CN105990492A - 发光二极管封装体及其制造方法 - Google Patents

发光二极管封装体及其制造方法 Download PDF

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CN105990492A
CN105990492A CN201510074191.0A CN201510074191A CN105990492A CN 105990492 A CN105990492 A CN 105990492A CN 201510074191 A CN201510074191 A CN 201510074191A CN 105990492 A CN105990492 A CN 105990492A
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light emitting
emitting diode
electrode
encapsulation body
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邱镜学
林雅雯
凃博闵
黄世晟
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to TW104106453A priority patent/TW201630215A/zh
Priority to US14/835,954 priority patent/US9577163B2/en
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Abstract

一种发光二极管封装体，包括基板、设置在基板上表面的第一电极、第二电极及位于第一电极及第二电极之间的发光二极管，还包括由疏水性材料制成的挡圈，所述挡圈固定于所述基板上且围设所述发光二极管于其内，封装层形成在所述挡圈内并包覆所述发光二极管，所述封装层包括一底面及自底面延伸的弧形侧面，所述封装层的弧形侧面贴设所述挡圈的内表面。

Description

发光二极管封装体及其制造方法
技术领域
本发明涉及一种发光装置，特别涉及一种发光二极管封装体及其制造方法。
背景技术
LED作为一种高效光源,具有环保、省电、寿命长等诸多特点已经被广泛应用到各种领域。
传统的LED封装体将LED芯片固定在封装基板上，通过在LED芯片外围涂覆封装材料层而保护LED芯片。所述的大部分封装材料层由胶体与荧光粉混合而成，自LED芯片出射的光线进入封装材料层并激发荧光粉后出射至外界。然而普通封装材料层中，因胶体固有的强粘滞性使得形成在LED各周缘部的封装材料层形状不一，导致自LED芯片出射的光线对荧光粉的激发程度不一而使LED封装体出光不均匀。
发明内容
有鉴于此，有必要提供一种出光均匀的发光二极管封装体及其制造方法。
一种发光二极管封装体，包括基板、设置在基板上表面的第一电极、第二电极及位于第一电极及第二电极之间的发光二极管，还包括由疏水性材料制成的挡圈，所述挡圈固定于所述基板上且围设所述发光二极管于其内，封装层形成在所述挡圈内并包覆所述发光二极管，所述封装层包括一底面及自底面延伸的弧形侧面，所述封装层的弧形侧面贴设所述挡圈的内表面。
本发明中，所述挡圈使得所述封装层相互聚集后关于发光二极管对称，所述发光二极管产生的光线可均匀激发所述封装层中的荧光粉而均匀出光，从而提高了当所述发光二极管封装体出光均匀性。
附图说明
图1是本发明所述发光二极管封装体的立体图。
图2为图1所示发光二极管封装体的沿II-II剖面的剖视图。
图3为图1所示发光二极管封装体的俯视图。
图4-7为本发明所述的发光二极管封装体制造方法流程图。
主要元件符号说明
基板 10
上表面 101
下表面 102
发光二极管 20
挡圈 30
封装层 40
内侧壁 31
外侧壁 32
顶壁 33
底面 41
弧形侧面 42
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1-2所示，本发明所述的发光二极管封装体包括一基板10，设置在基板10一侧表面的多个发光二极管（LED）20、一第一电极11和一第二电极12、设置在基板10上且分别围设在发光二极管20周围的多个挡圈30、以及设置于挡圈30内用以包覆所述发光二极管20的封装层40。
所述基板10呈长方体状，其由可透光的透明材料，如玻璃，蓝宝石等制成。在本实施例中所述基板10具有如下尺寸：长度L：30毫米；宽度W为：0.8毫米；高度H为：0.4毫米。
所述基板10包括一上表面101、一与上表面101相对的下表面102。
所述第一电极11和第二电极12分别固定在基板10的上表面101的两端且与发光二极管20间隔设置。
所述多个发光二极管20固定在基板10的上表面101上且位于第一电极21与第二电极22之间。在本实施例中，所述发光二极管20的数量为两个的时候，所述发光二极管20之间通过串行连接后其引出的两端分别与第一电极21和第二电极22电连接。
可以理解的，在其他实施例中，所述发光二极管20为单个时，所述多个发光二极管20的N电极和P电极直接与基板10的第一电极11和第二电极12电连接。
请同时参考图3，所述挡圈30为疏水性材料制成的一环形结构，所述挡圈30的材料可为光致抗蚀剂。所述挡圈30设置在所述基板10的上表面101将所述发光二极管20围设其中。在本实施例中，所述挡圈30的横截面呈圆形，其高度为H1：100-300微米，最佳高度H1为200微米；厚度W1为：0.05-0.1微米，最佳厚度W1为0.07微米。
所述挡圈30具体包括连接基板10的上表面101的内侧壁31、外侧壁32和连接内侧壁31与外侧壁32的顶壁33。在本实施例中，所述内侧壁31和外侧壁32为为自上表面101垂直向上延伸的圆弧面，顶壁33为与上表面101平行的圆弧面。
所述封装层40由胶体与荧光粉混合而成。所述封装层40设置在基板10的上表面101位于所述挡圈30内侧处且包覆所述发光二极管20。所述封装层40包括一底面41和自底面41边缘朝向内侧壁31处延伸的弧形侧面42。所述底面41呈水平面。在本实施例中，所述弧形侧面42与所述挡圈30的内侧壁31之间夹角为A：30-60度，最佳角度A为45度，所述封装层40的高度为H2：1-3毫米，最佳高度H2为2毫米。所述封装层40关于所述发光二极管20的光轴对称。
本发明还提供上述发光二极管封装结构的制造方法，具体步骤如下：
步骤一：如图4所示，提供一基板10；
所述基板10呈长方体，其由可透光的透明材料制成。基板10包括一上表面101和与上表面101相对的下表面102。所述上表面101两端设置有第一电极11和第二电极12。
步骤二：如图5所示，在基板10的上表面101上设置发光二极管20，并在发光二极管20周围定义出一涂设区域；
步骤三：如图6所示，使用点胶机在所述发光二极管20外围的涂设区域内涂设形成挡圈30；
所述挡圈30为疏水性材料制成的一环形结构。在本实施例中，所述挡圈30的横截面呈圆形，其高度为100-300微米，最佳高度为200微米；厚度为0.05-0.1微米，最佳厚度为0.07微米。
步骤四：如图7所示，在基板10于挡圈30内侧部涂覆封装层40以包覆所述发光二极管20；
在本发明中，通过在所述发光二极管20外围环设挡圈30后，设置封装层40于挡圈30内侧并包覆发光二极管20。所述封装层40成型时，挡圈30的疏水性对封装层40产生斥力而使得封装层40相互聚集后关于发光二极管20的光轴对称，所述发光二极管20产生的光线可均匀激发所述封装层40中荧光粉而产生均匀白光，从而提高发光二极管封装体的出光均匀性。

Claims (10)

1.一种发光二极管封装体，包括基板、设置在基板上表面的第一电极、第二电极及位于第一电极及第二电极之间的发光二极管，其特征在于：还包括由疏水性材料制成的挡圈，所述挡圈固定于所述基板上且围设所述发光二极管于其内，封装层形成在所述挡圈内并包覆所述发光二极管，所述封装层包括一底面及自底面延伸的弧形侧面，所述封装层的弧形侧面贴设所述挡圈的内表面。
2.如权利要求1所述发光二极管封装体，其特征在于：所述挡圈包括与基板上表面连接的内侧壁、外侧壁和连接内侧壁和外侧壁的顶壁。
3.如权利要求2所述发光二极管封装体，其特征在于：所述内侧壁、外侧壁和顶壁均为自基板上表面垂直向上延伸的圆弧面，所述顶壁与所述基板上表面平行。
4.如权利要求2所述发光二极管封装体，其特征在于：所述弧形侧面与挡圈的内侧壁之间呈30-60度的夹角。
5.如权利要求1所述发光二极管封装体，其特征在于：所述挡圈由疏水性材料制成。
6.如权利要求1所述发光二极管封装体，其特征在于：所述挡圈的高度为100-300微米，所述挡圈的厚度为0.05-0.1微米。
7.如权利要求1所述发光二极管封装体，其特征在于：所述基板呈长方体，其由可透光的透明材料制成。
8.如权利要求1所述发光二极管封装体，其特征在于：所述封装层由胶体与荧光粉混合而成。
9.如权利要求1所述发光二极管封装体，其特征在于：所述封装层关于所述发光二极管的光轴对称。
10.一种发光二极管封装体的制造方法，具体步骤如下：
步骤一：提供一基板，所述基板包括一上表面，所述上表面设置第一电极和第二电极；
步骤二：在基板上表面设置发光二极管，并定义出一涂设区域；
步骤三：在发光二极管外围的涂设区域内涂设形成挡圈，所述挡圈将所述发光二极管围设于其中部；
步骤四：在基板于挡圈内侧部涂覆封装层以包覆所述发光二极管。
CN201510074191.0A 2015-02-12 2015-02-12 发光二极管封装体及其制造方法 Pending CN105990492A (zh)

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TW104106453A TW201630215A (zh) 2015-02-12 2015-03-02 發光二極體封裝體及其製造方法
US14/835,954 US9577163B2 (en) 2015-02-12 2015-08-26 Light emitting diode package and method thereof

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CN107170771A (zh) * 2017-05-23 2017-09-15 深圳市华星光电技术有限公司 微发光二极管阵列基板的封装结构及其封装方法
CN111211209A (zh) * 2020-01-16 2020-05-29 江西新正耀光学研究院有限公司 紫外光发光二极管及其制作方法
WO2022246745A1 (zh) * 2021-05-27 2022-12-01 京东方科技集团股份有限公司 背光模组、其制作方法及显示装置

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