FR3025335B1 - Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant - Google Patents

Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant

Info

Publication number
FR3025335B1
FR3025335B1 FR1458099A FR1458099A FR3025335B1 FR 3025335 B1 FR3025335 B1 FR 3025335B1 FR 1458099 A FR1458099 A FR 1458099A FR 1458099 A FR1458099 A FR 1458099A FR 3025335 B1 FR3025335 B1 FR 3025335B1
Authority
FR
France
Prior art keywords
integrated circuit
retro
manufacturing
design
improving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1458099A
Other languages
English (en)
Other versions
FR3025335A1 (fr
Inventor
Pascal Fornara
Christian Rivero
Guilhem Bouton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1458099A priority Critical patent/FR3025335B1/fr
Priority to CN201520602231.XU priority patent/CN204966495U/zh
Priority to CN201510490352.4A priority patent/CN105390432B/zh
Priority to US14/829,292 priority patent/US9640493B2/en
Publication of FR3025335A1 publication Critical patent/FR3025335A1/fr
Application granted granted Critical
Publication of FR3025335B1 publication Critical patent/FR3025335B1/fr
Priority to US15/466,396 priority patent/US9780045B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/573—Protection from inspection, reverse engineering or tampering using passive means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR1458099A 2014-08-29 2014-08-29 Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant Expired - Fee Related FR3025335B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1458099A FR3025335B1 (fr) 2014-08-29 2014-08-29 Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant
CN201520602231.XU CN204966495U (zh) 2014-08-29 2015-08-11 致使对集成电路的逆向工程更加困难的集成电路
CN201510490352.4A CN105390432B (zh) 2014-08-29 2015-08-11 致使对集成电路的逆向工程更加困难的集成电路制造方法、以及对应的集成电路
US14/829,292 US9640493B2 (en) 2014-08-29 2015-08-18 Method for fabrication of an integrated circuit rendering a reverse engineering of the integrated circuit more difficult and corresponding integrated circuit
US15/466,396 US9780045B2 (en) 2014-08-29 2017-03-22 Method for fabrication of an integrated circuit rendering a reverse engineering of the integrated circuit more difficult and corresponding integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1458099A FR3025335B1 (fr) 2014-08-29 2014-08-29 Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant

Publications (2)

Publication Number Publication Date
FR3025335A1 FR3025335A1 (fr) 2016-03-04
FR3025335B1 true FR3025335B1 (fr) 2016-09-23

Family

ID=52358855

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1458099A Expired - Fee Related FR3025335B1 (fr) 2014-08-29 2014-08-29 Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant

Country Status (3)

Country Link
US (2) US9640493B2 (fr)
CN (2) CN105390432B (fr)
FR (1) FR3025335B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3025335B1 (fr) * 2014-08-29 2016-09-23 Stmicroelectronics Rousset Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant
KR20180064820A (ko) * 2016-12-06 2018-06-15 삼성전자주식회사 반도체 장치
CN110895647B (zh) * 2018-08-22 2024-09-24 北京芯愿景软件技术股份有限公司 一种增加集成电路逆向工程难度的方法及芯片

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FR3018139B1 (fr) 2014-02-28 2018-04-27 Stmicroelectronics (Rousset) Sas Circuit integre a composants, par exemple transistors nmos, a regions actives a contraintes en compression relachees
FR3025335B1 (fr) * 2014-08-29 2016-09-23 Stmicroelectronics Rousset Procede de fabrication d'un circuit integre rendant plus difficile une retro-conception du circuit integre et circuit integre correspondant

Also Published As

Publication number Publication date
FR3025335A1 (fr) 2016-03-04
CN105390432A (zh) 2016-03-09
CN105390432B (zh) 2018-07-31
US9780045B2 (en) 2017-10-03
US9640493B2 (en) 2017-05-02
US20170194267A1 (en) 2017-07-06
CN204966495U (zh) 2016-01-13
US20160064339A1 (en) 2016-03-03

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