JP2015196839A - ガス供給管、およびガス処理装置 - Google Patents
ガス供給管、およびガス処理装置 Download PDFInfo
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- JP2015196839A JP2015196839A JP2014073604A JP2014073604A JP2015196839A JP 2015196839 A JP2015196839 A JP 2015196839A JP 2014073604 A JP2014073604 A JP 2014073604A JP 2014073604 A JP2014073604 A JP 2014073604A JP 2015196839 A JP2015196839 A JP 2015196839A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
図1は、ガス処理装置の第1の実施形態である半導体製造装置100(以下、単に、製造装置100と称する)の概略図である。
本実施形態のガス供給管40は、図7および図8に示すように、第1のガス管23の外側に第2のガス管24を同軸に配置した二重管構造を有する。
このガス供給管50は、第1のガス管23の流入口22に隣接したもう一つの流入口22を有し、且つこの流入口22と反対側の端部が第2のガス管24の流入側の端部に接続した第3のガス管25を有する。第3のガス管25は、ガス噴出孔21を有していない。また、第1のガス管23に設けた第1のガス噴出孔21aと第2のガス管24に設けた第2のガス噴出孔21bは図10に示すように同軸に配置されている。これ以外の構成は、上述した第1の実施形態と同様である。
このガス供給管80は、1本の断面略円形のパイプ80aを有し、このパイプ80aの周壁に沿って複数のガス噴出孔21を備えている。そして、このパイプ80a内には、パイプ内の空間の略半分を占めるラティス82が設けられている。具体的には、ラティス82は、複数のガス噴出孔21の内側を塞ぐ位置に配置されている。ラティス82は、複数の微細孔を有する多孔体であり、ガスを流通可能な構造物である。
このガス処理装置200は、処理チャンバー210内にセットした被処理物201に沿ってガス供給管10を有する。ガス供給管10の代わりに、上述した第2乃至第8の実施形態のガス供給管20、30、40、50、60、70、80を用いても良い。
Claims (7)
- ガスが流入する流入口を有するとともに、長手方向に沿って互いに離間して配置された複数の第1のガス噴出孔を有する第1のガス管と、
この第1のガス管に併設され、長手方向に沿って互いに離間して配置された複数の第2のガス噴出孔を有し、上記第1のガス管と逆向きにガスを流す第2のガス管と、
を有するガス供給管。 - 上記第1のガス管の上記流入口と反対の端部と上記第2のガス管の流入側の端部が接続されている、
請求項1のガス供給管。 - 上記第1のガス管に併設され、上記第1のガス管の流入口に隣接した流入口を有し、上記流入口と反対の端部が上記第2のガス管の流入側の端部に接続した、第3のガス管をさらに有する、
請求項1のガス供給管。 - 上記複数の第1のガス噴出孔と上記複数の第2のガス噴出孔はそれぞれ対向している、
請求項1乃至3のいずれかのガス供給管。 - 上記複数の第1のガス噴出孔と上記複数の第2のガス噴出孔は互いにずれている、
請求項1乃至3のいずれかのガス供給管。 - 上記複数の第1のガス噴出孔と上記複数の第2のガス噴出孔はそれぞれ同軸に配置されている、
請求項1乃至3のいずれかのガス供給管。 - 被処理物を収容した処理チャンバーと、
この処理チャンバー内へガスを供給する請求項1乃至6のいずれかのガス供給管と、
このガス供給管の上記流入口に接続されたガス供給源と、
を有するガス処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014073604A JP6320824B2 (ja) | 2014-03-31 | 2014-03-31 | ガス供給管、およびガス処理装置 |
KR1020150029035A KR101704897B1 (ko) | 2014-03-31 | 2015-03-02 | 가스 공급관 및 가스 처리 장치 |
US14/643,165 US10364498B2 (en) | 2014-03-31 | 2015-03-10 | Gas supply pipe, and gas treatment equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014073604A JP6320824B2 (ja) | 2014-03-31 | 2014-03-31 | ガス供給管、およびガス処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015196839A true JP2015196839A (ja) | 2015-11-09 |
JP6320824B2 JP6320824B2 (ja) | 2018-05-09 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014073604A Active JP6320824B2 (ja) | 2014-03-31 | 2014-03-31 | ガス供給管、およびガス処理装置 |
Country Status (3)
Country | Link |
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US (1) | US10364498B2 (ja) |
JP (1) | JP6320824B2 (ja) |
KR (1) | KR101704897B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110072661A (zh) * | 2016-12-14 | 2019-07-30 | 川崎重工业株式会社 | 焊枪和全姿势焊接装置 |
JP2021150440A (ja) * | 2020-03-18 | 2021-09-27 | 東京エレクトロン株式会社 | 基板処理装置及びクリーニング方法 |
KR20220111660A (ko) | 2021-02-02 | 2022-08-09 | 도쿄엘렉트론가부시키가이샤 | 처리 장치 및 처리 방법 |
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FI124414B (fi) * | 2010-04-30 | 2014-08-29 | Beneq Oy | Lähde ja järjestely substraatin käsittelemiseksi |
JP6435967B2 (ja) * | 2015-03-31 | 2018-12-12 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP6737139B2 (ja) * | 2016-11-14 | 2020-08-05 | 東京エレクトロン株式会社 | ガスインジェクタ、及び縦型熱処理装置 |
KR20230113657A (ko) | 2018-03-23 | 2023-07-31 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 |
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JP7109331B2 (ja) * | 2018-10-02 | 2022-07-29 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
CN109545720B (zh) * | 2018-11-30 | 2021-04-16 | 上海华力微电子有限公司 | 一种吹扫接头装置及吹扫系统 |
JP7340170B2 (ja) * | 2019-06-25 | 2023-09-07 | 東京エレクトロン株式会社 | ガス導入構造、熱処理装置及びガス供給方法 |
KR20220076343A (ko) * | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
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US11292073B2 (en) | 2016-12-14 | 2022-04-05 | Kawasaki Jukogyo Kabushiki Kaisha | Welding torch and all-position welding device |
JP2021150440A (ja) * | 2020-03-18 | 2021-09-27 | 東京エレクトロン株式会社 | 基板処理装置及びクリーニング方法 |
JP7365946B2 (ja) | 2020-03-18 | 2023-10-20 | 東京エレクトロン株式会社 | 基板処理装置及びクリーニング方法 |
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KR20150113822A (ko) | 2015-10-08 |
JP6320824B2 (ja) | 2018-05-09 |
US20150275369A1 (en) | 2015-10-01 |
US10364498B2 (en) | 2019-07-30 |
KR101704897B1 (ko) | 2017-02-08 |
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