US1033741A
(en)
|
1911-02-08 |
1912-07-23 |
Bona Sims |
Armored tread for pneumatic tires.
|
US1420104A
(en)
|
1921-05-10 |
1922-06-20 |
Edward W Howe |
Brush-block-boring machine
|
US1903005A
(en)
|
1930-11-20 |
1933-03-28 |
Gen Motors Corp |
Oil pump screen
|
US2187427A
(en)
|
1937-09-11 |
1940-01-16 |
Leslie H Middleton |
Dashboard fuse mounting
|
US2820109A
(en)
|
1952-03-22 |
1958-01-14 |
Cgs Lab Inc |
Magnetic amplifier
|
US2920104A
(en)
|
1958-07-01 |
1960-01-05 |
Vanderbilt Co R T |
Stabilized solutions of a dithiocarbamate
|
DE2302938C3
(de)
|
1973-01-22 |
1979-07-12 |
Polymer-Physik Gmbh & Co Kg, 2844 Lemfoerde |
Mehrstufiger Beschleuniger für geladene Teilchen mit Hochvakuumisolation
|
US4467211A
(en)
|
1981-04-16 |
1984-08-21 |
Control Data Corporation |
Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system
|
JPH0628231B2
(ja)
|
1985-07-09 |
1994-04-13 |
富士通株式会社 |
電子ビ−ム露光方法
|
US5103101A
(en)
|
1991-03-04 |
1992-04-07 |
Etec Systems, Inc. |
Multiphase printing for E-beam lithography
|
US5260579A
(en)
|
1991-03-13 |
1993-11-09 |
Fujitsu Limited |
Charged particle beam exposure system and charged particle beam exposure method
|
GB9107207D0
(en)
|
1991-04-05 |
1991-05-22 |
Tycho Technology Ltd |
Mechanical manipulator
|
US5369282A
(en)
|
1992-08-03 |
1994-11-29 |
Fujitsu Limited |
Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
|
JP3206143B2
(ja)
|
1992-10-20 |
2001-09-04 |
富士通株式会社 |
荷電粒子ビーム露光方法
|
JP3437306B2
(ja)
|
1995-02-01 |
2003-08-18 |
富士通株式会社 |
荷電粒子ビーム露光方法及び装置
|
US5841145A
(en)
|
1995-03-03 |
1998-11-24 |
Fujitsu Limited |
Method of and system for exposing pattern on object by charged particle beam
|
US6229595B1
(en)
|
1995-05-12 |
2001-05-08 |
The B. F. Goodrich Company |
Lithography system and method with mask image enlargement
|
JP3565652B2
(ja)
|
1996-04-25 |
2004-09-15 |
富士通株式会社 |
荷電粒子ビーム露光装置用透過マスク及びそれを利用した露光装置
|
JP3335845B2
(ja)
|
1996-08-26 |
2002-10-21 |
株式会社東芝 |
荷電ビーム描画装置及び描画方法
|
US6225637B1
(en)
|
1996-10-25 |
2001-05-01 |
Canon Kabushiki Kaisha |
Electron beam exposure apparatus
|
US5876902A
(en)
|
1997-01-28 |
1999-03-02 |
Etec Systems, Inc. |
Raster shaped beam writing strategy system and method for pattern generation
|
US5847959A
(en)
|
1997-01-28 |
1998-12-08 |
Etec Systems, Inc. |
Method and apparatus for run-time correction of proximity effects in pattern generation
|
JP3085454B2
(ja)
|
1997-03-13 |
2000-09-11 |
日本電気株式会社 |
荷電粒子線露光方法
|
JP3787417B2
(ja)
|
1997-06-11 |
2006-06-21 |
キヤノン株式会社 |
電子ビーム露光方法及び電子ビーム露光装置
|
MXPA00005989A
(es)
|
1997-12-17 |
2002-09-18 |
Int Coatings Ltd |
Proceso de revestimiento en polvo.
|
US6552353B1
(en)
|
1998-01-05 |
2003-04-22 |
Canon Kabushiki Kaisha |
Multi-electron beam exposure method and apparatus and device manufacturing method
|
US6014200A
(en)
|
1998-02-24 |
2000-01-11 |
Nikon Corporation |
High throughput electron beam lithography system
|
SE9800665D0
(sv)
|
1998-03-02 |
1998-03-02 |
Micronic Laser Systems Ab |
Improved method for projection printing using a micromirror SLM
|
US6043496A
(en)
|
1998-03-14 |
2000-03-28 |
Lucent Technologies Inc. |
Method of linewidth monitoring for nanolithography
|
JP2000056960A
(ja)
|
1998-08-13 |
2000-02-25 |
Ricoh Co Ltd |
ユーザインターフェイス装置
|
US6252339B1
(en)
|
1998-09-17 |
2001-06-26 |
Nikon Corporation |
Removable bombardment filament-module for electron beam projection systems
|
US6111932A
(en)
|
1998-12-14 |
2000-08-29 |
Photoelectron Corporation |
Electron beam multistage accelerator
|
US9188874B1
(en)
|
2011-05-09 |
2015-11-17 |
Kenneth C. Johnson |
Spot-array imaging system for maskless lithography and parallel confocal microscopy
|
JP2000252198A
(ja)
|
1999-03-02 |
2000-09-14 |
Advantest Corp |
荷電ビーム露光装置
|
JP2000260686A
(ja)
|
1999-03-08 |
2000-09-22 |
Toshiba Corp |
露光方法及び露光装置
|
KR100339140B1
(ko)
|
1999-04-28 |
2002-05-31 |
히로시 오우라 |
전자빔 노출 장치
|
US6720565B2
(en)
|
1999-06-30 |
2004-04-13 |
Applied Materials, Inc. |
Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
|
US6472673B1
(en)
|
1999-07-29 |
2002-10-29 |
Ims Ionen-Mikrofabrikations Systeme Gmbh |
Lithographic method for producing an exposure pattern on a substrate
|
WO2001039243A1
(en)
|
1999-11-23 |
2001-05-31 |
Ion Diagnostics, Inc. |
Electron optics for multi-beam electron beam lithography tool
|
JP2001168018A
(ja)
|
1999-12-13 |
2001-06-22 |
Canon Inc |
荷電粒子線露光装置、荷電粒子線露光方法及び露光補正データの決定方法、該方法を適用したデバイスの製造方法。
|
JP4585661B2
(ja)
|
2000-03-31 |
2010-11-24 |
キヤノン株式会社 |
電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
|
KR20020084288A
(ko)
|
2000-04-04 |
2002-11-04 |
주식회사 아도반테스토 |
다축전자렌즈를 이용한 멀티빔 노광장치, 반도체소자제조방법
|
US6509955B2
(en)
|
2000-05-25 |
2003-01-21 |
Ball Semiconductor, Inc. |
Lens system for maskless photolithography
|
US6473237B2
(en)
|
2000-11-14 |
2002-10-29 |
Ball Semiconductor, Inc. |
Point array maskless lithography
|
DE10127836A1
(de)
|
2001-06-08 |
2003-01-30 |
Giesecke & Devrient Gmbh |
Vorrichtung zur Untersuchung von Dokumenten
|
US7302111B2
(en)
*
|
2001-09-12 |
2007-11-27 |
Micronic Laser Systems A.B. |
Graphics engine for high precision lithography
|
JP3730153B2
(ja)
|
2001-10-18 |
2005-12-21 |
セイコーインスツル株式会社 |
プリンタのカッター装置
|
US6671975B2
(en)
|
2001-12-10 |
2004-01-06 |
C. William Hennessey |
Parallel kinematic micromanipulator
|
DE10161152B4
(de)
|
2001-12-12 |
2014-02-13 |
Medical Intelligence Medizintechnik Gmbh |
Positionierung des Behandlungsstrahls eines Strahlentherapiesystems mittels eines Hexapoden
|
US6768125B2
(en)
|
2002-01-17 |
2004-07-27 |
Ims Nanofabrication, Gmbh |
Maskless particle-beam system for exposing a pattern on a substrate
|
TW546595B
(en)
|
2002-07-23 |
2003-08-11 |
Internet Motion Navigator Corp |
Six-axis translation-type dynamic simulation device
|
KR100480609B1
(ko)
|
2002-08-09 |
2005-04-06 |
삼성전자주식회사 |
전자 빔 리소그래피 방법
|
US6896037B2
(en)
|
2002-10-29 |
2005-05-24 |
Duramax Marine, Llc |
Keel cooler with fluid flow diverter
|
US6767125B2
(en)
|
2003-01-21 |
2004-07-27 |
Red Devil Equipment Company |
Keyed paint container holder for a paint mixer
|
US6962835B2
(en)
|
2003-02-07 |
2005-11-08 |
Ziptronix, Inc. |
Method for room temperature metal direct bonding
|
JP2004282038A
(ja)
|
2003-02-28 |
2004-10-07 |
Canon Inc |
偏向器、偏向器を製造する方法、偏向器を適用した荷電粒子線露光装置
|
GB2399676B
(en)
|
2003-03-21 |
2006-02-22 |
Ims Ionen Mikrofab Syst |
Apparatus for enhancing the lifetime of stencil masks
|
US7138629B2
(en)
|
2003-04-22 |
2006-11-21 |
Ebara Corporation |
Testing apparatus using charged particles and device manufacturing method using the testing apparatus
|
ATE449978T1
(de)
|
2003-06-06 |
2009-12-15 |
Nikon Corp |
Halteeinrichtung für optische elemente, objektivtubus, belichtungseinrichtung und herstellungsverfahren für bauelemente
|
GB2406704B
(en)
|
2003-09-30 |
2007-02-07 |
Ims Nanofabrication Gmbh |
Particle-optic electrostatic lens
|
DE102004025832A1
(de)
|
2004-05-24 |
2005-12-22 |
Carl Zeiss Smt Ag |
Optikmodul für ein Objektiv
|
JP4313145B2
(ja)
|
2003-10-07 |
2009-08-12 |
株式会社日立ハイテクノロジーズ |
荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
|
GB2408143B
(en)
|
2003-10-20 |
2006-11-15 |
Ims Nanofabrication Gmbh |
Charged-particle multi-beam exposure apparatus
|
GB2408383B
(en)
|
2003-10-28 |
2006-05-10 |
Ims Nanofabrication Gmbh |
Pattern-definition device for maskless particle-beam exposure apparatus
|
GB2413694A
(en)
|
2004-04-30 |
2005-11-02 |
Ims Nanofabrication Gmbh |
Particle-beam exposure apparatus
|
GB2414111B
(en)
|
2004-04-30 |
2010-01-27 |
Ims Nanofabrication Gmbh |
Advanced pattern definition for particle-beam processing
|
JP4634076B2
(ja)
|
2004-06-30 |
2011-02-16 |
キヤノン株式会社 |
荷電粒子線露光装置及びデバイス製造方法
|
JP2006079911A
(ja)
|
2004-09-09 |
2006-03-23 |
Hitachi High-Technologies Corp |
電子ビーム電流計測方法、電子ビーム描画装置および電子ビーム検出器
|
JP2006126823A
(ja)
|
2004-09-30 |
2006-05-18 |
Fujitsu Ltd |
可変矩形型電子ビーム露光装置及びパターン露光・形成方法
|
JP4460987B2
(ja)
|
2004-09-30 |
2010-05-12 |
株式会社東芝 |
電子線描画方法および磁気記録媒体の製造方法
|
DE102004052994C5
(de)
|
2004-11-03 |
2010-08-26 |
Vistec Electron Beam Gmbh |
Multistrahlmodulator für einen Partikelstrahl und Verwendung des Multistrahlmodulators zur maskenlosen Substratsstrukturierung
|
GB2435348B
(en)
|
2004-11-17 |
2009-06-24 |
Ims Nanofabrication Ag |
Pattern lock system for particle-beam exposure apparatus
|
US7459247B2
(en)
|
2004-12-27 |
2008-12-02 |
Asml Netherlands B.V. |
Lithographic apparatus and device manufacturing method
|
JP5068180B2
(ja)
|
2005-02-11 |
2012-11-07 |
アイエムエス ナノファブリケーション エージー |
静電ゾーンプレートを備える荷電粒子曝露
|
US20080257096A1
(en)
|
2005-04-01 |
2008-10-23 |
Zhenqi Zhu |
Flexible Parallel Manipulator For Nano-, Meso- or Macro-Positioning With Multi-Degrees of Freedom
|
JP4648087B2
(ja)
|
2005-05-25 |
2011-03-09 |
キヤノン株式会社 |
偏向器の作製方法、荷電粒子線露光装置、および、デバイス製造方法
|
EP2270834B9
(en)
|
2005-09-06 |
2013-07-10 |
Carl Zeiss SMT GmbH |
Particle-optical component
|
JP4638327B2
(ja)
|
2005-10-17 |
2011-02-23 |
新日本工機株式会社 |
パラレルメカニズム装置、パラレルメカニズム装置のキャリブレーション方法、キャリブレーションプログラム、及び記録媒体
|
US7642034B2
(en)
|
2006-01-31 |
2010-01-05 |
Shin-Etsu Chemical Co., Ltd. |
Polymer, resist protective coating material, and patterning process
|
WO2007112465A1
(en)
|
2006-04-03 |
2007-10-11 |
Ims Nanofabrication Ag |
Particle-beam exposure apparatus with overall-modulation of a patterned beam
|
JP4758829B2
(ja)
*
|
2006-06-06 |
2011-08-31 |
株式会社ニューフレアテクノロジー |
荷電ビーム描画装置および描画方法
|
JP4857963B2
(ja)
*
|
2006-07-05 |
2012-01-18 |
ソニー株式会社 |
パターン抽出方法,パターン抽出装置および半導体装置の製造方法
|
US7738077B2
(en)
*
|
2006-07-31 |
2010-06-15 |
Asml Netherlands B.V. |
Patterning device utilizing sets of stepped mirrors and method of using same
|
JP5241195B2
(ja)
|
2006-10-30 |
2013-07-17 |
アイエムエス ナノファブリカツィオン アーゲー |
荷電粒子露光装置
|
US20080142728A1
(en)
|
2006-10-30 |
2008-06-19 |
Applied Materials, Inc. |
Mechanical scanner
|
JP4932433B2
(ja)
|
2006-11-02 |
2012-05-16 |
株式会社ニューフレアテクノロジー |
電子ビーム描画装置及び電子ビーム描画方法
|
DE102008010123A1
(de)
|
2007-02-28 |
2008-09-04 |
Ims Nanofabrication Ag |
Vielstrahl-Ablenkarray-Einrichtung für maskenlose Teilchenstrahl-Bearbeitung
|
NL2001369C2
(nl)
|
2007-03-29 |
2010-06-14 |
Ims Nanofabrication Ag |
Werkwijze voor maskerloze deeltjesbundelbelichting.
|
US7930653B2
(en)
|
2007-04-17 |
2011-04-19 |
Micronic Laser Systems Ab |
Triangulating design data and encoding design intent for microlithographic printing
|
JP5491704B2
(ja)
|
2007-05-14 |
2014-05-14 |
イーエムエス ナノファブリカツィオン アーゲー |
対向電極アレイ板を有するパターン定義装置
|
JP4996978B2
(ja)
|
2007-05-28 |
2012-08-08 |
株式会社ニューフレアテクノロジー |
描画方法
|
DE102007034232B4
(de)
|
2007-07-23 |
2012-03-01 |
Bruker Daltonik Gmbh |
Dreidimensionale Hochfrequenz-Ionenfallen hoher Einfangeffizienz
|
EP2019415B1
(en)
|
2007-07-24 |
2016-05-11 |
IMS Nanofabrication AG |
Multi-beam source
|
JP2011511465A
(ja)
|
2008-02-05 |
2011-04-07 |
ニル・テクノロジー・エーピーエス |
電子ビームリソグラフィを行うための方法
|
CN102113083B
(zh)
|
2008-06-04 |
2016-04-06 |
迈普尔平版印刷Ip有限公司 |
对目标进行曝光的方法和系统
|
US8227768B2
(en)
|
2008-06-25 |
2012-07-24 |
Axcelis Technologies, Inc. |
Low-inertia multi-axis multi-directional mechanically scanned ion implantation system
|
NL2003304C2
(en)
|
2008-08-07 |
2010-09-14 |
Ims Nanofabrication Ag |
Compensation of dose inhomogeneity and image distortion.
|
DE102008053180B4
(de)
|
2008-10-24 |
2012-07-12 |
Advanced Mask Technology Center Gmbh & Co. Kg |
Teilchenstrahlschreibverfahren, Teilchenstrahlschreibvorrichtung und Wartungsverfahren für selbige
|
ATE527678T1
(de)
|
2008-11-17 |
2011-10-15 |
Ims Nanofabrication Ag |
Verfahren zur maskenlosen teilchenstrahlbelichtung
|
EP2190003B1
(en)
|
2008-11-20 |
2014-10-01 |
IMS Nanofabrication AG |
Constant current multi-beam patterning
|
NL2003716A
(en)
*
|
2008-11-24 |
2010-05-26 |
Brion Tech Inc |
Harmonic resist model for use in a lithographic apparatus and a device manufacturing method.
|
JP5634052B2
(ja)
|
2009-01-09 |
2014-12-03 |
キヤノン株式会社 |
荷電粒子線描画装置およびデバイス製造方法
|
US8198601B2
(en)
|
2009-01-28 |
2012-06-12 |
Ims Nanofabrication Ag |
Method for producing a multi-beam deflector array device having electrodes
|
EP2228817B1
(en)
*
|
2009-03-09 |
2012-07-18 |
IMS Nanofabrication AG |
Global point spreading function in multi-beam patterning
|
EP2251893B1
(en)
|
2009-05-14 |
2014-10-29 |
IMS Nanofabrication AG |
Multi-beam deflector array means with bonded electrodes
|
KR101636523B1
(ko)
|
2009-05-20 |
2016-07-06 |
마퍼 리쏘그라피 아이피 비.브이. |
듀얼 패스 스캐닝
|
CN102460632B
(zh)
|
2009-05-20 |
2015-11-25 |
迈普尔平版印刷Ip有限公司 |
产生二级图案以供光刻处理的方法和使用该方法的图案产生器
|
EP2478548B1
(en)
|
2009-09-18 |
2017-03-29 |
Mapper Lithography IP B.V. |
Charged particle optical system with multiple beams
|
US8546767B2
(en)
|
2010-02-22 |
2013-10-01 |
Ims Nanofabrication Ag |
Pattern definition device with multiple multibeam array
|
JP2011199279A
(ja)
|
2010-03-18 |
2011-10-06 |
Ims Nanofabrication Ag |
ターゲット上へのマルチビーム露光のための方法
|
US8542797B2
(en)
|
2010-09-24 |
2013-09-24 |
Elekta Ab (Publ) |
Radiotherapy apparatus configured to track a motion of a target region using a combination of a multileaf collimator and a patient support
|
JP5662756B2
(ja)
|
2010-10-08 |
2015-02-04 |
株式会社ニューフレアテクノロジー |
荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
|
JP5809419B2
(ja)
|
2011-02-18 |
2015-11-10 |
株式会社ニューフレアテクノロジー |
荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
|
JP5758325B2
(ja)
*
|
2011-03-01 |
2015-08-05 |
株式会社ニューフレアテクノロジー |
荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
|
KR101854148B1
(ko)
|
2011-05-09 |
2018-05-03 |
삼성전자주식회사 |
전자빔 노광 장치 및 이를 이용한 레티클 제조 방법
|
JP2013004216A
(ja)
|
2011-06-14 |
2013-01-07 |
Canon Inc |
荷電粒子線レンズ
|
CN202204836U
(zh)
|
2011-07-28 |
2012-04-25 |
辽宁省电力有限公司 |
高压试验设备绝缘支架
|
NL2009797A
(en)
|
2011-11-29 |
2013-05-30 |
Asml Netherlands Bv |
Apparatus and method for converting a vector-based representation of a desired device pattern for a lithography apparatus, apparatus and method for providing data to a programmable patterning device, a lithography apparatus and a device manufacturing method.
|
JP5977941B2
(ja)
|
2011-12-19 |
2016-08-24 |
株式会社ニューフレアテクノロジー |
マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
|
JP5383786B2
(ja)
|
2011-12-27 |
2014-01-08 |
キヤノン株式会社 |
荷電粒子線描画装置および描画方法、それを用いた物品の製造方法
|
JP5956797B2
(ja)
|
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|
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|
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|
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(ja)
*
|
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|
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(en)
|
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|
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(ja)
|
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|
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(zh)
|
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|
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(ja)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(en)
|
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|
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(ja)
*
|
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|
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(en)
|
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|