JP2015535147A5 - - Google Patents

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Publication number
JP2015535147A5
JP2015535147A5 JP2015543161A JP2015543161A JP2015535147A5 JP 2015535147 A5 JP2015535147 A5 JP 2015535147A5 JP 2015543161 A JP2015543161 A JP 2015543161A JP 2015543161 A JP2015543161 A JP 2015543161A JP 2015535147 A5 JP2015535147 A5 JP 2015535147A5
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JP
Japan
Prior art keywords
capacitor
plate
conductive layer
mol
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015543161A
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English (en)
Japanese (ja)
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JP2015535147A (ja
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Publication date
Priority claimed from US13/684,059 external-priority patent/US9012966B2/en
Application filed filed Critical
Publication of JP2015535147A publication Critical patent/JP2015535147A/ja
Publication of JP2015535147A5 publication Critical patent/JP2015535147A5/ja
Pending legal-status Critical Current

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JP2015543161A 2012-11-21 2013-11-21 ミドルオブライン（ｍｉｄｄｌｅｏｆｌｉｎｅ）（ｍｏｌ）導電層を使用したキャパシタ Pending JP2015535147A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/684,059 2012-11-21
US13/684,059 US9012966B2 (en) 2012-11-21 2012-11-21 Capacitor using middle of line (MOL) conductive layers
PCT/US2013/071347 WO2014081982A1 (en) 2012-11-21 2013-11-21 Capacitor using middle of line (mol) conductive layers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018134843A Division JP2018164113A (ja) 2012-11-21 2018-07-18 ミドルオブライン（ｍｉｄｄｌｅ ｏｆ ｌｉｎｅ）（ｍｏｌ）導電層を使用したキャパシタ

Publications (2)

Publication Number Publication Date
JP2015535147A JP2015535147A (ja) 2015-12-07
JP2015535147A5 true JP2015535147A5 (OSRAM) 2016-12-22

Family

ID=49726882

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015543161A Pending JP2015535147A (ja) 2012-11-21 2013-11-21 ミドルオブライン（ｍｉｄｄｌｅｏｆｌｉｎｅ）（ｍｏｌ）導電層を使用したキャパシタ
JP2018134843A Pending JP2018164113A (ja) 2012-11-21 2018-07-18 ミドルオブライン（ｍｉｄｄｌｅ ｏｆ ｌｉｎｅ）（ｍｏｌ）導電層を使用したキャパシタ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018134843A Pending JP2018164113A (ja) 2012-11-21 2018-07-18 ミドルオブライン（ｍｉｄｄｌｅ ｏｆ ｌｉｎｅ）（ｍｏｌ）導電層を使用したキャパシタ

Country Status (6)

Country Link
US (2) US9012966B2 (OSRAM)
EP (1) EP2923388A1 (OSRAM)
JP (2) JP2015535147A (OSRAM)
KR (1) KR20150087312A (OSRAM)
CN (1) CN104798219B (OSRAM)
WO (1) WO2014081982A1 (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US9012966B2 (en) 2012-11-21 2015-04-21 Qualcomm Incorporated Capacitor using middle of line (MOL) conductive layers
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FR3018139B1 (fr) 2014-02-28 2018-04-27 Stmicroelectronics (Rousset) Sas Circuit integre a composants, par exemple transistors nmos, a regions actives a contraintes en compression relachees
US9269610B2 (en) * 2014-04-15 2016-02-23 Qualcomm Incorporated Pattern between pattern for low profile substrate
FR3025335B1 (fr) 2014-08-29 2016-09-23 Stmicroelectronics Rousset Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant
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