JP2016127273A - ウェハをダイに分割する方法 - Google Patents
ウェハをダイに分割する方法 Download PDFInfo
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- JP2016127273A JP2016127273A JP2015230840A JP2015230840A JP2016127273A JP 2016127273 A JP2016127273 A JP 2016127273A JP 2015230840 A JP2015230840 A JP 2015230840A JP 2015230840 A JP2015230840 A JP 2015230840A JP 2016127273 A JP2016127273 A JP 2016127273A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000002390 adhesive tape Substances 0.000 claims abstract description 71
- 238000005520 cutting process Methods 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 230000001070 adhesive effect Effects 0.000 claims description 40
- 239000000853 adhesive Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 110
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- High Energy & Nuclear Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
Description
Claims (13)
- 複数の分割ラインによって区切られた複数のデバイスを備えたデバイス領域(2)と、前記デバイス領域(2)の周りにデバイスが形成されない周辺限界領域(3)とを一面(1)に有するウェハ(W)をダイに分割する方法であって、
前記ウェハ(W)の前記一面(1)に前記ウェハ上のデバイスを保護する為の接着テープ(4)を付けるステップであって、前記接着テープ(4)が少なくとも一部、任意で、全部のデバイスに接着する、ステップと、
接続手段(10)によって、前記デバイスと接触する前記面の反対側にある前記接着テープ(4)の面に、前記接着テープ(4)を支持する為のキャリア(7)を接続するステップと、
前記ウェハの高さを調整する為に前記一面(1)の反対側にある前記ウェハ(W)の面(6)を研削するステップと、
前記分割ラインに沿って前記ウェハ(W)を切断するステップと、
を備え、
上部の上面視において、前記ウェハ(W)の前記デバイス領域(2)の完全に外側で、接続手段(10)を配置することを特徴とする、前記方法。 - 接続手段(10)は、接着特性を呈し、前記接着特性は、エネルギの入力によって取り外し可能であり、前記接続手段(10)は、好ましくは、UV硬化性接着剤、熱硬化性接着剤、それらの組合せを含む、請求項1に記載の方法。
- キャリア(7)および接着テープ(4)の間の接続を解除する為に前記接続手段(10)にエネルギを入力するステップと、
前記キャリア(7)を前記接着テープ(4)から取り除くステップと、
を更に有する、請求項2に記載の方法。 - 前記接続手段(10)は、環状形状を呈する、請求項1〜3のいずれか一項に記載の方法。
- 前記接続手段(10)の挿入の為に前記キャリア(7)において、凹部、好ましくは環状凹部を形成する、請求項1〜4のいずれか一項に記載の方法。
- 前記ウェハ(W)の一面(1)が、レーザによって部分的に切断され、好ましくは、前記ウェハの更なる領域が機械的に切断される、請求項1〜5のいずれか一項に記載の方法。
- 前記ウェハの更なる領域が、前記ウェハ(W)の前記一面(1)から、或いは、前記一面(1)の反対側にある前記ウェハ(W)の面(6)から、機械的に切断される、請求項6に記載の方法。
- 前記一面(1)の反対側にある前記ウェハ(W)の面(6)は、部分的に機械的に切断され、前記ウェハ(W)の更なる領域は、前記一面(1)の反対側にある前記ウェハ(W)の前記面(6)からレーザによって切断される、請求項1〜5のいずれか一項に記載の方法。
- 前記ウェハの前記切断は、前記ウェハの研削前に行われる、請求項1〜8のいずれか一項に記載の方法。
- 前記列挙された順序で請求項1に記載のステップが行われる、請求項1〜8のいずれか一項に記載の方法。
- 前記デバイスに接触する表面の反対側にある前記接着テープ(4)の表面は、前記一面(1)の反対側にある前記ウェハ(W)の前記表面と平行にされている、請求項1〜10のいずれか一項に記載の方法。
- 前記ウェハ(11)の研削された前記表面に接着性ピックアップテープ(11)を付けるステップを更に有する、請求項1〜11のいずれか一項に記載の方法。
- 前記キャリア(7)は、シリコンおよび/またはガラスで形成される、請求項1〜12のいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014227005.7 | 2014-12-29 | ||
DE102014227005.7A DE102014227005B4 (de) | 2014-12-29 | 2014-12-29 | Verfahren zum Aufteilen eines Wafers in Chips |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016127273A true JP2016127273A (ja) | 2016-07-11 |
JP6233936B2 JP6233936B2 (ja) | 2017-11-22 |
Family
ID=56116737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015230840A Active JP6233936B2 (ja) | 2014-12-29 | 2015-11-26 | ウェハをダイに分割する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9704749B2 (ja) |
JP (1) | JP6233936B2 (ja) |
KR (1) | KR101747561B1 (ja) |
CN (1) | CN105742212B (ja) |
DE (1) | DE102014227005B4 (ja) |
MY (1) | MY175846A (ja) |
SG (1) | SG10201509836PA (ja) |
TW (1) | TWI607486B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016112976A1 (de) | 2016-07-14 | 2018-01-18 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Wafers und Schichtstapel |
KR102030398B1 (ko) * | 2017-07-28 | 2019-10-10 | (주) 예스티 | 웨이퍼 다이싱 방법 및 웨이퍼를 다이싱하기 위한 시스템 |
KR102030409B1 (ko) * | 2017-07-28 | 2019-10-10 | (주) 예스티 | 웨이퍼 다이싱 방법 및 웨이퍼를 다이싱하기 위한 시스템 |
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JP2003234455A (ja) * | 2002-02-07 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造方法、電子デバイスおよび電子デバイス装置 |
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2014
- 2014-12-29 DE DE102014227005.7A patent/DE102014227005B4/de active Active
-
2015
- 2015-11-19 MY MYPI2015704202A patent/MY175846A/en unknown
- 2015-11-26 JP JP2015230840A patent/JP6233936B2/ja active Active
- 2015-11-30 SG SG10201509836PA patent/SG10201509836PA/en unknown
- 2015-12-16 US US14/970,756 patent/US9704749B2/en active Active
- 2015-12-18 TW TW104142789A patent/TWI607486B/zh active
- 2015-12-23 KR KR1020150184831A patent/KR101747561B1/ko active IP Right Grant
- 2015-12-25 CN CN201510993795.5A patent/CN105742212B/zh active Active
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2003234455A (ja) * | 2002-02-07 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 電子デバイスの製造方法、電子デバイスおよび電子デバイス装置 |
JP2004014956A (ja) * | 2002-06-11 | 2004-01-15 | Shinko Electric Ind Co Ltd | 微小半導体素子の加工処理方法 |
JP2005123568A (ja) * | 2003-09-26 | 2005-05-12 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
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JP2010056562A (ja) * | 2009-11-26 | 2010-03-11 | Nitto Denko Corp | 半導体チップの製造方法 |
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US9704749B2 (en) | 2017-07-11 |
US20160190010A1 (en) | 2016-06-30 |
DE102014227005B4 (de) | 2023-09-07 |
TW201635337A (zh) | 2016-10-01 |
KR101747561B1 (ko) | 2017-06-14 |
CN105742212A (zh) | 2016-07-06 |
CN105742212B (zh) | 2019-08-30 |
TWI607486B (zh) | 2017-12-01 |
MY175846A (en) | 2020-07-13 |
JP6233936B2 (ja) | 2017-11-22 |
DE102014227005A1 (de) | 2016-06-30 |
KR20160080075A (ko) | 2016-07-07 |
SG10201509836PA (en) | 2016-07-28 |
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