JP2015185661A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2015185661A JP2015185661A JP2014060164A JP2014060164A JP2015185661A JP 2015185661 A JP2015185661 A JP 2015185661A JP 2014060164 A JP2014060164 A JP 2014060164A JP 2014060164 A JP2014060164 A JP 2014060164A JP 2015185661 A JP2015185661 A JP 2015185661A
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- die bonding
- bonding pad
- semiconductor element
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000007789 sealing Methods 0.000 claims description 81
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000005538 encapsulation Methods 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
2… 基板
3… 導電性接合部材
4… 半導体素子
4a… 光出射面
4b… 上部電極
4c… 側面
5… ボンディングワイヤ
5a… ボールボンディング
5b… ステッチボンディング
6… 第一の封止部
7… 第二の封止部
10… 第一の導電パターン
11… 外部接続用電極部
12… ダイボンディング部
13… ダイボンディングパッド
13a… 外周縁
14… 中継部
15… 延出部
15a… 先端部
16… 露出中継部
16a… 露出端部
17… 突出部
20… 第二の導電パターン
21… 外部接続用電極部
22… ワイヤボンディングパッド
30… レジスト層
31… レジスト層
40… 第一延出部
41… 第二延出部
42… 第三延出部
Claims (5)
- 基板と、
前記基板上の両側に形成された一対の導電パターンと、
前記一対の導電パターンのうちの一方の導電パターン上にダイボンディングされた半導体素子と、
前記半導体素子を覆って封止するように前記基板上に形成された透光性封止部を備え、
前記一方の導電パターンは、前記半導体素子がダイボンディングされたダイボンディングパッド及び該ダイボンディングパッドから等角度間隔で放射状に延長された複数の延長部を有することを特徴とする半導体装置。 - 前記複数の延長部が奇数の場合はいずれも略同一の寸法形状を有し、偶数の場合は少なくとも前記ダイボンディングパッドを挟んで互いに対向する位置にある延長部同士が略同一の寸法形状を有することを特徴とする請求項1に記載の半導体装置。
- 前記半導体素子は上面の光出射面が長方形の場合は、偶数の前記延長部を有するダイボンディングパッドに前記光出射面の長辺の夫々が該ダイボンディングパッドを挟んで互いに対向する延長部の方向を向くようにダイボンディングされることを特徴とする請求項1又は請求項2に記載の半導体装置。
- 前記透光性樹脂部は、蛍光体が分散されていることを特徴とする請求項1〜請求項3のいずれかに記載の半導体装置。
- 前記透光性樹脂部を覆って封止するように更に透光性封止部が前記基板上に形成されていることを特徴とする請求項1〜請求項4のいずれかに記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014060164A JP6487626B2 (ja) | 2014-03-24 | 2014-03-24 | 半導体装置 |
US14/626,997 US9263656B2 (en) | 2014-03-24 | 2015-02-20 | Semiconductor light-emitting device having double encapsulating structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014060164A JP6487626B2 (ja) | 2014-03-24 | 2014-03-24 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2015185661A true JP2015185661A (ja) | 2015-10-22 |
JP6487626B2 JP6487626B2 (ja) | 2019-03-20 |
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JP2014060164A Active JP6487626B2 (ja) | 2014-03-24 | 2014-03-24 | 半導体装置 |
Country Status (2)
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US (1) | US9263656B2 (ja) |
JP (1) | JP6487626B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020025034A (ja) * | 2018-08-08 | 2020-02-13 | ローム株式会社 | Ledパッケージ、led表示装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105990492A (zh) * | 2015-02-12 | 2016-10-05 | 展晶科技(深圳)有限公司 | 发光二极管封装体及其制造方法 |
JP6790416B2 (ja) * | 2016-03-31 | 2020-11-25 | 日亜化学工業株式会社 | 発光装置 |
JP6842246B2 (ja) * | 2016-05-26 | 2021-03-17 | ローム株式会社 | Ledモジュール |
JP6519549B2 (ja) * | 2016-08-02 | 2019-05-29 | 日亜化学工業株式会社 | 発光装置 |
CN106711133A (zh) * | 2017-01-09 | 2017-05-24 | 丽智电子(昆山)有限公司 | 一种sot‑23贴片封装结构 |
Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5514746U (ja) * | 1978-07-14 | 1980-01-30 | ||
JPH07235558A (ja) * | 1994-02-21 | 1995-09-05 | Nichia Chem Ind Ltd | Ledチップのリードフレームへのダイボンド方法 |
JPH1050734A (ja) * | 1996-07-31 | 1998-02-20 | Shichizun Denshi:Kk | チップ型半導体 |
JP2000164933A (ja) * | 1998-11-26 | 2000-06-16 | Nippon Denyo | 光源装置 |
JP2001168397A (ja) * | 1999-12-09 | 2001-06-22 | Rohm Co Ltd | チップ型半導体装置 |
JP2003264267A (ja) * | 2002-03-08 | 2003-09-19 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2004079742A (ja) * | 2002-08-16 | 2004-03-11 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2005302944A (ja) * | 2004-04-09 | 2005-10-27 | Tabuchi Electric Co Ltd | 発光装置 |
JP2006165326A (ja) * | 2004-12-08 | 2006-06-22 | Stanley Electric Co Ltd | 発光ダイオード及びその製造方法 |
JP2008251936A (ja) * | 2007-03-30 | 2008-10-16 | Rohm Co Ltd | 半導体発光装置 |
JP2009076524A (ja) * | 2007-09-19 | 2009-04-09 | Nichia Corp | 発光装置 |
JP2010258409A (ja) * | 2009-04-23 | 2010-11-11 | Samsung Electro-Mechanics Co Ltd | 発光ダイオードパッケージ |
JP2011165888A (ja) * | 2010-02-09 | 2011-08-25 | Sharp Corp | 発光装置、面光源装置、液晶表示装置、および発光装置の製造方法 |
JP2012169432A (ja) * | 2011-02-14 | 2012-09-06 | E&E Japan株式会社 | チップled |
US20130001623A1 (en) * | 2011-07-01 | 2013-01-03 | Gio Optoelectronics Corp. | Light-emitting apparatus and manufacturing method thereof |
JP2013041867A (ja) * | 2011-08-11 | 2013-02-28 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2013048264A (ja) * | 2005-08-04 | 2013-03-07 | Cree Inc | 分配された封止剤を用いた半導体発光デバイス用パッケージとそれをパッケージする方法 |
JP2013110353A (ja) * | 2011-11-24 | 2013-06-06 | Sharp Corp | 発光パッケージ、発光パッケージアレイおよび発光パッケージの製造方法 |
JP2014017415A (ja) * | 2012-07-10 | 2014-01-30 | Toyoda Gosei Co Ltd | Led搭載用基板及びその製造方法 |
JP2014022581A (ja) * | 2012-07-19 | 2014-02-03 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843280A (en) * | 1988-01-15 | 1989-06-27 | Siemens Corporate Research & Support, Inc. | A modular surface mount component for an electrical device or led's |
JP4198928B2 (ja) | 2002-03-26 | 2008-12-17 | 星和電機株式会社 | Ledランプの製造方法、及びledランプ |
JP5340583B2 (ja) * | 2007-11-26 | 2013-11-13 | スタンレー電気株式会社 | 半導体発光装置 |
CN101533819B (zh) * | 2008-03-14 | 2013-01-16 | 旭丽电子(广州)有限公司 | 半导体封装构造、应用于半导体封装构造的导线架及导电件 |
-
2014
- 2014-03-24 JP JP2014060164A patent/JP6487626B2/ja active Active
-
2015
- 2015-02-20 US US14/626,997 patent/US9263656B2/en active Active
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5514746U (ja) * | 1978-07-14 | 1980-01-30 | ||
JPH07235558A (ja) * | 1994-02-21 | 1995-09-05 | Nichia Chem Ind Ltd | Ledチップのリードフレームへのダイボンド方法 |
JPH1050734A (ja) * | 1996-07-31 | 1998-02-20 | Shichizun Denshi:Kk | チップ型半導体 |
JP2000164933A (ja) * | 1998-11-26 | 2000-06-16 | Nippon Denyo | 光源装置 |
JP2001168397A (ja) * | 1999-12-09 | 2001-06-22 | Rohm Co Ltd | チップ型半導体装置 |
JP2003264267A (ja) * | 2002-03-08 | 2003-09-19 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2004079742A (ja) * | 2002-08-16 | 2004-03-11 | Rohm Co Ltd | 半導体チップを使用した半導体装置 |
JP2005302944A (ja) * | 2004-04-09 | 2005-10-27 | Tabuchi Electric Co Ltd | 発光装置 |
JP2006165326A (ja) * | 2004-12-08 | 2006-06-22 | Stanley Electric Co Ltd | 発光ダイオード及びその製造方法 |
JP2013048264A (ja) * | 2005-08-04 | 2013-03-07 | Cree Inc | 分配された封止剤を用いた半導体発光デバイス用パッケージとそれをパッケージする方法 |
JP2008251936A (ja) * | 2007-03-30 | 2008-10-16 | Rohm Co Ltd | 半導体発光装置 |
JP2009076524A (ja) * | 2007-09-19 | 2009-04-09 | Nichia Corp | 発光装置 |
JP2010258409A (ja) * | 2009-04-23 | 2010-11-11 | Samsung Electro-Mechanics Co Ltd | 発光ダイオードパッケージ |
JP2011165888A (ja) * | 2010-02-09 | 2011-08-25 | Sharp Corp | 発光装置、面光源装置、液晶表示装置、および発光装置の製造方法 |
JP2012169432A (ja) * | 2011-02-14 | 2012-09-06 | E&E Japan株式会社 | チップled |
US20130001623A1 (en) * | 2011-07-01 | 2013-01-03 | Gio Optoelectronics Corp. | Light-emitting apparatus and manufacturing method thereof |
JP2013041867A (ja) * | 2011-08-11 | 2013-02-28 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2013110353A (ja) * | 2011-11-24 | 2013-06-06 | Sharp Corp | 発光パッケージ、発光パッケージアレイおよび発光パッケージの製造方法 |
JP2014017415A (ja) * | 2012-07-10 | 2014-01-30 | Toyoda Gosei Co Ltd | Led搭載用基板及びその製造方法 |
JP2014022581A (ja) * | 2012-07-19 | 2014-02-03 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020025034A (ja) * | 2018-08-08 | 2020-02-13 | ローム株式会社 | Ledパッケージ、led表示装置 |
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JP6487626B2 (ja) | 2019-03-20 |
US9263656B2 (en) | 2016-02-16 |
US20150270462A1 (en) | 2015-09-24 |
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