JP2016139452A5 - - Google Patents

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JP2016139452A5
JP2016139452A5 JP2016009431A JP2016009431A JP2016139452A5 JP 2016139452 A5 JP2016139452 A5 JP 2016139452A5 JP 2016009431 A JP2016009431 A JP 2016009431A JP 2016009431 A JP2016009431 A JP 2016009431A JP 2016139452 A5 JP2016139452 A5 JP 2016139452A5
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electrode
potential
period
semiconductor device
transistor
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017130082A1 (en) 2016-01-29 2017-08-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
SG10201701689UA (en) 2016-03-18 2017-10-30 Semiconductor Energy Lab Semiconductor device, semiconductor wafer, and electronic device
US9806720B1 (en) 2016-10-07 2017-10-31 Analog Devices Global Compound semiconductor based inverter
SG11202006092XA (en) * 2017-12-27 2020-07-29 Semiconductor Energy Lab Memory device
EP4715819A1 (en) * 2024-09-18 2026-03-25 Imec VZW Non-volatile memory with stacked transistor pair
FR3167475A1 (fr) * 2024-10-15 2026-04-17 Commissariat à l'Energie Atomique et aux Energies Alternatives Dispositif mémoire comprenant une cellule mémoire à surface active optimisée

Family Cites Families (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053878B1 (en) 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPH01159895A (ja) 1987-12-17 1989-06-22 Sharp Corp 電気的に書き込み可能な不揮発性メモリに於けるデータ書き込み方法
US5555204A (en) 1993-06-29 1996-09-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3226677B2 (ja) 1993-09-21 2001-11-05 株式会社東芝 不揮発性半導体記憶装置
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
TW461096B (en) 1999-05-13 2001-10-21 Hitachi Ltd Semiconductor memory
JP2000339977A (ja) * 1999-05-28 2000-12-08 Nec Corp データ設定方法および装置、データ記憶装置、情報記憶媒体
JP2001319486A (ja) 2000-05-12 2001-11-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2001351386A (ja) 2000-06-07 2001-12-21 Sony Corp 半導体記憶装置およびその動作方法
JP3875570B2 (ja) 2001-02-20 2007-01-31 株式会社東芝 半導体記憶装置のデータ書き込み方法及び半導体記憶装置
JP4907011B2 (ja) 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
TW559814B (en) 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
US6876572B2 (en) 2003-05-21 2005-04-05 Altera Corporation Programmable logic devices with stabilized configuration cells for reduced soft error rates
US7336572B1 (en) 2004-08-19 2008-02-26 Marvell International Ltd. Detecting sync patterns for optical media
JP4728726B2 (ja) 2005-07-25 2011-07-20 株式会社東芝 半導体記憶装置
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP2007193862A (ja) * 2006-01-17 2007-08-02 Toshiba Corp 不揮発性半導体記憶装置
JP4199781B2 (ja) * 2006-04-12 2008-12-17 シャープ株式会社 不揮発性半導体記憶装置
JP4354498B2 (ja) * 2007-03-30 2009-10-28 Ｏｋｉセミコンダクタ株式会社 半導体メモリ装置の製造方法及び半導体メモリ装置の再生方法及び半導体メモリ装置の再出荷方法
KR100888847B1 (ko) 2007-06-28 2009-03-17 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
JP2010021170A (ja) 2008-07-08 2010-01-28 Hitachi Ltd 半導体装置およびその製造方法
TWI606592B (zh) 2008-09-01 2017-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR101631454B1 (ko) 2008-10-31 2016-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리회로
CN101740631B (zh) 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI467663B (zh) 2008-11-07 2015-01-01 Semiconductor Energy Lab 半導體裝置和該半導體裝置的製造方法
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8383470B2 (en) 2008-12-25 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor (TFT) having a protective layer and manufacturing method thereof
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
CN102473734B (zh) 2009-07-31 2015-08-12 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011013502A1 (en) 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5663231B2 (ja) 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
EP2284891B1 (en) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2011027701A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101791812B1 (ko) 2009-09-04 2017-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101746198B1 (ko) 2009-09-04 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 전자기기
WO2011027664A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
WO2011027676A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011027702A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
CN102511082B (zh) 2009-09-16 2016-04-27 株式会社半导体能源研究所 半导体器件及其制造方法
JP5537366B2 (ja) 2009-10-01 2014-07-02 株式会社半導体エネルギー研究所 半導体装置の駆動方法
WO2011043182A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
KR101772639B1 (ko) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN106200185A (zh) 2009-10-16 2016-12-07 株式会社半导体能源研究所 显示设备
KR102577885B1 (ko) 2009-10-16 2023-09-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101426723B1 (ko) 2009-10-16 2014-08-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011046025A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR102223581B1 (ko) 2009-10-21 2021-03-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
WO2011049230A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
CN104485336B (zh) 2009-10-21 2018-01-02 株式会社半导体能源研究所 半导体器件
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR20120091243A (ko) 2009-10-30 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102612741B (zh) 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
WO2011058934A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR20190124813A (ko) 2009-11-20 2019-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101803254B1 (ko) 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
KR101299256B1 (ko) * 2010-01-29 2013-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
KR101906151B1 (ko) 2010-02-19 2018-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 이를 이용한 표시 장치
JP5740169B2 (ja) 2010-02-19 2015-06-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
KR20180031075A (ko) 2010-02-19 2018-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US20110227082A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011121971A1 (ja) * 2010-03-30 2011-10-06 パナソニック株式会社 不揮発性記憶装置及び不揮発性記憶装置への書き込み方法
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
JP5923248B2 (ja) * 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
KR20120000499A (ko) 2010-06-25 2012-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
WO2012002104A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI545587B (zh) 2010-08-06 2016-08-11 半導體能源研究所股份有限公司 半導體裝置及驅動半導體裝置的方法
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
KR102115344B1 (ko) * 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
JP2012079399A (ja) 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
WO2012053374A1 (en) * 2010-10-20 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
CN103339715B (zh) 2010-12-03 2016-01-13 株式会社半导体能源研究所 氧化物半导体膜以及半导体装置
JP6030298B2 (ja) * 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8922464B2 (en) * 2011-05-11 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device and driving method thereof
WO2013047631A1 (en) 2011-09-29 2013-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112012004061B4 (de) 2011-09-29 2024-06-20 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
WO2013054933A1 (en) 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130040706A (ko) 2011-10-14 2013-04-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6082562B2 (ja) 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
CN103137701B (zh) 2011-11-30 2018-01-19 株式会社半导体能源研究所 晶体管及半导体装置
JP6035195B2 (ja) 2012-05-01 2016-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6228753B2 (ja) * 2012-06-01 2017-11-08 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、及び電子機器
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
WO2014073585A1 (en) 2012-11-08 2014-05-15 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film and method for forming metal oxide film
KR102495290B1 (ko) 2012-12-28 2023-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6141777B2 (ja) 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
TWI618081B (zh) 2013-05-30 2018-03-11 半導體能源研究所股份有限公司 半導體裝置的驅動方法
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015097586A1 (en) 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9817040B2 (en) 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
KR102437450B1 (ko) 2014-06-13 2022-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치를 포함하는 전자 기기
US10559667B2 (en) 2014-08-25 2020-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for measuring current of semiconductor device
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device

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