JP2015070007A - 配線基板及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 238000009751 slip forming Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 7
- 239000011800 void material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 256
- 239000010949 copper Substances 0.000 description 64
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 48
- 229910052802 copper Inorganic materials 0.000 description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 238000005086 pumping Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Abstract
Description
[第1の実施の形態に係る配線基板の構造]
まず、第1の実施の形態に係る配線基板の構造について説明する。図1は、第1の実施の形態に係る配線基板を例示する断面図である。図1を参照するに、配線基板1は、基板本体11と、絶縁膜12と、密着層13と、金属層14と、配線層15と、密着層23と、金属層24と、配線層25とを有する。
次に、第1の実施の形態に係る配線基板の製造方法について説明する。図2〜図5は、第1の実施の形態に係る配線基板の製造工程を例示する図である。なお、図2〜図5では、主に貫通孔11xの周辺部分を拡大して例示している。
第2の実施の形態では、基板本体として樹脂を主成分とする基材を用いる例を示す。なお、第2の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する。
11、31 基板本体
11a、31a 基板本体の一方の面
11b、31b 基板本体の他方の面
11x、31x 貫通孔
12 絶縁膜
13、23 密着層
14、24 金属層
15、25 配線層
15a、15b 導電層
15x、15y 凹部
25x 凸部
100 保護膜
110 レジスト層
Claims (10)
- 基板本体と、
前記基板本体の一方の面から他方の面に貫通する貫通孔と、
前記貫通孔内に形成された貫通配線と、を有し、
前記貫通配線は、
前記貫通孔の内側面の前記一方の面側に形成された第1金属層と、
前記第1金属層を被覆して前記貫通孔の前記一方の面側を埋める第1配線層と、
前記貫通孔の内側面の前記他方の面側及び前記第1配線層の前記他方の面側の端部に連続的に形成された第2金属層と、
前記第2金属層を被覆して前記貫通孔の前記他方の面側を埋める第2配線層と、を備え、
前記第1配線層と前記第2配線層とが、前記貫通孔内で前記第2金属層を介して導通している配線基板。 - 前記貫通孔内の前記第1配線層の前記他方の面側の端部には前記他方の面側に開口する凹部が形成され、
前記貫通孔内の前記第2配線層の前記一方の面側の端部には前記一方の面側に突起する凸部が形成され、
前記凸部は前記凹部内に配されている請求項1記載の配線基板。 - 前記基板本体と前記第1金属層との間に第1密着層が形成され、
前記基板本体と前記第2金属層との間、及び、前記第1配線層の前記他方の面側の端部と前記第2金属層との間に第2密着層が形成され、
前記第1配線層と前記第2配線層とは、前記貫通孔内で前記第2密着層及び前記第2金属層を介して導通している請求項1又は2記載の配線基板。 - 前記基板本体の材料はシリコンであり、
前記貫通孔の内側面はシリコン酸化膜で被覆され、
前記第1密着層は、前記第1金属層よりも前記シリコン酸化膜との密着性が良好な材料から構成され、
前記第2密着層は、前記第2金属層よりも前記シリコン酸化膜との密着性が良好な材料から構成されている請求項3記載の配線基板。 - 前記第1配線層は、前記第2配線層の前記一方の面側の端部上に、複数の導電層が積層された構造を有する請求項1乃至4の何れか一項記載の配線基板。
- 前記貫通孔の内側面に形成された前記第1金属層の厚さは、前記一方の面側から前記貫通孔の深い部分にいくにつれて薄くなり、
前記貫通孔の内側面に形成された前記第2金属層の厚さは、前記他方の面側から前記貫通孔の深い部分にいくにつれて薄くなる請求項1乃至5の何れか一項記載の配線基板。 - 基板本体の一方の面から他方の面に貫通する貫通孔を形成する工程と、
前記貫通孔内に貫通配線を形成する工程と、を有し、
前記貫通配線を形成する工程は、
前記貫通孔の内側面の前記一方の面側に第1金属層を形成する工程と、
前記第1金属層を給電層とする電解めっき法により、前記第1金属層を被覆して前記貫通孔の前記一方の面側を埋める第1配線層を形成する工程と、
前記貫通孔の内側面の前記他方の面側及び前記第1配線層の前記他方の面側の端部に連続的に第2金属層を形成する工程と、
前記第2金属層を給電層とする電解めっき法により、前記第2金属層を被覆して前記貫通孔の前記他方の面側を埋める第2配線層を形成する工程と、を備え、
前記第1配線層と前記第2配線層とを、前記貫通孔内で前記第2金属層を介して導通させる配線基板の製造方法。 - 前記第1配線層を形成する工程は、
前記基板本体の一方の面側に、前記貫通孔の前記一方の面側の端部を塞ぐ保護膜を形成する工程と、
前記貫通孔の内側面の前記他方の面側、前記第1金属層、及び前記保護膜の前記貫通孔内に露出する部分を連続的に被覆するレジスト層を形成する工程と、
前記保護膜を除去し、前記レジスト層の一部を前記貫通孔の前記一方の面側の端部から露出させる工程と、
前記レジスト層の前記貫通孔の前記一方の面側の端部から露出する部分上に、前記第1金属層を給電層とする電解めっき法により前記第1配線層の一部となる導電層を形成する工程と、
前記レジスト層を除去した後、前記第1金属層を給電層とする電解めっき法により、前記貫通孔の前記一方の面側を埋めるように、前記第1配線層の一部となる導電層の前記他方の面側に、前記第1配線層の他部となる導電層を形成する工程と、を含む請求項7記載の配線基板の製造方法。 - 前記第1配線層を形成する工程では、コンフォーマルめっきにより、前記貫通孔内の前記第1配線層の他部となる導電層の前記他方の面側の端部に前記他方の面側に開口する凹部を形成し、
前記第2配線層を形成する工程では、前記貫通孔内の前記第2配線層の前記一方の面側の端部に前記一方の面側に突起する凸部を形成し、前記凸部を前記凹部内に配する請求項8記載の配線基板の製造方法。 - 前記第1金属層及び前記第2金属層は、スパッタ法により形成される請求項7乃至9の何れか一項記載の配線基板の製造方法。
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