 | 2014-03-04 | General Electric Company | Lighting system having an OLED light sensor |
US9495910B2 (en) * | 2013-11-22 | 2016-11-15 | Global Oled Technology Llc | Pixel circuit, driving method, display device, and inspection method |
WO2016046685A1 (en) | 2014-09-26 | 2016-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
JP2016092413A (ja) | 2014-10-29 | 2016-05-23 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
US9584707B2 (en) | 2014-11-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
US9548327B2 (en) | 2014-11-10 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device having a selenium containing photoelectric conversion layer |
-
2016
- 2016-03-23 JP JP2016058639A patent/JP6688116B2/ja active Active
- 2016-03-23 US US15/078,741 patent/US9634048B2/en active Active
-
2017
- 2017-03-13 US US15/456,773 patent/US10079253B2/en active Active
-
2020
- 2020-04-03 JP JP2020067200A patent/JP2020115570A/ja not_active Withdrawn
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006042407A1 (en) * | 2004-10-20 | 2006-04-27 | Simon Fraser University | High gain digital imaging system |
JP2008517541A (ja) * | 2004-10-20 | 2008-05-22 | サイモン フレーザー ユニバーシティー | 高利得デジタル画像システム |
US20080259182A1 (en) * | 2004-10-20 | 2008-10-23 | Simon Fraser University | High Gain Digital Imaging System |
US20070023614A1 (en) * | 2005-08-01 | 2007-02-01 | Samsung Electro-Mechanics Co., Ltd. | Cmos image sensor having dark current compensation function |
JP2007043689A (ja) * | 2005-08-01 | 2007-02-15 | Samsung Electro Mech Co Ltd | 暗電流補償機能を有するcmosイメージセンサ |
WO2011055626A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20110108836A1 (en) * | 2009-11-06 | 2011-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2011119711A (ja) * | 2009-11-06 | 2011-06-16 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013175529A (ja) * | 2012-02-24 | 2013-09-05 | Sony Corp | 固体撮像装置、及び電子機器 |
US20140049675A1 (en) * | 2012-08-16 | 2014-02-20 | Sony Corporation | Solid-state imaging device, driving method, and electronic device |
JP2014039159A (ja) * | 2012-08-16 | 2014-02-27 | Sony Corp | 固体撮像装置および駆動方法、並びに電子機器 |
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US20160284749A1 (en) | 2016-09-29 |
US9634048B2 (en) | 2017-04-25 |
US10079253B2 (en) | 2018-09-18 |
JP2020115570A (ja) | 2020-07-30 |
US20170186787A1 (en) | 2017-06-29 |
JP6688116B2 (ja) | 2020-04-28 |
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