JP2020520091A - 半導体電力変換デバイス用の集積ゲートレジスタ - Google Patents
半導体電力変換デバイス用の集積ゲートレジスタ Download PDFInfo
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Abstract
Description
更に、集積レジスタR1,R2はそれぞれ、約1μm以上のそれぞれの最小幅134A,134Bを有するそれぞれのレジスタセグメント170A,170Bを含む。図12及び図14に示されるように、特定の実施形態において、図15に示されるゲートパッド16の集積レジスタR1,R2は、図12及び図14に示されるように、それぞれが少なくとも1μmの最小幅172を有する複数の並列レジスタセグメント170を使用して代わりに実装されてもよい。図16は、図15に示されるデバイス12の実施形態に関してR2及びR1の抵抗の比に対するエリアA1,A2内に(任意の単位で)位置されるデバイスセル22間の伝搬遅延の差を示すプロット200である。図示の実施形態に関し、曲線202によって示されるように、伝播遅延の最小差は、R1に対するR2の抵抗の比が約3〜約7(例えば、約4〜6又は約5)であるときに生じる。
Claims (29)
- 半導体電力変換デバイスであって、
アクティブエリアであって、該アクティブエリアの異なる部分に配置される複数のデバイスセルを備え、前記複数のデバイスセルのそれぞれがそれぞれのゲート電極を含む、アクティブエリアと、
ゲートパッド・バスエリアであって、
複数の集積レジスタを有する集積レジスタネットワークに隣接して配置されるゲート金属接触領域を含むゲートパッドと、
前記ゲートパッドと前記デバイスの前記アクティブエリアの第1の部分における前記複数のゲート電極の第1の部分との間で延在する第1のゲートバスと、
前記ゲートパッドの前記ゲート金属接触領域を直接に覆うように配置されて外部ゲート接続部に結合されるゲートパッド金属と、
を備え、前記複数のゲート電極の前記第1の部分は、前記複数の集積レジスタのうちの第1の集積レジスタ、前記第1のゲートバス、前記ゲート金属接触領域、及び、前記ゲートパッド金属を介して前記外部ゲート接続部に電気的に接続され、前記デバイスの前記アクティブエリアの第2の部分における前記複数のゲート電極の第2の部分は、前記複数の集積レジスタのうちの第2の集積レジスタ、前記ゲート金属接触領域、及び、前記ゲートパッド金属を介して前記外部ゲート接続部に電気的に接続され、前記第1及び第2の集積レジスタが実質的に異なるそれぞれの抵抗値を有する、ゲートパッド・バスエリアと、
を備える、半導体電力変換デバイス。 - 前記ゲートパッド・バスエリアが第2のゲートバスを備え、前記複数のゲート電極の第3の部分が、前記複数の集積レジスタのうちの第3の集積レジスタと前記第2のゲートバスとを介して前記外部ゲート接続部に電気的に接続される、請求項1に記載のデバイス。
- 前記集積レジスタネットワーク内の前記複数の集積レジスタのそれぞれの各抵抗が異なる、請求項1に記載のデバイス。
- 前記集積レジスタネットワークに含まれる前記複数の集積レジスタのそれぞれの抵抗のうちの少なくとも2つが同じである、請求項1に記載のデバイス。
- 前記複数の集積レジスタのそれぞれは、1マイクロメートル(μm)以上の最小幅を有する少なくとも1つのそれぞれのレジスタセグメントを備える、請求項1に記載のデバイス。
- 前記複数の集積レジスタのうちの少なくとも1つが、1マイクロメートル(μm)以上の最小幅を有する複数のそれぞれのレジスタセグメントを備える、請求項5に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗と第1のエリアとの乗算積は、前記第2の集積レジスタのそれぞれの抵抗と第2のエリアとの乗算積にほぼ等しい、請求項1に記載のデバイス。
- 前記半導体電力変換デバイスの全ゲート等価直列抵抗(Rg)が約1オーム〜約80オームである、請求項1に記載のデバイス。
- 前記半導体電力変換デバイスのRgが約3オーム〜約20オームである、請求項8に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗に対する前記第2の集積レジスタのそれぞれの抵抗の比は、約1:1よりも大きく、約15:1より小さい、請求項1に記載のデバイス。
- 前記ゲートレジスタ層のシート抵抗が2オーム/スクエア(ohm/square)〜50ohm/squareである、請求項1に記載のデバイス。
- 前記ゲートレジスタ層のシート抵抗は、前記デバイスのアクティブセルエリア内の前記複数のデバイスセルの各それぞれのゲート電極のシート抵抗とほぼ同じである、請求項11に記載のデバイス。
- 前記集積レジスタネットワークの前記複数の集積レジスタは、前記半導体デバイスの第3のエリアに対応する第3の複数のゲート電極に電気的に接続される第3の集積レジスタを備え、前記第3の集積レジスタのそれぞれの抵抗と第3のエリアとの乗算積は、前記第1の集積レジスタのそれぞれの抵抗と前記第1のエリアとの乗算積にほぼ等しいとともに、前記第2の集積レジスタのそれぞれの抵抗と前記第2のエリアとの乗算積にもほぼ等しい、請求項1に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗に対する前記第2の集積レジスタのそれぞれの抵抗に対する前記第3の集積レジスタのそれぞれの抵抗の比が約20:15:1である、請求項13に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗に対する前記第2の集積レジスタのそれぞれの抵抗の比、並びに、前記第1の集積レジスタのそれぞれの抵抗に対する前記第3の集積レジスタのそれぞれの抵抗の比は、約7.5:1〜25:1である、請求項13に記載のデバイス。
- 前記集積レジスタネットワークの前記複数の集積レジスタは、前記半導体デバイスの第4のエリアに対応する第4の複数のゲート電極に電気的に結合される第4の集積レジスタを備え、前記第4の集積レジスタのそれぞれの抵抗と第4のエリアとの乗算積は、前記第1の集積レジスタのそれぞれの抵抗と前記第1のエリアとの乗算積にほぼ等しい、請求項13に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗に対する前記第2、第3、及び、第4の集積レジスタのそれぞれの抵抗の各比が約5:1よりも大きい、請求項16に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗は、Rg/2よりも大きく、Rgよりも小さい、請求項16に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗が約2オーム〜ら約10オームであり、前記第2の集積レジスタのそれぞれの抵抗が約30オーム〜約150オームであり、前記第3の集積レジスタのそれぞれの抵抗が約30オーム〜約150オームであり、第4の集積レジスタのそれぞれの抵抗が約80オーム〜約400オームである、請求項16に記載のデバイス。
- 前記第1のエリアが前記第3のエリアにほぼ等しく、前記第1の集積レジスタのそれぞれの抵抗が前記第3の集積レジスタのそれぞれの抵抗にほぼ等しく、前記第2のエリアが前記第4のエリアにほぼ等しく、前記第2の集積レジスタのそれぞれの抵抗が前記第4の集積レジスタのそれぞれの抵抗にほぼ等しく、前記第2の集積センサのそれぞれの抵抗と前記第1の集積レジスタのそれぞれの抵抗との比が約2:1〜10:1である、請求項16に記載のデバイス。
- 前記第2の集積レジスタのそれぞれの抵抗と前記第1の集積レジスタのそれぞれの抵抗との比が約4:1〜8:1である、請求項16に記載のデバイス。
- 前記第1の集積レジスタのそれぞれの抵抗がRgの1/2よりも大きい、請求項16に記載のデバイス。
- 前記半導体電力変換デバイスが炭化ケイ素(SiC)電力変換デバイスであり、前記複数のデバイスセルが複数のMOSFETデバイスセルである、請求項1に記載のデバイス。
- 全ゲート等価直列抵抗(Rg)の対応する第1の部分の前記第1の集積レジスタのそれぞれのレジスタの値の和は、前記全ゲート等価直列抵抗(Rg)の対応する第2の部分の前記第2の集積レジスタのそれぞれのレジスタの値の和にほぼ等しい、請求項1に記載のデバイス。
- 半導体電力変換デバイスのアクティブエリア内に複数のデバイスセルの複数のゲート電極を形成しつつ、前記半導体電力変換デバイスのゲートパッド・バスエリアにゲートパッドを形成するステップを含み、前記ゲートパッドは、集積レジスタネットワークに隣接して配置されるゲート金属接触を備え、前記集積レジスタネットワークの第1の部分は、第1の集積レジスタを含むとともに、前記ゲート金属接触領域と前記複数のゲート電極の第1の部分との間に第1の抵抗を与え、前記集積レジスタネットワークの第2の部分は、第2の集積レジスタを含むとともに、前記ゲート金属接触領域と前記複数のゲート電極の第2の部分との間に第2の抵抗を与え、前記第1及び第2の抵抗が実質的に異なる、方法。
- 前記ゲートパッドを形成する前記ステップは、
前記半導体電力変換デバイスの前記ゲートパッド・バスエリア内のゲートパッド領域を覆うように低インピーダンスゲート材料層を堆積させるステップであって、前記低抵抗ゲート材料層が25℃で約3オーム/スクエア(ohm/square)〜約6ohm/squareのシート抵抗を有し、前記低抵抗ゲート材料層が前記ゲートパッドのゲート金属接触エリアを形成するステップと、
前記集積レジスタネットワークの前記第1及び第2の集積レジスタのそれぞれの1つ以上のレジスタセグメントを形成するために前記低抵抗ゲート材料層の一部分を選択的にエッチングするステップと、
を含む、請求項25に記載の方法。 - 複数のストライプ状デバイスセルのそれぞれごとに半導体電力変換デバイスの表面に隣接するボディ/ソース接触領域、チャネル領域、及び、ソース領域を備える前記複数のゲート電極を形成する前に前記半導体電力変換デバイスの半導体電力変換デバイスのアクティブエリアを製造するステップを含む、請求項25に記載の方法。
- 前記複数のゲート電極を形成する前に、前記アクティブエリア内で、前記半導体電力変換デバイスの表面にゲート誘電体を形成するステップと、
前記ゲートパッドを形成する前に、前記ゲートパッド・バスエリアで、前記半導体電力変換デバイスの表面にフィールド酸化物層を形成するステップと、
前記アクティブエリア内の前記複数のゲート電極を直接に覆うように且つ前記半導体電力変換デバイスの前記ゲートパッド・バスエリア内の前記ゲートパッドの前記集積レジスタを直接に覆うように前記半導体電力変換デバイスの表面上にわたって層間誘電体(ILD)を形成するステップと、
前記半導体電力変換デバイスの表面に配置される前記ゲート誘電体、前記ILD、又は、その両方の一部分を選択的に除去して、前記ゲートパッド・バスエリアにゲートビア及びバスビアを形成するとともに、前記アクティブエリア内の前記半導体電力変換デバイスの表面にある前記複数のデバイスセルのボディ/ソース接触領域を露出させるステップと、
前記半導体電力変換デバイスの前記アクティブエリア内の前記複数のデバイスセルの前記ボディ/ソース接触領域を直接に覆うようにソース金属を堆積させ、並びに、前記ゲートパッドの前記ゲートビア中にゲートパッド金属を堆積させるとともに、前記半導体電力変換デバイスの前記ゲートパッド・バスエリア内の前記バスビア中にゲートバス金属を堆積させるステップと、
を含む請求項25に記載の方法。 - 半導体電力変換デバイスにおいて、
アクティブエリアであって、該アクティブエリアの異なる部分に配置される複数のデバイスセルを備え、前記複数のデバイスセルのそれぞれがそれぞれのゲート電極を含む、アクティブエリアと、
ゲートパッド・バスエリアであって、
集積レジスタネットワークに隣接して配置されるゲート金属接触領域を含むゲートパッドと、
前記ゲートパッドと前記デバイスの前記アクティブエリアの第1の部分における複数のゲート電極の第1の部分との間で延在する第1のゲートバスと、
を備え、前記複数のゲート電極の前記第1の部分は、前記集積レジスタネットワークの第1の部分と前記第1のゲートバスとを介して前記ゲート金属接触領域に電気的に接続され、前記デバイスの前記アクティブエリアの第2の部分における前記複数のゲート電極の第2の部分は、前記集積レジスタネットワークの第2の部分を介して前記ゲート金属接触領域に電気的に接続され、前記集積レジスタネットワークの前記第1の部分の抵抗値が前記集積レジスタネットワークの前記第2の部分の抵抗値と実質的に異なる、ゲートパッド・バスエリアと、
を備える、半導体電力変換デバイス。
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