JP5289451B2 - 熱電素子および熱電モジュール - Google Patents
熱電素子および熱電モジュール Download PDFInfo
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- JP5289451B2 JP5289451B2 JP2010526706A JP2010526706A JP5289451B2 JP 5289451 B2 JP5289451 B2 JP 5289451B2 JP 2010526706 A JP2010526706 A JP 2010526706A JP 2010526706 A JP2010526706 A JP 2010526706A JP 5289451 B2 JP5289451 B2 JP 5289451B2
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- Prior art keywords
- thermoelectric
- thermoelectric element
- solder
- chlorine
- input
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000460 chlorine Substances 0.000 claims description 45
- 229910052801 chlorine Inorganic materials 0.000 claims description 44
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 22
- 239000002344 surface layer Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 description 50
- 238000001816 cooling Methods 0.000 description 22
- 238000007747 plating Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 19
- 229910015363 Au—Sn Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000035515 penetration Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910020935 Sn-Sb Inorganic materials 0.000 description 6
- 229910008757 Sn—Sb Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000007788 roughening Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000006104 solid solution Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- 239000002023 wood Substances 0.000 description 4
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- -1 K and K exist Chemical class 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/82—Connection of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
3,4・・・配線導体
5・・・熱電素子
5a・・・N型熱電素子
5b・・・P型熱電素子
5c・・・表面
6・・・金属層
6a・・・半田層
6b・・・メッキ層
8・・・入出力部(塩素が含まれている領域)
10・・・熱電モジュール
Claims (3)
- 熱電材料からなる本体の電力の入出力部の表面層領域に塩素が含まれているとともに、前記塩素は前記本体の端面側で高濃度であって、
前記表面層領域の厚みが10μm以上であることを特徴とする熱電素子。 - 支持基板の表面に形成された配線導体の上に請求項1に記載の熱電素子が複数配列されていることを特徴とする熱電モジュール。
- 前記配線導体の上に、前記入出力部が金属層により接合された前記熱電素子が配列されており、前記金属層に塩素が含まれていることを特徴とする請求項2に記載の熱電モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010526706A JP5289451B2 (ja) | 2008-08-28 | 2009-08-25 | 熱電素子および熱電モジュール |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008219249 | 2008-08-28 | ||
JP2008219249 | 2008-08-28 | ||
PCT/JP2009/064751 WO2010024229A1 (ja) | 2008-08-28 | 2009-08-25 | 熱電素子および熱電モジュール |
JP2010526706A JP5289451B2 (ja) | 2008-08-28 | 2009-08-25 | 熱電素子および熱電モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010024229A1 JPWO2010024229A1 (ja) | 2012-01-26 |
JP5289451B2 true JP5289451B2 (ja) | 2013-09-11 |
Family
ID=41721397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010526706A Active JP5289451B2 (ja) | 2008-08-28 | 2009-08-25 | 熱電素子および熱電モジュール |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5289451B2 (ja) |
WO (1) | WO2010024229A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113285009A (zh) * | 2021-05-26 | 2021-08-20 | 杭州大和热磁电子有限公司 | 一种通过沉积金锡焊料组装的tec及制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321919A (ja) * | 1997-03-18 | 1998-12-04 | Yamaha Corp | Ni合金皮膜を有する熱電材料 |
JPH11233834A (ja) * | 1998-02-12 | 1999-08-27 | Mitsui Mining & Smelting Co Ltd | 熱電変換素子及びその製造方法 |
JP2001196646A (ja) * | 2000-01-17 | 2001-07-19 | Aisin Seiki Co Ltd | 熱電デバイス |
JP2004031696A (ja) * | 2002-06-26 | 2004-01-29 | Kyocera Corp | 熱電モジュール及びその製造方法 |
JP2006287259A (ja) * | 2006-06-26 | 2006-10-19 | Kyocera Corp | 熱電モジュール |
JP2007088239A (ja) * | 2005-09-22 | 2007-04-05 | Ube Ind Ltd | 熱電変換材料及びその製造方法 |
-
2009
- 2009-08-25 WO PCT/JP2009/064751 patent/WO2010024229A1/ja active Application Filing
- 2009-08-25 JP JP2010526706A patent/JP5289451B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321919A (ja) * | 1997-03-18 | 1998-12-04 | Yamaha Corp | Ni合金皮膜を有する熱電材料 |
JPH11233834A (ja) * | 1998-02-12 | 1999-08-27 | Mitsui Mining & Smelting Co Ltd | 熱電変換素子及びその製造方法 |
JP2001196646A (ja) * | 2000-01-17 | 2001-07-19 | Aisin Seiki Co Ltd | 熱電デバイス |
JP2004031696A (ja) * | 2002-06-26 | 2004-01-29 | Kyocera Corp | 熱電モジュール及びその製造方法 |
JP2007088239A (ja) * | 2005-09-22 | 2007-04-05 | Ube Ind Ltd | 熱電変換材料及びその製造方法 |
JP2006287259A (ja) * | 2006-06-26 | 2006-10-19 | Kyocera Corp | 熱電モジュール |
Also Published As
Publication number | Publication date |
---|---|
JPWO2010024229A1 (ja) | 2012-01-26 |
WO2010024229A1 (ja) | 2010-03-04 |
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