JP2016046525A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP2016046525A JP2016046525A JP2015160172A JP2015160172A JP2016046525A JP 2016046525 A JP2016046525 A JP 2016046525A JP 2015160172 A JP2015160172 A JP 2015160172A JP 2015160172 A JP2015160172 A JP 2015160172A JP 2016046525 A JP2016046525 A JP 2016046525A
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Abstract
【解決手段】太陽電池100は、半導体基板10と、半導体基板10の一面上に形成されるトンネル層20と、トンネル層20上に位置し、トンネル層20と異なる別個の層として構成され、物質、組成及び結晶構造のうちの少なくとも1つがトンネル層20と異なり、真性を有するバッファ部分22cを含むバッファ層22と、トンネル層20上に位置し、第1導電型を有する第1導電型領域32及び第2導電型を有する第2導電型領域34を含む導電型領域と、導電型領域に接続される電極42,44を含む。
【選択図】図1
Description
Claims (20)
- 半導体基板と、
前記半導体基板の一面上に形成されるトンネル層と、
前記トンネル層上に位置し、前記トンネル層と異なる別個の層として構成され、物質、組成及び結晶構造のうちの少なくとも1つが前記トンネル層と異なり、真性を有するバッファ部分を含むバッファ層と、
前記トンネル層上に位置し、第1導電型を有する第1導電型領域及び第2導電型を有する第2導電型領域を含む導電型領域と、
前記導電型領域に接続される電極と、
を含み、
前記バッファ層が、前記トンネル層に隣接して位置し、前記電極と離隔する、太陽電池。 - 前記トンネル層が絶縁物質を含み、
前記バッファ層が半絶縁物質を含む、請求項1に記載の太陽電池。 - 前記バッファ層がシリコン酸化物層で構成される、請求項1に記載の太陽電池。
- 前記バッファ層が、酸素含量が10〜45at%であるシリコン酸化物層で構成される部分を含む、請求項3に記載の太陽電池。
- 前記バッファ層の化学式がSiOx(ここで、xは、0.2〜1.5)である部分を含む、請求項3に記載の太陽電池。
- 前記バッファ層及び前記トンネル層がそれぞれシリコン酸化物層で構成され、前記トンネル層の酸素含量よりも前記バッファ層の酸素含量が少なく、前記トンネル層のシリコン含量よりも前記バッファ層のシリコン含量が多い、請求項1に記載の太陽電池。
- 前記トンネル層の酸素含量が60〜70at%であり、
前記バッファ層は、酸素含量が10〜45at%である部分を含む、請求項6に記載の太陽電池。 - 前記トンネル層の化学式がSiOy(ここで、yは、1.9〜2.1)であり、
前記バッファ層の化学式がSiOx(ここで、xは、0.2〜1.5)である部分を含む、請求項6に記載の太陽電池。 - 前記トンネル層は非晶質構造を有し、
前記バッファ層は多結晶構造を有する、請求項1に記載の太陽電池。 - 前記トンネル層の厚さよりも前記バッファ層の厚さがさらに大きい、請求項1に記載の太陽電池。
- 前記トンネル層の厚さ:前記バッファ層の厚さの比率が、1:1.5〜1:10である、請求項10に記載の太陽電池。
- 前記トンネル層の厚さが1.8nm以下であり、
前記バッファ層の厚さが10nm以下である、請求項10に記載の太陽電池。 - 前記第1導電型領域と前記第2導電型領域との間に位置するバリア領域をさらに含み、
前記バッファ部分は、前記バリア領域の少なくとも一部を構成する、請求項1に記載の太陽電池。 - 前記バッファ層は、前記第1導電型を有して前記第1導電型領域の少なくとも一部を構成する第1部分と、前記第2導電型を有して前記第2導電型領域の少なくとも一部を構成する第2部分とを含む、請求項13に記載の太陽電池。
- 前記第1導電型領域が前記第1部分からなり、
前記第2導電型領域が前記第2部分からなり、
前記バリア領域が前記バッファ部分からなる、請求項14に記載の太陽電池。 - 前記第1部分及び前記第2部分のうちの少なくとも1つは、前記トンネル層に隣接する部分が、前記トンネル層から遠くに位置した部分よりも高い酸素含量及び低いシリコン含量を有する、請求項15に記載の太陽電池。
- 前記第1導電型領域は、前記第1導電型を有し、前記第1部分上に位置する第1ドーピング部分をさらに含み、
前記第2導電型領域は、前記第2導電型を有し、前記第2部分上に位置する第2ドーピング部分をさらに含み、
前記第1部分のドーピング濃度が前記第1ドーピング部分のドーピング濃度よりも小さく、
前記第2部分のドーピング濃度が前記第2ドーピング部分のドーピング濃度よりも小さい、請求項13に記載の太陽電池。 - 半導体基板の一面上にトンネル層を形成するステップと、
前記トンネル層上に位置し、前記トンネル層と異なる別個の層として構成され、物質、組成及び結晶構造のうちの少なくとも1つが前記トンネル層と異なり、真性を有するバッファ部分を含むバッファ層を形成するステップと、
ドーパントをドープして、前記トンネル層上に第1導電型を有する第1導電型領域及び第2導電型を有する第2導電型領域を含む導電型領域を形成するステップと、
前記導電型領域に接続される電極を形成するステップと、
を含む、太陽電池の製造方法。 - 前記バッファ層が、低圧化学気相蒸着によって形成され、多結晶構造を有するシリコン酸化物層で構成される、請求項18に記載の太陽電池の製造方法。
- 前記導電型領域を形成するステップは、前記バッファ層の第1部分に第1導電型ドーパントをドープし、前記バッファ層の第2部分に第2導電型ドーパントをドープして、前記第1部分と前記第2部分との間にドープされていない前記バッファ部分が位置するようにする、請求項18に記載の太陽電池の製造方法。
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