JP2015050273A - 熱電発電モジュール - Google Patents
熱電発電モジュール Download PDFInfo
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- JP2015050273A JP2015050273A JP2013180061A JP2013180061A JP2015050273A JP 2015050273 A JP2015050273 A JP 2015050273A JP 2013180061 A JP2013180061 A JP 2013180061A JP 2013180061 A JP2013180061 A JP 2013180061A JP 2015050273 A JP2015050273 A JP 2015050273A
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- 238000010248 power generation Methods 0.000 title claims abstract description 85
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 276
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 116
- 229910000679 solder Inorganic materials 0.000 claims abstract description 105
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910052718 tin Inorganic materials 0.000 claims abstract description 18
- 239000011669 selenium Substances 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 13
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 230000036961 partial effect Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 116
- 238000009792 diffusion process Methods 0.000 claims description 62
- 238000007747 plating Methods 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 230000002265 prevention Effects 0.000 claims description 29
- 239000011241 protective layer Substances 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 31
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 21
- 229910000765 intermetallic Inorganic materials 0.000 description 19
- 229910000480 nickel oxide Inorganic materials 0.000 description 15
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Chemically Coating (AREA)
Abstract
【解決手段】この熱電発電モジュールは、ビスマス、テルル、アンチモン、及び、セレンの内の少なくとも2種類の元素を主成分とする熱電材料からなる熱電変換素子と、熱電変換素子の1つの面に順に配置された少なくとも1つの拡散防止層及び半田接合層であって、ニッケルを含有しない少なくとも1つの拡散防止層、及び、ニッケル、錫、又は、それらを主成分とする合金又は化合物からなる半田接合層と、電極と、少なくとも電極の一方の主面に配置され、ニッケルを主成分とする厚さ0.2μm〜3.0μmの膜を含む電極保護層と、電極保護層の一部の領域に半田接合層を接合する半田層とを含む。
【選択図】図9
Description
図1は、本発明の一実施形態に係る熱電発電モジュールの概要を示す斜視図である。熱電発電モジュール1において、P型の半導体熱電材料で形成された熱電変換素子(P型素子)10と、N型の半導体熱電材料で形成された熱電変換素子(N型素子)20とを、電極31又は32を介して電気的に接続することにより、PN素子対が構成される。さらに、複数のPN素子対が、複数の高温側電極31及び複数の低温側電極32を介して直列に接続されている。
熱電発電モジュールの最大出力電力Pは、次式(1)で表される。
P=V2/4R ・・・(1)
ここで、Vは、熱電発電モジュールの開放電圧であり、Rは、熱電発電モジュールの電気抵抗(内部抵抗)である。熱電発電モジュールに接続される負荷が、熱電発電モジュールの内部抵抗と同じ電気抵抗を有する場合に、熱電発電モジュールから最大の電力を取り出すことができる。式(1)から分かるように、熱電発電モジュールの電気抵抗Rに反比例して最大出力電力Pが低下する。従って、熱電発電モジュールの電気抵抗の変化を調査すれば、熱電発電モジュールの劣化の状態を知ることができる。
試験条件2の下で耐久試験が行われた複数の試料について、熱電発電モジュールの断面の観察が行われた。図6は、電極保護層におけるニッケル膜厚の違いによる耐久試験後の熱電発電モジュールの断面の違いを示す図である。
D=D0・exp(−Q0/kT) ・・・(2)
ここで、D0=(1.1±0.05)×10−2cm2/secであり、Q0=0.47±0.02eVである。
Claims (5)
- ビスマス(Bi)、テルル(Te)、アンチモン(Sb)、及び、セレン(Se)の内の少なくとも2種類の元素を主成分とする熱電材料からなる熱電変換素子と、
前記熱電変換素子の1つの面に順に配置された少なくとも1つの拡散防止層及び半田接合層であって、ニッケル(Ni)を含有しない前記少なくとも1つの拡散防止層、及び、ニッケル(Ni)、錫(Sn)、又は、それらを主成分とする合金又は化合物からなる前記半田接合層と、
電極と、
少なくとも前記電極の一方の主面に配置され、ニッケル(Ni)を主成分とする厚さ0.2μm〜3.0μmの膜を含む電極保護層と、
前記電極保護層の一部の領域に前記半田接合層を接合する半田層と、
を具備する熱電発電モジュール。 - 前記電極保護層が、少なくとも前記電極の一方の主面に配置された厚さ0.2μm〜3.0μmのニッケル(Ni)メッキ膜、又は、前記ニッケル(Ni)メッキ膜と金(Au)メッキ膜との積層構造を含む、請求項1記載の熱電発電モジュール。
- 前記ニッケル(Ni)メッキ膜が、燐(P)を含有する、請求項2記載の熱電発電モジュール。
- 前記半田層が、鉛(Pb)及び錫(Sn)を主成分とし、それらの比率がPbxSn(1−x)(x≧0.85)で表される組成を有する半田と、該半田に混入された銅ボールとを含む、請求項1〜3のいずれか1項記載の熱電発電モジュール。
- 前記電極が、銅(Cu)を含む、請求項1〜4のいずれか1項記載の熱電発電モジュール。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013180061A JP6122736B2 (ja) | 2013-08-30 | 2013-08-30 | 熱電発電モジュール |
CN201480047507.0A CN105637661B (zh) | 2013-08-30 | 2014-08-25 | 热电发电模块 |
US14/909,159 US10224472B2 (en) | 2013-08-30 | 2014-08-25 | Thermoelectric power module |
KR1020167004321A KR101809496B1 (ko) | 2013-08-30 | 2014-08-25 | 열전 발전 모듈 |
KR1020177035248A KR101932979B1 (ko) | 2013-08-30 | 2014-08-25 | 열전 발전 모듈 |
PCT/JP2014/072849 WO2015030220A1 (ja) | 2013-08-30 | 2014-08-25 | 熱電発電モジュール |
Applications Claiming Priority (1)
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JP2013180061A JP6122736B2 (ja) | 2013-08-30 | 2013-08-30 | 熱電発電モジュール |
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JP2017074882A Division JP6404983B2 (ja) | 2017-04-05 | 2017-04-05 | 熱電発電モジュール |
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JP2015050273A true JP2015050273A (ja) | 2015-03-16 |
JP6122736B2 JP6122736B2 (ja) | 2017-04-26 |
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Country Status (5)
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US (1) | US10224472B2 (ja) |
JP (1) | JP6122736B2 (ja) |
KR (2) | KR101932979B1 (ja) |
CN (1) | CN105637661B (ja) |
WO (1) | WO2015030220A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017014584A1 (ko) * | 2015-07-21 | 2017-01-26 | 주식회사 엘지화학 | 열전 모듈 및 그 제조 방법 |
JP2017107925A (ja) * | 2015-12-08 | 2017-06-15 | 日立化成株式会社 | 熱電変換モジュールおよびその製造方法 |
WO2017136793A1 (en) * | 2016-02-05 | 2017-08-10 | Alphabet Energy, Inc. | Electrode structure for magnesium silicide-based bulk materials to prevent elemental migration for long term reliability |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US11063197B2 (en) | 2016-03-31 | 2021-07-13 | Sumitomo Chemical Company, Limited | Compound, thermoelectric conversion material, and method for producing compound |
CN108886081B (zh) | 2016-03-31 | 2022-05-13 | 住友化学株式会社 | 化合物及热电转换材料 |
KR102134378B1 (ko) * | 2016-09-27 | 2020-07-15 | 주식회사 엘지화학 | 열전 모듈 및 그 제조 방법 |
JP7315377B2 (ja) * | 2018-10-05 | 2023-07-26 | 株式会社Kelk | 熱電モジュール |
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- 2014-08-25 KR KR1020167004321A patent/KR101809496B1/ko active IP Right Grant
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KR102049011B1 (ko) * | 2015-07-21 | 2019-11-26 | 주식회사 엘지화학 | 열전 모듈 및 그 제조 방법 |
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CN105637661A (zh) | 2016-06-01 |
KR20170140414A (ko) | 2017-12-20 |
WO2015030220A1 (ja) | 2015-03-05 |
KR101809496B1 (ko) | 2017-12-15 |
US20160163944A1 (en) | 2016-06-09 |
US10224472B2 (en) | 2019-03-05 |
KR101932979B1 (ko) | 2018-12-27 |
JP6122736B2 (ja) | 2017-04-26 |
KR20160033758A (ko) | 2016-03-28 |
CN105637661B (zh) | 2018-12-21 |
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