JP6178966B2 - 改善された性能を有する発光トランジスタ - Google Patents

改善された性能を有する発光トランジスタ Download PDF

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JP6178966B2
JP6178966B2 JP2015528710A JP2015528710A JP6178966B2 JP 6178966 B2 JP6178966 B2 JP 6178966B2 JP 2015528710 A JP2015528710 A JP 2015528710A JP 2015528710 A JP2015528710 A JP 2015528710A JP 6178966 B2 JP6178966 B2 JP 6178966B2
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electrode
sublayer
electron
hole
channel layer
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JP2015532768A5 (enExample
JP2015532768A (ja
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ファチェッティ アントニオ
ファチェッティ アントニオ
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フレックステラ インコーポレイティッド
フレックステラ インコーポレイティッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2015528710A 2012-08-25 2013-08-23 改善された性能を有する発光トランジスタ Active JP6178966B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261693288P 2012-08-25 2012-08-25
US61/693,288 2012-08-25
US201261701760P 2012-09-17 2012-09-17
US61/701,760 2012-09-17
US13/843,910 US9099670B2 (en) 2012-08-25 2013-03-15 Light-emitting transistors with improved performance
US13/843,910 2013-03-15
PCT/US2013/056532 WO2014035842A1 (en) 2012-08-25 2013-08-23 Light-emitting transistors with improved performance

Publications (3)

Publication Number Publication Date
JP2015532768A JP2015532768A (ja) 2015-11-12
JP2015532768A5 JP2015532768A5 (enExample) 2016-10-06
JP6178966B2 true JP6178966B2 (ja) 2017-08-16

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JP2015528710A Active JP6178966B2 (ja) 2012-08-25 2013-08-23 改善された性能を有する発光トランジスタ

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US (3) US8901547B2 (enExample)
EP (1) EP2888768B1 (enExample)
JP (1) JP6178966B2 (enExample)
KR (1) KR101931409B1 (enExample)
CN (1) CN104718638A (enExample)
WO (2) WO2014035842A1 (enExample)

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Also Published As

Publication number Publication date
US9099670B2 (en) 2015-08-04
US20140054613A1 (en) 2014-02-27
WO2014035841A1 (en) 2014-03-06
US20160036007A1 (en) 2016-02-04
EP2888768B1 (en) 2017-04-05
EP2888768A1 (en) 2015-07-01
JP2015532768A (ja) 2015-11-12
KR20150046126A (ko) 2015-04-29
CN104718638A (zh) 2015-06-17
WO2014035842A1 (en) 2014-03-06
US8901547B2 (en) 2014-12-02
US20140054566A1 (en) 2014-02-27
KR101931409B1 (ko) 2018-12-20
US9437842B2 (en) 2016-09-06

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