CN103782387B - 单片集成有源缓冲器 - Google Patents

单片集成有源缓冲器 Download PDF

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Publication number
CN103782387B
CN103782387B CN201280043011.7A CN201280043011A CN103782387B CN 103782387 B CN103782387 B CN 103782387B CN 201280043011 A CN201280043011 A CN 201280043011A CN 103782387 B CN103782387 B CN 103782387B
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region
snubber
buffer
drain
drift region
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CN201280043011.7A
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Chinese (zh)
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CN103782387A (zh
Inventor
C·B·科措
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201280043011.7A 2011-07-05 2012-07-05 单片集成有源缓冲器 Active CN103782387B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161504624P 2011-07-05 2011-07-05
US61/504,624 2011-07-05
US13/540,813 US8796745B2 (en) 2011-07-05 2012-07-03 Monolithically integrated active snubber
US13/540,813 2012-07-03
PCT/US2012/045554 WO2013006699A2 (en) 2011-07-05 2012-07-05 Monolithically integrated active snubber

Publications (2)

Publication Number Publication Date
CN103782387A CN103782387A (zh) 2014-05-07
CN103782387B true CN103782387B (zh) 2017-06-06

Family

ID=47437691

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280043011.7A Active CN103782387B (zh) 2011-07-05 2012-07-05 单片集成有源缓冲器

Country Status (4)

Country Link
US (2) US8796745B2 (enExample)
JP (1) JP6101688B2 (enExample)
CN (1) CN103782387B (enExample)
WO (1) WO2013006699A2 (enExample)

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US9362398B2 (en) * 2010-10-26 2016-06-07 Texas Instruments Incorporated Low resistance LDMOS with reduced gate charge
JP5616823B2 (ja) * 2011-03-08 2014-10-29 セイコーインスツル株式会社 半導体装置およびその製造方法
US8859386B2 (en) * 2012-06-08 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and methods of forming resistors
US9230957B2 (en) 2013-03-11 2016-01-05 Alpha And Omega Semiconductor Incorporated Integrated snubber in a single poly MOSFET
US8890223B1 (en) * 2013-08-06 2014-11-18 Texas Instruments Incorporated High voltage hybrid polymeric-ceramic dielectric capacitor
US9461037B2 (en) * 2014-02-06 2016-10-04 Peregrine Semiconductor Corporation Reduced generation of second harmonics of FETs
US9590057B2 (en) * 2014-04-02 2017-03-07 International Business Machines Corporation Reduced parasitic capacitance with slotted contact
US9373712B2 (en) * 2014-09-29 2016-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor and method of manufacturing the same
US9633996B1 (en) 2016-03-25 2017-04-25 Qualcomm Incorporated High density area efficient thin-oxide decoupling capacitor using conductive gate resistor
JP6783708B2 (ja) * 2017-06-15 2020-11-11 ルネサスエレクトロニクス株式会社 半導体装置
US10475725B2 (en) * 2017-11-08 2019-11-12 Texas Instruments Incorporated Structure to enable higher current density in integrated circuit resistor
JP7117260B2 (ja) * 2019-03-18 2022-08-12 ルネサスエレクトロニクス株式会社 半導体装置とその製造方法
WO2021022150A1 (en) * 2019-07-31 2021-02-04 Nootens Stephen P Aluminum nitride multilayer power module interposer and method
US11049853B2 (en) 2019-10-04 2021-06-29 Texas Instruments Incorporated ESD protection device with breakdown voltage stabilization
US11011510B2 (en) 2019-10-04 2021-05-18 Texas Instruments Incorporated Breakdown uniformity for ESD protection device
US11876118B2 (en) * 2020-02-14 2024-01-16 Vanguard International Semiconductor Corporation Semiconductor structure with gate metal layer
JP7401416B2 (ja) 2020-09-11 2023-12-19 株式会社東芝 半導体装置
JP6999776B2 (ja) * 2020-10-21 2022-01-19 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US11664436B2 (en) * 2021-03-01 2023-05-30 Wolfspeed, Inc. Semiconductor devices having gate resistors with low variation in resistance values
US12034033B2 (en) * 2022-01-25 2024-07-09 Ge Aviation Systems Llc Semiconductor device package and method of forming

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JPS58137256A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 絶縁ゲ−ト半導体装置
JPH0514156A (ja) * 1991-07-04 1993-01-22 Toyota Autom Loom Works Ltd 半導体集積回路装置
KR100289049B1 (ko) * 1997-12-17 2001-10-24 정선종 이중필드판구조를갖는전력소자
JP4088063B2 (ja) * 2001-11-14 2008-05-21 株式会社東芝 パワーｍｏｓｆｅｔ装置
JP2003203923A (ja) * 2002-01-10 2003-07-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2004221344A (ja) * 2003-01-15 2004-08-05 Renesas Technology Corp 半導体装置およびその製造方法
US7420247B2 (en) * 2005-08-12 2008-09-02 Cicion Semiconductor Device Corp. Power LDMOS transistor
DE102006017487A1 (de) * 2006-04-13 2007-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Integriertes Beschaltungsbauelement auf Halbleiterbasis zur Schaltentlastung, Spannungsbegrenzung bzw. Schwingungsdämpfung
US7382030B1 (en) * 2006-07-25 2008-06-03 Rf Micro Devices, Inc. Integrated metal shield for a field effect transistor
JP2008085117A (ja) * 2006-09-28 2008-04-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US8829624B2 (en) * 2008-06-30 2014-09-09 Fairchild Semiconductor Corporation Power device with monolithically integrated RC snubber
JP4602465B2 (ja) * 2008-12-04 2010-12-22 株式会社東芝 半導体装置
JP5577607B2 (ja) 2009-03-05 2014-08-27 日産自動車株式会社 半導体装置及び半導体装置の製造方法
JP2011009352A (ja) 2009-06-24 2011-01-13 Renesas Electronics Corp 半導体装置およびその製造方法ならびにそれを用いた電源装置

Also Published As

Publication number Publication date
WO2013006699A2 (en) 2013-01-10
WO2013006699A3 (en) 2013-03-21
JP2014523649A (ja) 2014-09-11
JP6101688B2 (ja) 2017-03-22
CN103782387A (zh) 2014-05-07
US20130009225A1 (en) 2013-01-10
US9385216B2 (en) 2016-07-05
US8796745B2 (en) 2014-08-05
US20140308787A1 (en) 2014-10-16

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