JP2015036819A - 薄膜トランジスタ表示板 - Google Patents
薄膜トランジスタ表示板 Download PDFInfo
- Publication number
- JP2015036819A JP2015036819A JP2014161986A JP2014161986A JP2015036819A JP 2015036819 A JP2015036819 A JP 2015036819A JP 2014161986 A JP2014161986 A JP 2014161986A JP 2014161986 A JP2014161986 A JP 2014161986A JP 2015036819 A JP2015036819 A JP 2015036819A
- Authority
- JP
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- Prior art keywords
- shorting bar
- data line
- thin film
- film transistor
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000010408 film Substances 0.000 claims description 65
- 230000001681 protective effect Effects 0.000 claims description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 230000005611 electricity Effects 0.000 abstract description 20
- 230000003068 static effect Effects 0.000 abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- 239000010410 layer Substances 0.000 description 25
- 238000005530 etching Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
110 絶縁基板
121 ゲート線
124 ゲート電極
129 ゲートパッド
140 ゲート絶縁膜
154 半導体層
159 ショーティングバー
159−1 島状のショーティングバー
159' 半導体物質
171 データ線
171' データ線用物質
173 ソース電極
175 ドレイン電極
177 リペア部
178 OSパッド部
179 データパッド
180、185 保護膜
186、189 コンタクトホール
191、191−1 画素電極
270 共通電極
280−1、280−'1 フォトレジスト
300 表示領域
310 液晶分子
380 シール部材
Claims (9)
- ゲート線と、
前記ゲート線と絶縁交差するデータ線と、
前記ゲート線と前記データ線が交差して画像を表示する表示領域の外側に位置し、前記表示領域の外側まで延長されている前記データ線と重なる、分離されたショーティングバーと、を含み、
前記分離されたショーティングバーは半導体物質を含む、薄膜トランジスタ表示板。 - 前記ショーティングバーは横方向に長く形成される、請求項1に記載の薄膜トランジスタ表示板。
- 隣接する前記データ線の間に位置する島状のショーティングバーをさらに含む、請求項2に記載の薄膜トランジスタ表示板。
- 前記ショーティングバーはシール部材と重なる、請求項1に記載の薄膜トランジスタ表示板。
- 前記ショーティングバーと前記表示領域との間にはOSパッド部を配置する、請求項1に記載の薄膜トランジスタ表示板。
- 前記データ線及び前記分離されたショーティングバーを覆い、コンタクトホールを含む保護膜をさらに含み、
前記コンタクトホールの内側面は前記ショーティングバーの切断面と一致する、請求項1に記載の薄膜トランジスタ表示板。 - 前記表示領域には共通電極と画素電極が形成される、請求項6に記載の薄膜トランジスタ表示板。
- 前記保護膜は第1保護膜と第2保護膜を含み、
前記共通電極は前記第1保護膜と前記第2保護膜との間に位置し、前記画素電極は前記第2保護膜の上に形成されており、
前記コンタクトホールは前記第1保護膜と前記第2保護膜を通じて形成される、請求項7に記載の薄膜トランジスタ表示板。 - 前記ショーティングバーを構成する前記半導体物質は、非晶質シリコンまたはIGZOのような酸化物半導体である、請求項1に記載の薄膜トランジスタ表示板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130096654A KR102106006B1 (ko) | 2013-08-14 | 2013-08-14 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR10-2013-0096654 | 2013-08-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015036819A true JP2015036819A (ja) | 2015-02-23 |
JP6472619B2 JP6472619B2 (ja) | 2019-02-20 |
Family
ID=52466599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014161986A Expired - Fee Related JP6472619B2 (ja) | 2013-08-14 | 2014-08-08 | 薄膜トランジスタ表示板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9823531B2 (ja) |
JP (1) | JP6472619B2 (ja) |
KR (1) | KR102106006B1 (ja) |
CN (1) | CN104377206B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112505974A (zh) * | 2020-12-10 | 2021-03-16 | 滁州惠科光电科技有限公司 | 一种走线结构及液晶显示面板 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102228900B1 (ko) | 2014-07-25 | 2021-03-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
CN104716146B (zh) * | 2015-03-30 | 2018-06-15 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
KR102315889B1 (ko) * | 2015-04-14 | 2021-10-21 | 삼성디스플레이 주식회사 | 표시 패널 |
WO2017170219A1 (ja) * | 2016-03-31 | 2017-10-05 | シャープ株式会社 | アクティブマトリクス基板、その製造方法および表示装置 |
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JPH06258668A (ja) * | 1993-03-05 | 1994-09-16 | Toshiba Corp | マトリクスアレイ基板とその製造方法およびそれを用いた液晶表示装置 |
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JPH11509938A (ja) * | 1995-07-31 | 1999-08-31 | リットン システムズ カナダ リミテッド | 静電放電防止回路付き半導体スイッチアレイおよび製造方法 |
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JP2001255558A (ja) * | 2000-03-13 | 2001-09-21 | Seiko Epson Corp | 半導体装置、電気光学装置用基板、液晶装置用基板とその製造方法、及び液晶装置、並びにこれを用いた投射型液晶表示装置および電子機器 |
JP2008107807A (ja) * | 2006-09-29 | 2008-05-08 | Semiconductor Energy Lab Co Ltd | 液晶表示装置および電子機器 |
JP2010055100A (ja) * | 2004-06-29 | 2010-03-11 | Lg Display Co Ltd | 画素領域外郭部の光漏れを防止するcot構造液晶表示装置及びその製造方法 |
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-
2013
- 2013-08-14 KR KR1020130096654A patent/KR102106006B1/ko active IP Right Grant
-
2014
- 2014-05-14 US US14/277,526 patent/US9823531B2/en active Active
- 2014-08-08 JP JP2014161986A patent/JP6472619B2/ja not_active Expired - Fee Related
- 2014-08-11 CN CN201410392255.7A patent/CN104377206B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06258668A (ja) * | 1993-03-05 | 1994-09-16 | Toshiba Corp | マトリクスアレイ基板とその製造方法およびそれを用いた液晶表示装置 |
JPH11509938A (ja) * | 1995-07-31 | 1999-08-31 | リットン システムズ カナダ リミテッド | 静電放電防止回路付き半導体スイッチアレイおよび製造方法 |
JPH09325355A (ja) * | 1996-06-03 | 1997-12-16 | Sharp Corp | 表示素子の製造方法 |
JP2001133807A (ja) * | 1999-10-29 | 2001-05-18 | Fujitsu Ltd | 薄膜トランジスタ、液晶表示装置、およびその製造方法 |
JP2001255558A (ja) * | 2000-03-13 | 2001-09-21 | Seiko Epson Corp | 半導体装置、電気光学装置用基板、液晶装置用基板とその製造方法、及び液晶装置、並びにこれを用いた投射型液晶表示装置および電子機器 |
JP2010055100A (ja) * | 2004-06-29 | 2010-03-11 | Lg Display Co Ltd | 画素領域外郭部の光漏れを防止するcot構造液晶表示装置及びその製造方法 |
JP2008107807A (ja) * | 2006-09-29 | 2008-05-08 | Semiconductor Energy Lab Co Ltd | 液晶表示装置および電子機器 |
US20130194224A1 (en) * | 2012-01-27 | 2013-08-01 | Research In Motion Limited | Electronic device with capacitive touch-sensitive display |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112505974A (zh) * | 2020-12-10 | 2021-03-16 | 滁州惠科光电科技有限公司 | 一种走线结构及液晶显示面板 |
CN112505974B (zh) * | 2020-12-10 | 2022-07-22 | 滁州惠科光电科技有限公司 | 一种走线结构及液晶显示面板 |
Also Published As
Publication number | Publication date |
---|---|
KR20150019593A (ko) | 2015-02-25 |
US20150049276A1 (en) | 2015-02-19 |
CN104377206A (zh) | 2015-02-25 |
JP6472619B2 (ja) | 2019-02-20 |
US9823531B2 (en) | 2017-11-21 |
KR102106006B1 (ko) | 2020-05-04 |
CN104377206B (zh) | 2019-07-30 |
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