JP2015532768A5 - - Google Patents

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JP2015532768A5
JP2015532768A5 JP2015528710A JP2015528710A JP2015532768A5 JP 2015532768 A5 JP2015532768 A5 JP 2015532768A5 JP 2015528710 A JP2015528710 A JP 2015528710A JP 2015528710 A JP2015528710 A JP 2015528710A JP 2015532768 A5 JP2015532768 A5 JP 2015532768A5
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sublayer
electrode
electron
hole
channel layer
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JP2015528710A
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JP2015532768A (ja
JP6178966B2 (ja
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JP2015528710A 2012-08-25 2013-08-23 改善された性能を有する発光トランジスタ Active JP6178966B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261693288P 2012-08-25 2012-08-25
US61/693,288 2012-08-25
US201261701760P 2012-09-17 2012-09-17
US61/701,760 2012-09-17
US13/843,910 US9099670B2 (en) 2012-08-25 2013-03-15 Light-emitting transistors with improved performance
US13/843,910 2013-03-15
PCT/US2013/056532 WO2014035842A1 (en) 2012-08-25 2013-08-23 Light-emitting transistors with improved performance

Publications (3)

Publication Number Publication Date
JP2015532768A JP2015532768A (ja) 2015-11-12
JP2015532768A5 true JP2015532768A5 (enExample) 2016-10-06
JP6178966B2 JP6178966B2 (ja) 2017-08-16

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JP2015528710A Active JP6178966B2 (ja) 2012-08-25 2013-08-23 改善された性能を有する発光トランジスタ

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US (3) US8901547B2 (enExample)
EP (1) EP2888768B1 (enExample)
JP (1) JP6178966B2 (enExample)
KR (1) KR101931409B1 (enExample)
CN (1) CN104718638A (enExample)
WO (2) WO2014035842A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901547B2 (en) 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors
KR102033097B1 (ko) * 2012-11-05 2019-10-17 삼성디스플레이 주식회사 유기 발광 트랜지스터 및 유기 발광 표시 장치
KR20150001528A (ko) * 2013-06-27 2015-01-06 삼성전자주식회사 수직형 유기 발광 트랜지스터 및 이를 구비한 유기 엘이디 조명장치
KR20150140504A (ko) * 2014-06-05 2015-12-16 삼성디스플레이 주식회사 유기 발광 트랜지스터
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
WO2016014980A1 (en) 2014-07-24 2016-01-28 E.T.C.S.R.L. Organic electroluminescent transistor
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
TWI545178B (zh) * 2014-08-20 2016-08-11 Near infrared light emitting diode and its manufacturing method
US10263207B2 (en) 2014-11-06 2019-04-16 Postech Academy-Industry Foundation Perovskite light emitting device containing exciton buffer layer and method for manufacturing same
WO2016072810A1 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
EP3021373A1 (en) * 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
CN105355799A (zh) * 2015-10-12 2016-02-24 Tcl集团股份有限公司 一种量子点发光场效应晶体管及其制备方法
KR102537438B1 (ko) 2015-11-24 2023-05-30 삼성디스플레이 주식회사 화합물 및 이를 포함하는 유기 발광 소자
KR102552273B1 (ko) 2015-11-26 2023-07-07 삼성디스플레이 주식회사 축합환 화합물 및 이를 포함한 유기 발광 소자
KR102546673B1 (ko) * 2015-12-03 2023-06-23 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 표시 장치
CN105867018B (zh) * 2016-03-28 2019-08-02 深圳市华星光电技术有限公司 石墨烯液晶显示装置、石墨烯发光元件及其制作方法
JP6709706B2 (ja) * 2016-08-30 2020-06-17 Ｊｘｔｇエネルギー株式会社 発光電気化学素子及び該発光電気化学素子を有する発光装置
CN106449724A (zh) * 2016-11-24 2017-02-22 Tcl集团股份有限公司 顶发射量子点发光场效应晶体管及其制备方法
CN107425035B (zh) * 2017-05-11 2019-11-05 京东方科技集团股份有限公司 有机发光晶体管和显示面板
KR102421769B1 (ko) * 2017-11-13 2022-07-18 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시장치
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
WO2020101713A1 (en) 2018-11-16 2020-05-22 Hewlett-Packard Development Company, L.P. Organic light emitting transistor
EP3664171B1 (en) * 2018-12-06 2021-05-12 Flexterra, Inc. A thin-film transistor comprising organic semiconductor materials
CN111370587B (zh) * 2018-12-25 2022-12-20 广东聚华印刷显示技术有限公司 发光晶体管及其制备方法
CN112018257B (zh) * 2019-05-30 2024-02-02 成都辰显光电有限公司 一种显示装置
US11563186B2 (en) * 2019-11-01 2023-01-24 Samsung Electronics Co., Ltd. Photoelectric devices having charge transport layer including first charge transport material and second charge transport material and sensors and electronic devices having the same
US12324302B2 (en) 2020-02-11 2025-06-03 Hewlett-Packard Development Company, L.P. Dual plate OLET displays
TWI731616B (zh) * 2020-03-09 2021-06-21 財團法人紡織產業綜合研究所 電致發光線
TW202229165A (zh) * 2020-09-30 2022-08-01 美商Ｎｃｘ公司 共電沉積形成場發射陰極方法
CN116096118A (zh) * 2021-11-03 2023-05-09 京东方科技集团股份有限公司 发光器件及其控制方法、发光基板

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683823A (en) 1996-01-26 1997-11-04 Eastman Kodak Company White light-emitting organic electroluminescent devices
US5747183A (en) 1996-11-04 1998-05-05 Motorola, Inc. Organic electroluminescent light emitting material and device using same
JP2001319781A (ja) 2000-05-02 2001-11-16 Fuji Photo Film Co Ltd 有機発光素子材料の選択方法及びその材料を用いた有機発光素子
US6585914B2 (en) 2000-07-24 2003-07-01 Northwestern University N-type thiophene semiconductors
JP4590089B2 (ja) 2000-11-22 2010-12-01 キヤノン株式会社 有機ｅｌ素子
US7125989B2 (en) 2001-11-26 2006-10-24 International Business Machines Corporation Hetero diels-alder adducts of pentacene as soluble precursors of pentacene
US20060261329A1 (en) * 2004-03-24 2006-11-23 Michele Muccini Organic electroluminescence devices
DE602004031596D1 (de) 2003-03-28 2011-04-14 Michele Muccini Organische elektrolumineszente vorrichtung
JP4423444B2 (ja) 2003-04-08 2010-03-03 スタンレー電気株式会社 発光型有機ｔｆｔ素子
JP2005136383A (ja) * 2003-10-09 2005-05-26 Canon Inc 有機半導体素子、その製造方法および有機半導体装置
US7074502B2 (en) 2003-12-05 2006-07-11 Eastman Kodak Company Organic element for electroluminescent devices
JP4530334B2 (ja) * 2004-01-21 2010-08-25 国立大学法人京都大学 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
WO2005076815A2 (en) 2004-01-26 2005-08-25 Northwestern University PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES
CN100487930C (zh) 2004-08-30 2009-05-13 国立大学法人京都大学 有机半导体发光装置及使用它的显示装置
WO2006098420A1 (ja) * 2005-03-17 2006-09-21 Pioneer Corporation 発光素子及び表示装置
JP4972727B2 (ja) 2005-07-20 2012-07-11 日本電信電話株式会社 有機半導体発光素子およびそれを用いた表示装置、ならびに有機半導体発光素子の製造方法
US20090140955A1 (en) 2005-10-14 2009-06-04 Pioneer Corporation Light-emitting element and display device
JP4808479B2 (ja) * 2005-11-28 2011-11-02 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP2007200746A (ja) * 2006-01-27 2007-08-09 Dainippon Printing Co Ltd 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP4809682B2 (ja) * 2006-01-30 2011-11-09 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
US7569693B2 (en) 2006-06-12 2009-08-04 Northwestern University Naphthalene-based semiconductor materials and methods of preparing and use thereof
JP4934774B2 (ja) * 2006-09-05 2012-05-16 大日本印刷株式会社 有機発光トランジスタ及び表示装置
JPWO2008059817A1 (ja) * 2006-11-14 2010-03-04 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
EP2086974B1 (en) 2006-11-17 2013-07-24 Polyera Corporation Diimide-based semiconductor materials and methods of preparing and using the same
US8203139B2 (en) * 2006-11-24 2012-06-19 Idemitsu Kosan Co., Ltd Organic thin film transistor and organic thin film light-emitting transistor using an organic semiconductor layer having an aromatic hydrocarbon group or an aromatic heterocyclic group in the center thereof
US8431448B2 (en) * 2006-12-28 2013-04-30 Dai Nippon Printing Co., Ltd. Organic transistor element, and method of manufacturing the same by concurrently doping an organic semiconductor layer and wet etching an electrode provided on the organic semiconductor layer
JP5228341B2 (ja) * 2007-03-14 2013-07-03 セイコーエプソン株式会社 有機エレクトロルミネッセンス素子の製造方法及び有機トランジスタの製造方法
JP5465825B2 (ja) * 2007-03-26 2014-04-09 出光興産株式会社 半導体装置、半導体装置の製造方法及び表示装置
GB0706756D0 (en) 2007-04-05 2007-05-16 Imp Innovations Ltd Improvements in organic field-effect transistors
TWI335681B (en) 2007-05-18 2011-01-01 Ind Tech Res Inst White light organic electroluminescent element device
WO2009017798A1 (en) 2007-08-02 2009-02-05 Northwestern University Conjugated monomers and polymers and preparation and use thereof
TWI322141B (en) 2007-08-28 2010-03-21 Nat Univ Tsing Hua Host material for blue oled and white light emitting device utilizing the same
JP5148211B2 (ja) * 2007-08-30 2013-02-20 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP5299807B2 (ja) * 2007-08-31 2013-09-25 出光興産株式会社 ベンゾジチオフェン誘導体並びにそれを用いた有機薄膜トランジスタ及び有機薄膜発光トランジスタ
US20100301311A1 (en) 2007-10-01 2010-12-02 Rohm Co., Ltd. Organic Semiconductor Device
JP5647900B2 (ja) 2008-01-31 2015-01-07 ノースウエスタン ユニバーシティ 溶液処理型高移動度無機薄膜トランジスタ
EP2240528B1 (en) 2008-02-05 2017-04-12 Basf Se Semiconductor materials prepared from rylene-( -acceptor) copolymers
KR101638199B1 (ko) 2008-02-05 2016-07-08 바스프 에스이 페릴렌 반도체 및 이의 제조 방법 및 용도
KR101496846B1 (ko) * 2008-12-24 2015-03-02 삼성디스플레이 주식회사 유기 발광 트랜지스터를 포함하는 표시 장치 및 이의 제조 방법
US8927971B2 (en) 2009-04-06 2015-01-06 University Of Kentucky Research Foundation Semiconducting compounds and devices incorporating same
GB0912034D0 (en) * 2009-07-10 2009-08-19 Cambridge Entpr Ltd Patterning
JPWO2011055529A1 (ja) * 2009-11-05 2013-03-28 出光興産株式会社 含ヘテロ環非対称性芳香族化合物、有機薄膜トランジスタ用化合物、及びそれを用いた有機薄膜トランジスタ
JP2011100938A (ja) 2009-11-09 2011-05-19 Nippon Shokubai Co Ltd 有機発光素子、該有機発光素子を用いた表示装置、及び電子機器
CN102933581A (zh) 2009-12-29 2013-02-13 破立纪元有限公司 作为有机半导体的硫代硫酸芳香二酰亚胺以及使用它们的器件
US8212243B2 (en) 2010-01-22 2012-07-03 Eastman Kodak Company Organic semiconducting compositions and N-type semiconductor devices
WO2011147523A1 (en) * 2010-05-27 2011-12-01 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
EP2612376B1 (en) 2010-08-29 2018-11-21 Flexterra, Inc. Semiconducting compounds and related compositions and devices
BR112013013873A2 (pt) * 2010-12-07 2016-09-13 Univ Florida fonte diluída de matriz ativa habilitada para um transistor emitindo luz orgânica vertical incluindo painel de exibição e fonte diluída dupla e invertida habilitada para um transistor de efeito de efeito de campo vertical (ds-vfet) duplo invertido
JPWO2012090462A1 (ja) * 2010-12-28 2014-06-05 出光興産株式会社 有機半導体材料、当該材料を含んでなる塗布液、及び有機薄膜トランジスタ
US8710225B2 (en) * 2011-01-10 2014-04-29 Basf Se Thiocyanato or isothiocyanato substituted naphthalene diimide and rylene diimide compounds and their use as n-type semiconductors
JP5916761B2 (ja) 2011-01-28 2016-05-11 ノースウェスタン ユニバーシティ 金属酸化物薄膜およびナノ材料から誘導される金属複合薄膜の低温製造
JP5790095B2 (ja) * 2011-04-01 2015-10-07 ソニー株式会社 薄膜素子及びその製造方法、並びに、画像表示装置の製造方法
US20140203254A1 (en) * 2011-06-22 2014-07-24 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Organic Electronic Component
US9214474B2 (en) * 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US10005879B2 (en) * 2012-02-03 2018-06-26 Basf Se Method for producing an organic semiconductor device
US8878169B2 (en) * 2012-02-07 2014-11-04 Polyera Corporation Photocurable polymeric materials and related electronic devices
US8901547B2 (en) 2012-08-25 2014-12-02 Polyera Corporation Stacked structure organic light-emitting transistors

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