JP2015106646A - 半導体装置 - Google Patents
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- 239000004020 conductor Substances 0.000 claims description 5
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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Abstract
【解決手段】実施形態の半導体装置は、基板と、基板上に並べて配置され、各回路ユニットが、第1の電極、第2の電極、第1の電極および第2の電極間に電気的に直列に接続される第1のスイッチング素子と第2のスイッチング素子、第1の電極および第2の電極間に第1のスイッチング素子と第2のスイッチング素子に対し電気的に並列に接続されるコンデンサ、第1のスイッチング素子と第2のスイッチング素子との間に接続される交流電極を有する複数の回路ユニットと、複数の回路ユニットを囲む筐体と、を備え、各回路ユニットの第1の電極に共通の電位が与えられ、各回路ユニットの第2の電極に共通の電位が与えられ、各回路ユニットの交流電極が互いに接続されている。
【選択図】図1
Description
本実施形態の半導体装置は、基板と、基板上に並べて配置され、各回路ユニットが、第1の電極、第2の電極、第1の電極および第2の電極間に電気的に直列に接続される第1のスイッチング素子と第2のスイッチング素子、第1の電極および第2の電極間に第1のスイッチング素子と第2のスイッチング素子に対し電気的に並列に接続されるコンデンサ、第1のスイッチング素子と第2のスイッチング素子との間に接続される交流電極を有する複数の回路ユニットと、複数の回路ユニットを囲む筐体と、を備える。そして、各回路ユニットの第1の電極に共通の電位が与えられ、各回路ユニットの第2の電極に共通の電位が与えられ、各回路ユニットの交流電極が互いに接続されている。
本実施形態の半導体装置は、隣接する回路ユニットの間に、導体の磁気遮蔽板を備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
11a〜d 第1の電極
12a〜d 第2の電極
13 第1のスイッチング素子
13a 第1のゲート電極
14 第2のスイッチング素子
14a 第2のゲート電極
15 コンデンサ
17 絶縁体
20 第2の回路ユニット
23 第1のスイッチング素子
23a 第1のゲート電極
24 第2のスイッチング素子
24a 第2のゲート電極
25 コンデンサ
27 絶縁体
30 第3の回路ユニット
33 第1のスイッチング素子
33a 第1のゲート電極
34 第2のスイッチング素子
34a 第2のゲート電極
35 コンデンサ
37 絶縁体
40 第4の回路ユニット
43 第1のスイッチング素子
43a 第1のゲート電極
44 第2のスイッチング素子
44a 第2のゲート電極
45 コンデンサ
47 絶縁体
50 筐体
70 磁気遮蔽板
80 基板
100 半導体装置
200 半導体装置
Claims (10)
- 基板と、
前記基板上に並べて配置され、各回路ユニットが、第1の電極、第2の電極、前記第1の電極および前記第2の電極間に電気的に直列に接続される第1のスイッチング素子と第2のスイッチング素子、前記第1の電極および前記第2の電極間に前記第1のスイッチング素子と前記第2のスイッチング素子に対し電気的に並列に接続されるコンデンサ、前記第1のスイッチング素子と前記第2のスイッチング素子との間に接続される交流電極を有する複数の回路ユニットと、
前記複数の回路ユニットを囲む筐体と、を備え、
前記各回路ユニットの第1の電極に共通の電位が与えられ、前記各回路ユニットの第2の電極に共通の電位が与えられ、前記各回路ユニットの前記交流電極が互いに接続されていることを特徴とする半導体装置。 - 隣接する前記回路ユニットの間に、導体の磁気遮蔽板を備えることを特徴とする請求項1記載の半導体装置。
- 前記第1のスイッチング素子および前記第2のスイッチング素子が、MOSFETまたはIGBTであることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記筐体が樹脂であることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記磁気遮蔽板が前記筐体の対向する内側面間に連続して設けられることを特徴とする請求項2記載の半導体装置。
- 前記磁気遮蔽板がアルミニウムであることを特徴とする請求項2または請求項5記載の半導体装置。
- 前記基板が導体であることを特徴とする請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記基板が導体であり、前記基板と前記第1のスイッチング素子および前記第2のスイッチング素子との間に絶縁体が設けられることを特徴とする請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記コンデンサが、前記第1のスイッチング素子と前記第2のスイッチング素子に対し、前記基板と反対側に設けられることを特徴とする請求項1ないし請求項8いずれか一項記載の半導体装置。
- 前記回路ユニットが、前記第1のスイッチング素子を制御する第1のゲート電極と、前記第2のスイッチング素子を制御する第2のゲート電極を有することを特徴とする請求項1ないし請求項9いずれか一項記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013248104A JP6406815B2 (ja) | 2013-11-29 | 2013-11-29 | 半導体装置 |
EP14178086.6A EP2881988B1 (en) | 2013-11-29 | 2014-07-22 | Semiconductor device |
TW103125504A TW201521180A (zh) | 2013-11-29 | 2014-07-25 | 半導體裝置 |
KR1020140098980A KR20150062921A (ko) | 2013-11-29 | 2014-08-01 | 반도체 장치 |
CN201410397526.8A CN104681554B (zh) | 2013-11-29 | 2014-08-13 | 半导体装置 |
US14/458,396 US9214459B2 (en) | 2013-11-29 | 2014-08-13 | Semiconductor device |
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JP2013248104A JP6406815B2 (ja) | 2013-11-29 | 2013-11-29 | 半導体装置 |
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JP2015106646A true JP2015106646A (ja) | 2015-06-08 |
JP6406815B2 JP6406815B2 (ja) | 2018-10-17 |
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JP2013248104A Active JP6406815B2 (ja) | 2013-11-29 | 2013-11-29 | 半導体装置 |
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US (1) | US9214459B2 (ja) |
EP (1) | EP2881988B1 (ja) |
JP (1) | JP6406815B2 (ja) |
KR (1) | KR20150062921A (ja) |
CN (1) | CN104681554B (ja) |
TW (1) | TW201521180A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9711498B2 (en) | 2015-03-24 | 2017-07-18 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US9812411B2 (en) | 2015-09-11 | 2017-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, and drive device |
WO2017216837A1 (ja) * | 2016-06-13 | 2017-12-21 | 日産自動車株式会社 | 電力変換装置 |
US9881912B2 (en) | 2015-03-24 | 2018-01-30 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US9950898B2 (en) | 2015-03-24 | 2018-04-24 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
KR20190016902A (ko) | 2017-08-09 | 2019-02-19 | 아사히 가세이 가부시키가이샤 | 변성 공액 디엔계 고무 조성물, 및 타이어 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015173147A (ja) * | 2014-03-11 | 2015-10-01 | 株式会社東芝 | 半導体装置 |
FR3047141B1 (fr) * | 2016-01-25 | 2018-02-02 | Institut De Recherche Technologique Aeronautique Espace Systemes Embarques | Module electronique de puissance compact |
JP6513303B2 (ja) * | 2017-02-06 | 2019-05-15 | 三菱電機株式会社 | 電力用半導体モジュールおよび電力変換装置 |
US10185141B2 (en) * | 2017-06-23 | 2019-01-22 | General Electric Company | Cascaded electrical device bus structure systems and methods |
CN111788769B (zh) * | 2018-02-20 | 2023-12-12 | 三菱电机株式会社 | 电力用半导体模块以及使用该电力用半导体模块的电力变换装置 |
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JPH11356058A (ja) * | 1998-06-10 | 1999-12-24 | Hitachi Ltd | パワー半導体装置およびそれを用いた電力変換装置 |
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US9711498B2 (en) | 2015-03-24 | 2017-07-18 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US9881912B2 (en) | 2015-03-24 | 2018-01-30 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US9950898B2 (en) | 2015-03-24 | 2018-04-24 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
US9812411B2 (en) | 2015-09-11 | 2017-11-07 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, and drive device |
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Also Published As
Publication number | Publication date |
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JP6406815B2 (ja) | 2018-10-17 |
EP2881988A1 (en) | 2015-06-10 |
EP2881988B1 (en) | 2020-07-15 |
KR20150062921A (ko) | 2015-06-08 |
US20150155276A1 (en) | 2015-06-04 |
TW201521180A (zh) | 2015-06-01 |
US9214459B2 (en) | 2015-12-15 |
CN104681554B (zh) | 2017-12-01 |
CN104681554A (zh) | 2015-06-03 |
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