JP2014523649A5 - - Google Patents
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- Publication number
- JP2014523649A5 JP2014523649A5 JP2014519290A JP2014519290A JP2014523649A5 JP 2014523649 A5 JP2014523649 A5 JP 2014523649A5 JP 2014519290 A JP2014519290 A JP 2014519290A JP 2014519290 A JP2014519290 A JP 2014519290A JP 2014523649 A5 JP2014523649 A5 JP 2014523649A5
- Authority
- JP
- Japan
- Prior art keywords
- snubber
- forming
- capacitor
- resistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims 48
- 239000000758 substrate Substances 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 10
- 210000000746 body region Anatomy 0.000 claims 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 2
- 229910021334 nickel silicide Inorganic materials 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 2
- 229910018487 Ni—Cr Inorganic materials 0.000 claims 1
- 239000011195 cermet Substances 0.000 claims 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161504624P | 2011-07-05 | 2011-07-05 | |
| US61/504,624 | 2011-07-05 | ||
| US13/540,813 US8796745B2 (en) | 2011-07-05 | 2012-07-03 | Monolithically integrated active snubber |
| US13/540,813 | 2012-07-03 | ||
| PCT/US2012/045554 WO2013006699A2 (en) | 2011-07-05 | 2012-07-05 | Monolithically integrated active snubber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014523649A JP2014523649A (ja) | 2014-09-11 |
| JP2014523649A5 true JP2014523649A5 (enExample) | 2015-08-20 |
| JP6101688B2 JP6101688B2 (ja) | 2017-03-22 |
Family
ID=47437691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014519290A Active JP6101688B2 (ja) | 2011-07-05 | 2012-07-05 | モノリシックに集積されたアクティブスナバ |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8796745B2 (enExample) |
| JP (1) | JP6101688B2 (enExample) |
| CN (1) | CN103782387B (enExample) |
| WO (1) | WO2013006699A2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9362398B2 (en) * | 2010-10-26 | 2016-06-07 | Texas Instruments Incorporated | Low resistance LDMOS with reduced gate charge |
| JP5616823B2 (ja) * | 2011-03-08 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
| US8859386B2 (en) * | 2012-06-08 | 2014-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices, methods of manufacture thereof, and methods of forming resistors |
| US9230957B2 (en) | 2013-03-11 | 2016-01-05 | Alpha And Omega Semiconductor Incorporated | Integrated snubber in a single poly MOSFET |
| US8890223B1 (en) * | 2013-08-06 | 2014-11-18 | Texas Instruments Incorporated | High voltage hybrid polymeric-ceramic dielectric capacitor |
| US9461037B2 (en) * | 2014-02-06 | 2016-10-04 | Peregrine Semiconductor Corporation | Reduced generation of second harmonics of FETs |
| US9590057B2 (en) * | 2014-04-02 | 2017-03-07 | International Business Machines Corporation | Reduced parasitic capacitance with slotted contact |
| US9373712B2 (en) * | 2014-09-29 | 2016-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor and method of manufacturing the same |
| US9633996B1 (en) | 2016-03-25 | 2017-04-25 | Qualcomm Incorporated | High density area efficient thin-oxide decoupling capacitor using conductive gate resistor |
| JP6783708B2 (ja) * | 2017-06-15 | 2020-11-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US10475725B2 (en) * | 2017-11-08 | 2019-11-12 | Texas Instruments Incorporated | Structure to enable higher current density in integrated circuit resistor |
| JP7117260B2 (ja) * | 2019-03-18 | 2022-08-12 | ルネサスエレクトロニクス株式会社 | 半導体装置とその製造方法 |
| WO2021022150A1 (en) * | 2019-07-31 | 2021-02-04 | Nootens Stephen P | Aluminum nitride multilayer power module interposer and method |
| US11049853B2 (en) | 2019-10-04 | 2021-06-29 | Texas Instruments Incorporated | ESD protection device with breakdown voltage stabilization |
| US11011510B2 (en) | 2019-10-04 | 2021-05-18 | Texas Instruments Incorporated | Breakdown uniformity for ESD protection device |
| US11876118B2 (en) * | 2020-02-14 | 2024-01-16 | Vanguard International Semiconductor Corporation | Semiconductor structure with gate metal layer |
| JP7401416B2 (ja) | 2020-09-11 | 2023-12-19 | 株式会社東芝 | 半導体装置 |
| JP6999776B2 (ja) * | 2020-10-21 | 2022-01-19 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US11664436B2 (en) * | 2021-03-01 | 2023-05-30 | Wolfspeed, Inc. | Semiconductor devices having gate resistors with low variation in resistance values |
| US12034033B2 (en) * | 2022-01-25 | 2024-07-09 | Ge Aviation Systems Llc | Semiconductor device package and method of forming |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137256A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 絶縁ゲ−ト半導体装置 |
| JPH0514156A (ja) * | 1991-07-04 | 1993-01-22 | Toyota Autom Loom Works Ltd | 半導体集積回路装置 |
| KR100289049B1 (ko) * | 1997-12-17 | 2001-10-24 | 정선종 | 이중필드판구조를갖는전력소자 |
| JP4088063B2 (ja) * | 2001-11-14 | 2008-05-21 | 株式会社東芝 | パワーｍｏｓｆｅｔ装置 |
| JP2003203923A (ja) * | 2002-01-10 | 2003-07-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2004221344A (ja) * | 2003-01-15 | 2004-08-05 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US7420247B2 (en) * | 2005-08-12 | 2008-09-02 | Cicion Semiconductor Device Corp. | Power LDMOS transistor |
| DE102006017487A1 (de) * | 2006-04-13 | 2007-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Integriertes Beschaltungsbauelement auf Halbleiterbasis zur Schaltentlastung, Spannungsbegrenzung bzw. Schwingungsdämpfung |
| US7382030B1 (en) * | 2006-07-25 | 2008-06-03 | Rf Micro Devices, Inc. | Integrated metal shield for a field effect transistor |
| JP2008085117A (ja) * | 2006-09-28 | 2008-04-10 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US8829624B2 (en) * | 2008-06-30 | 2014-09-09 | Fairchild Semiconductor Corporation | Power device with monolithically integrated RC snubber |
| JP4602465B2 (ja) * | 2008-12-04 | 2010-12-22 | 株式会社東芝 | 半導体装置 |
| JP5577607B2 (ja) | 2009-03-05 | 2014-08-27 | 日産自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2011009352A (ja) | 2009-06-24 | 2011-01-13 | Renesas Electronics Corp | 半導体装置およびその製造方法ならびにそれを用いた電源装置 |
-
2012
- 2012-07-03 US US13/540,813 patent/US8796745B2/en active Active
- 2012-07-05 JP JP2014519290A patent/JP6101688B2/ja active Active
- 2012-07-05 CN CN201280043011.7A patent/CN103782387B/zh active Active
- 2012-07-05 WO PCT/US2012/045554 patent/WO2013006699A2/en not_active Ceased
-
2014
- 2014-06-26 US US14/315,701 patent/US9385216B2/en active Active
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