JP2016029714A - 基板の高精度エッチングのプラズマ処理方法 - Google Patents
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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Abstract
Description
Claims (19)
- プラズマプロセスチャンバへ搬入されるマイクロエレクトロニクス基板を受け取る工程;
前記プラズマプロセスチャンバ内で希釈気体と反応気体を含む気体混合物を受ける工程;
前記プラズマプロセスチャンバ内で40mTorr以上のプロセス圧力を実現する工程;
前記気体混合物へマイクロ波電力を印加する工程;
ある周期にわたってオンとオフを非対称的に繰り返す交流バイアス電力を前記気体混合物に印加する工程であって、前記バイアス電力は駆動周波数で150Wを超えない大きさを有する工程;及び、
前記周期にわたって前記気体混合物の濃度を変化させる工程であって、前記変化は前記反応気体の体積にして0%乃至100%の範囲である工程、
を有する方法。 - 前記マイクロ波電力が、前記バイアス電力の印加がオフであるときに20eV以下のプラズマ電位を前記基板の近傍に生成する、請求項1に記載の方法。
- 前記希釈気体が、アルゴン、ヘリウム、又は窒素のうちの1種類以上を有し、かつ、
前記反応気体が、酸素含有気体又はハロゲン含有気体を有する、
請求項2に記載の方法。 - 前記駆動周波数が60MHz未満の周波数を含む、請求項1に記載の方法。
- 前記反応気体の濃度が、前記周期にわたって、体積にして10%乃至100%の間で変化する、請求項1に記載の方法。
- 前記プロセス圧力が500mTorrを超えない大きさを有する、請求項1に記載の方法。
- 前記バイアス電源が、前記周期中、300ms乃至5000msの間ではオンであり、かつ、100ms乃至3000msの間ではオフである、請求項1に記載の方法。
- 前記バイアス電力が、10W乃至50W又は100W乃至150Wの大きさを有する、請求項1に記載の方法。
- 前記マイクロ波電力が、500W乃至3000Wの大きさ、及び、300MHz乃至10GHzの駆動周波数を有する、請求項1に記載の方法。
- 前記駆動周波数が約2.45GHzを有する、請求項9に記載の方法。
- 基板ホルダを有するプロセスチャンバへ搬入される基板を受け取る工程;
前記プロセスチャンバ内で処理気体の第1混合物を用いて第1プラズマを生成する工程であって、前記第1プラズマは、前記基板近傍で少なくとも100:1の値を有する第1のラジカル束とイオン束との比(RIR);及び、前記基板近傍で20eV未満である第1イオンエネルギー、を有する工程;
前記プロセスチャンバ内で処理気体の第2混合物を用いて第2プラズマを生成する工程であって、前記第2混合物は前記第1混合物とは異なり、かつ、前記第2プラズマは、前記第1イオンエネルギーよりも高い第2イオンエネルギーを有する工程;並びに、
ある周期にわたって非対称的に前記第1プラズマと前記第2プラズマとを交互に繰り返す工程、
を有する基板処理方法。 - 前記第1プラズマを生成する工程が、前記プロセスチャンバ内で40mTorrよりも大きなプロセス圧力を維持する工程を有する、請求項11に記載の方法。
- 前記第1プラズマが120ms乃至240msの処理時間を有する、請求項11に記載の方法。
- 前記第1イオンエネルギーが10eV未満の大きさを有する、請求項11に記載の方法。
- 前記処理気体の第2混合物が希釈気体とハロゲンを有する、請求項11に記載の方法。
- 処理気体の第1群が酸素含有気体又はハロゲン含有気体を含む、請求項11に記載の方法。
- 前記第1プラズマと前記第2プラズマとを交互に繰り返す工程が、前記第2プラズマを生成するときに前記基板ホルダへバイアス電力を印加する工程を有する、請求項11に記載の方法。
- 前記第2プラズマが最大450msの処理時間を有する、請求項11に記載の方法。
- 前記第1のRIRが最大1000:1の値を有する、請求項11に記載の方法。
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US201462022856P | 2014-07-10 | 2014-07-10 | |
US201462022873P | 2014-07-10 | 2014-07-10 | |
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US62/022,873 | 2014-07-10 | ||
US201462040214P | 2014-08-21 | 2014-08-21 | |
US62/040,214 | 2014-08-21 |
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JP6541596B2 (ja) * | 2016-03-22 | 2019-07-10 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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KR20160007373A (ko) | 2016-01-20 |
JP2016028424A (ja) | 2016-02-25 |
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TW201614725A (en) | 2016-04-16 |
US20190096694A1 (en) | 2019-03-28 |
JP6159757B2 (ja) | 2017-07-05 |
TWI627672B (zh) | 2018-06-21 |
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KR101886349B1 (ko) | 2018-08-08 |
TWI593015B (zh) | 2017-07-21 |
US9768033B2 (en) | 2017-09-19 |
KR101745686B1 (ko) | 2017-06-12 |
US20160013063A1 (en) | 2016-01-14 |
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