JP2014212305A5 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
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- JP2014212305A5 JP2014212305A5 JP2014054599A JP2014054599A JP2014212305A5 JP 2014212305 A5 JP2014212305 A5 JP 2014212305A5 JP 2014054599 A JP2014054599 A JP 2014054599A JP 2014054599 A JP2014054599 A JP 2014054599A JP 2014212305 A5 JP2014212305 A5 JP 2014212305A5
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- insulating film
- opening
- forming
- film
- mask
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- 239000004065 semiconductor Substances 0.000 title claims 8
- 238000004519 manufacturing process Methods 0.000 title claims 4
- 239000000758 substrate Substances 0.000 claims 1
Claims (3)
前記第１の導電膜の上方に第１の絶縁膜を形成する工程と、Forming a first insulating film above the first conductive film;
前記第１の絶縁膜の上方に半導体膜を形成する工程と、Forming a semiconductor film over the first insulating film;
前記半導体膜の上方に第２の絶縁膜を形成する工程と、Forming a second insulating film above the semiconductor film;
前記第２の絶縁膜の上方に、第１の領域と、前記第１の領域における厚さよりも小さな厚さを有する第２の領域と、を有する第１のマスクを形成する工程と、Forming a first mask having a first region and a second region having a thickness smaller than the thickness of the first region above the second insulating film;
前記第１のマスクを用いて、前記第１の絶縁膜及び前記第２の絶縁膜のうち前記第１のマスクと重ならない部分を除去することにより、前記第１の絶縁膜及び前記第２の絶縁膜に第１の開口を形成する工程と、By using the first mask, a portion of the first insulating film and the second insulating film that does not overlap with the first mask is removed, whereby the first insulating film and the second insulating film are removed. Forming a first opening in the insulating film;
前記第２の領域における前記第１のマスクを後退させることにより、第２のマスクを形成する工程と、Forming a second mask by retracting the first mask in the second region;
前記第２のマスクを用いて、前記第２の絶縁膜のうち前記第２の領域と重なる部分を除去することにより、前記第２の絶縁膜における前記第１の開口よりも開口が広い第２の開口を形成すると共に、前記半導体膜と重なる領域に第３の開口を形成する工程と、By using the second mask to remove a portion of the second insulating film that overlaps the second region, a second opening having a larger opening than the first opening in the second insulating film is obtained. Forming a third opening in a region overlapping with the semiconductor film, and
前記第２のマスクを除去する工程と、Removing the second mask;
前記第２の絶縁膜の少なくとも一部の上方に、前記第１の絶縁膜における前記第１の開口、前記第２の開口、及び前記第３の開口を介して前記第１の導電膜と前記半導体膜とを電気的に接続する第２の導電膜を形成する工程と、Above the at least part of the second insulating film, the first conductive film and the first opening in the first insulating film via the first opening, the second opening, and the third opening Forming a second conductive film that electrically connects the semiconductor film;
を有することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising:
前記第１の絶縁膜における前記第１の開口は、テーパー形状を有することを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the first opening in the first insulating film has a tapered shape.
前記第２の開口及び前記第３の開口は、テーパー形状を有することを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the second opening and the third opening have a tapered shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014054599A JP6300589B2 (en) | 2013-04-04 | 2014-03-18 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013078908 | 2013-04-04 | ||
| JP2013078908 | 2013-04-04 | ||
| JP2014054599A JP6300589B2 (en) | 2013-04-04 | 2014-03-18 | Method for manufacturing semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018032936A Division JP6821617B2 (en) | 2013-04-04 | 2018-02-27 | Manufacturing method of semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014212305A JP2014212305A (en) | 2014-11-13 |
| JP2014212305A5 true JP2014212305A5 (en) | 2017-04-06 |
| JP6300589B2 JP6300589B2 (en) | 2018-03-28 |
Family
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Family Applications (9)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014054599A Active JP6300589B2 (en) | 2013-04-04 | 2014-03-18 | Method for manufacturing semiconductor device |
| JP2018032936A Active JP6821617B2 (en) | 2013-04-04 | 2018-02-27 | Manufacturing method of semiconductor device |
| JP2018150989A Active JP6446591B1 (en) | 2013-04-04 | 2018-08-10 | Semiconductor device |
| JP2019095684A Active JP6821741B2 (en) | 2013-04-04 | 2019-05-22 | Manufacturing method of semiconductor device |
| JP2019131552A Withdrawn JP2019204960A (en) | 2013-04-04 | 2019-07-17 | Semiconductor device |
| JP2019131555A Withdrawn JP2019204961A (en) | 2013-04-04 | 2019-07-17 | Method for manufacturing semiconductor device |
| JP2020090427A Active JP6936897B2 (en) | 2013-04-04 | 2020-05-25 | Semiconductor device |
| JP2021138539A Withdrawn JP2021192443A (en) | 2013-04-04 | 2021-08-27 | Semiconductor device |
| JP2023068981A Pending JP2023109752A (en) | 2013-04-04 | 2023-04-20 | Semiconductor device |
Family Applications After (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018032936A Active JP6821617B2 (en) | 2013-04-04 | 2018-02-27 | Manufacturing method of semiconductor device |
| JP2018150989A Active JP6446591B1 (en) | 2013-04-04 | 2018-08-10 | Semiconductor device |
| JP2019095684A Active JP6821741B2 (en) | 2013-04-04 | 2019-05-22 | Manufacturing method of semiconductor device |
| JP2019131552A Withdrawn JP2019204960A (en) | 2013-04-04 | 2019-07-17 | Semiconductor device |
| JP2019131555A Withdrawn JP2019204961A (en) | 2013-04-04 | 2019-07-17 | Method for manufacturing semiconductor device |
| JP2020090427A Active JP6936897B2 (en) | 2013-04-04 | 2020-05-25 | Semiconductor device |
| JP2021138539A Withdrawn JP2021192443A (en) | 2013-04-04 | 2021-08-27 | Semiconductor device |
| JP2023068981A Pending JP2023109752A (en) | 2013-04-04 | 2023-04-20 | Semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (7) | US9570310B2 (en) |
| JP (9) | JP6300589B2 (en) |
| KR (6) | KR102241241B1 (en) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6300589B2 (en) | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP6464368B2 (en) * | 2014-11-28 | 2019-02-06 | 株式会社Ｊｏｌｅｄ | Thin film transistor substrate |
| CN104576657B (en) * | 2014-12-23 | 2019-02-01 | 天马微电子股份有限公司 | A kind of array substrate and its manufacturing method |
| KR102231044B1 (en) * | 2014-12-29 | 2021-03-23 | 엘지디스플레이 주식회사 | Contact sutructure for display device and method for fabricating the same |
| CN104538357B (en) * | 2015-01-13 | 2018-05-01 | 合肥京东方光电科技有限公司 | Make the method and array base palte of array base palte |
| TW202316486A (en) | 2015-03-30 | 2023-04-16 | 日商半導體能源研究所股份有限公司 | Method for manufacturing semiconductor device |
| US9811314B2 (en) | 2016-02-22 | 2017-11-07 | Sonos, Inc. | Metadata exchange involving a networked playback system and a networked microphone system |
| US9965247B2 (en) | 2016-02-22 | 2018-05-08 | Sonos, Inc. | Voice controlled media playback system based on user profile |
| US10264030B2 (en) | 2016-02-22 | 2019-04-16 | Sonos, Inc. | Networked microphone device control |
| US9820039B2 (en) | 2016-02-22 | 2017-11-14 | Sonos, Inc. | Default playback devices |
| US10095470B2 (en) | 2016-02-22 | 2018-10-09 | Sonos, Inc. | Audio response playback |
| US10142754B2 (en) * | 2016-02-22 | 2018-11-27 | Sonos, Inc. | Sensor on moving component of transducer |
| US9947316B2 (en) | 2016-02-22 | 2018-04-17 | Sonos, Inc. | Voice control of a media playback system |
| US9978390B2 (en) | 2016-06-09 | 2018-05-22 | Sonos, Inc. | Dynamic player selection for audio signal processing |
| US10152969B2 (en) | 2016-07-15 | 2018-12-11 | Sonos, Inc. | Voice detection by multiple devices |
| US10134399B2 (en) | 2016-07-15 | 2018-11-20 | Sonos, Inc. | Contextualization of voice inputs |
| KR20180107167A (en) * | 2016-07-25 | 2018-10-01 | 선전 로욜 테크놀로지스 컴퍼니 리미티드 | Method for manufacturing array substrate |
| US10115400B2 (en) | 2016-08-05 | 2018-10-30 | Sonos, Inc. | Multiple voice services |
| US9942678B1 (en) | 2016-09-27 | 2018-04-10 | Sonos, Inc. | Audio playback settings for voice interaction |
| US9743204B1 (en) | 2016-09-30 | 2017-08-22 | Sonos, Inc. | Multi-orientation playback device microphones |
| US10181323B2 (en) | 2016-10-19 | 2019-01-15 | Sonos, Inc. | Arbitration-based voice recognition |
| US11183181B2 (en) | 2017-03-27 | 2021-11-23 | Sonos, Inc. | Systems and methods of multiple voice services |
| US10475449B2 (en) | 2017-08-07 | 2019-11-12 | Sonos, Inc. | Wake-word detection suppression |
| US10048930B1 (en) | 2017-09-08 | 2018-08-14 | Sonos, Inc. | Dynamic computation of system response volume |
| US10446165B2 (en) | 2017-09-27 | 2019-10-15 | Sonos, Inc. | Robust short-time fourier transform acoustic echo cancellation during audio playback |
| US10482868B2 (en) | 2017-09-28 | 2019-11-19 | Sonos, Inc. | Multi-channel acoustic echo cancellation |
| US10051366B1 (en) | 2017-09-28 | 2018-08-14 | Sonos, Inc. | Three-dimensional beam forming with a microphone array |
| US10621981B2 (en) | 2017-09-28 | 2020-04-14 | Sonos, Inc. | Tone interference cancellation |
| US10466962B2 (en) | 2017-09-29 | 2019-11-05 | Sonos, Inc. | Media playback system with voice assistance |
| US10880650B2 (en) | 2017-12-10 | 2020-12-29 | Sonos, Inc. | Network microphone devices with automatic do not disturb actuation capabilities |
| US10818290B2 (en) | 2017-12-11 | 2020-10-27 | Sonos, Inc. | Home graph |
| WO2019152722A1 (en) | 2018-01-31 | 2019-08-08 | Sonos, Inc. | Device designation of playback and network microphone device arrangements |
| US11175880B2 (en) | 2018-05-10 | 2021-11-16 | Sonos, Inc. | Systems and methods for voice-assisted media content selection |
| US10847178B2 (en) | 2018-05-18 | 2020-11-24 | Sonos, Inc. | Linear filtering for noise-suppressed speech detection |
| US10959029B2 (en) | 2018-05-25 | 2021-03-23 | Sonos, Inc. | Determining and adapting to changes in microphone performance of playback devices |
| US10681460B2 (en) | 2018-06-28 | 2020-06-09 | Sonos, Inc. | Systems and methods for associating playback devices with voice assistant services |
| US10461710B1 (en) | 2018-08-28 | 2019-10-29 | Sonos, Inc. | Media playback system with maximum volume setting |
| US11076035B2 (en) | 2018-08-28 | 2021-07-27 | Sonos, Inc. | Do not disturb feature for audio notifications |
| US10878811B2 (en) | 2018-09-14 | 2020-12-29 | Sonos, Inc. | Networked devices, systems, and methods for intelligently deactivating wake-word engines |
| US10587430B1 (en) | 2018-09-14 | 2020-03-10 | Sonos, Inc. | Networked devices, systems, and methods for associating playback devices based on sound codes |
| US11024331B2 (en) | 2018-09-21 | 2021-06-01 | Sonos, Inc. | Voice detection optimization using sound metadata |
| US10811015B2 (en) | 2018-09-25 | 2020-10-20 | Sonos, Inc. | Voice detection optimization based on selected voice assistant service |
| US11100923B2 (en) | 2018-09-28 | 2021-08-24 | Sonos, Inc. | Systems and methods for selective wake word detection using neural network models |
| US10692518B2 (en) | 2018-09-29 | 2020-06-23 | Sonos, Inc. | Linear filtering for noise-suppressed speech detection via multiple network microphone devices |
| US11899519B2 (en) | 2018-10-23 | 2024-02-13 | Sonos, Inc. | Multiple stage network microphone device with reduced power consumption and processing load |
| EP3654249A1 (en) | 2018-11-15 | 2020-05-20 | Snips | Dilated convolutions and gating for efficient keyword spotting |
| US11183183B2 (en) | 2018-12-07 | 2021-11-23 | Sonos, Inc. | Systems and methods of operating media playback systems having multiple voice assistant services |
| US11132989B2 (en) | 2018-12-13 | 2021-09-28 | Sonos, Inc. | Networked microphone devices, systems, and methods of localized arbitration |
| US10602268B1 (en) | 2018-12-20 | 2020-03-24 | Sonos, Inc. | Optimization of network microphone devices using noise classification |
| US10867604B2 (en) | 2019-02-08 | 2020-12-15 | Sonos, Inc. | Devices, systems, and methods for distributed voice processing |
| US11315556B2 (en) | 2019-02-08 | 2022-04-26 | Sonos, Inc. | Devices, systems, and methods for distributed voice processing by transmitting sound data associated with a wake word to an appropriate device for identification |
| US11120794B2 (en) | 2019-05-03 | 2021-09-14 | Sonos, Inc. | Voice assistant persistence across multiple network microphone devices |
| US10586540B1 (en) | 2019-06-12 | 2020-03-10 | Sonos, Inc. | Network microphone device with command keyword conditioning |
| US11200894B2 (en) | 2019-06-12 | 2021-12-14 | Sonos, Inc. | Network microphone device with command keyword eventing |
| US11361756B2 (en) | 2019-06-12 | 2022-06-14 | Sonos, Inc. | Conditional wake word eventing based on environment |
| US11138969B2 (en) | 2019-07-31 | 2021-10-05 | Sonos, Inc. | Locally distributed keyword detection |
| US10871943B1 (en) | 2019-07-31 | 2020-12-22 | Sonos, Inc. | Noise classification for event detection |
| US11138975B2 (en) | 2019-07-31 | 2021-10-05 | Sonos, Inc. | Locally distributed keyword detection |
| US11189286B2 (en) | 2019-10-22 | 2021-11-30 | Sonos, Inc. | VAS toggle based on device orientation |
| US11200900B2 (en) | 2019-12-20 | 2021-12-14 | Sonos, Inc. | Offline voice control |
| US11562740B2 (en) | 2020-01-07 | 2023-01-24 | Sonos, Inc. | Voice verification for media playback |
| US11556307B2 (en) | 2020-01-31 | 2023-01-17 | Sonos, Inc. | Local voice data processing |
| US11308958B2 (en) | 2020-02-07 | 2022-04-19 | Sonos, Inc. | Localized wakeword verification |
| CN111090190B (en) * | 2020-03-22 | 2020-06-23 | 深圳市华星光电半导体显示技术有限公司 | Mask plate, display panel and electronic equipment |
| US11727919B2 (en) | 2020-05-20 | 2023-08-15 | Sonos, Inc. | Memory allocation for keyword spotting engines |
| US11482224B2 (en) | 2020-05-20 | 2022-10-25 | Sonos, Inc. | Command keywords with input detection windowing |
| US11308962B2 (en) | 2020-05-20 | 2022-04-19 | Sonos, Inc. | Input detection windowing |
| US11698771B2 (en) | 2020-08-25 | 2023-07-11 | Sonos, Inc. | Vocal guidance engines for playback devices |
| US11984123B2 (en) | 2020-11-12 | 2024-05-14 | Sonos, Inc. | Network device interaction by range |
| US11551700B2 (en) | 2021-01-25 | 2023-01-10 | Sonos, Inc. | Systems and methods for power-efficient keyword detection |
Family Cites Families (166)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198861A (en) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | Thin film transistor |
| JPH0244256B2 (en) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN2O5DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
| JPS63210023A (en) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | Compound having laminar structure of hexagonal crystal system expressed by ingazn4o7 and its production |
| JPH0244260B2 (en) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN5O8DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
| JPH0244258B2 (en) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN3O6DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
| JPH0244262B2 (en) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN6O9DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
| JPH0244263B2 (en) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | INGAZN7O10DESHIMESARERUROTSUHOSHOKEINOSOJOKOZOOJUSURUKAGOBUTSUOYOBISONOSEIZOHO |
| JPH05251705A (en) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | Thin-film transistor |
| JPH0843860A (en) | 1994-04-28 | 1996-02-16 | Xerox Corp | Electrically separated pixel element in low-voltage driven active matrix liquid crystal display |
| US5682211A (en) | 1994-04-28 | 1997-10-28 | Xerox Corporation | Integrated dark matrix for an active matrix liquid crystal display with pixel electrodes overlapping gate data lines |
| US5621556A (en) * | 1994-04-28 | 1997-04-15 | Xerox Corporation | Method of manufacturing active matrix LCD using five masks |
| JP3260975B2 (en) * | 1994-06-02 | 2002-02-25 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP3479375B2 (en) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same |
| EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (en) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | Manufacturing method of liquid crystal display device |
| KR100289510B1 (en) | 1997-05-26 | 2001-05-02 | 다니구찌 이찌로오, 기타오카 다카시 | TFT array board and liquid crystal display device using it |
| JPH11242241A (en) * | 1997-05-26 | 1999-09-07 | Mitsubishi Electric Corp | Liquid crystal display device, manufacture therefor, tft array substrate used for liquid crystal display device and manufacture therefor |
| JP4170454B2 (en) | 1998-07-24 | 2008-10-22 | Ｈｏｙａ株式会社 | Article having transparent conductive oxide thin film and method for producing the same |
| JP2000150861A (en) | 1998-11-16 | 2000-05-30 | Tdk Corp | Oxide thin film |
| JP3276930B2 (en) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | Transistor and semiconductor device |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4089858B2 (en) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | Semiconductor device |
| KR20020038482A (en) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | Thin film transistor array, method for producing the same, and display panel using the same |
| JP3997731B2 (en) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | Method for forming a crystalline semiconductor thin film on a substrate |
| JP2002289859A (en) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | Thin-film transistor |
| TW490858B (en) * | 2001-04-26 | 2002-06-11 | Samsung Electronics Co Ltd | Polycrystalline thin film transistor for liquid crystal device(LCD) and method of manufacturing the same |
| JP3925839B2 (en) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | Semiconductor memory device and test method thereof |
| JP4090716B2 (en) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | Thin film transistor and matrix display device |
| JP4164562B2 (en) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | Transparent thin film field effect transistor using homologous thin film as active layer |
| EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| JP4083486B2 (en) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | Method for producing LnCuO (S, Se, Te) single crystal thin film |
| US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
| ATE396500T1 (en) | 2002-03-20 | 2008-06-15 | Koninkl Philips Electronics Nv | ACTIVE MATRIX ELECTROLUMINescent DISPLAY DEVICES AND PROCESS FOR THEIR PRODUCTION |
| EP1490909B1 (en) | 2002-03-20 | 2007-08-22 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display devices and their manufacture |
| GB0216053D0 (en) * | 2002-03-20 | 2002-08-21 | Koninkl Philips Electronics Nv | Active matrix electroluminescent display devices and their manufacture |
| WO2003079442A1 (en) | 2002-03-20 | 2003-09-25 | Koninklijke Philips Electronics N.V. | Active matrix electroluminescent display devices, and their manufacture |
| EP1488456B1 (en) | 2002-03-20 | 2013-01-16 | TPO Hong Kong Holding Limited | Active matrix display devices, and their manufacture |
| JP3933591B2 (en) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | Organic electroluminescent device |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (en) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | Manufacturing method of semiconductor device and its manufacturing method |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP2004151546A (en) * | 2002-10-31 | 2004-05-27 | Sharp Corp | Active matrix substrate and display apparatus |
| JP4166105B2 (en) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
| JP2004273732A (en) | 2003-03-07 | 2004-09-30 | Sharp Corp | Active matrix substrate and its producing process |
| JP2005011920A (en) | 2003-06-18 | 2005-01-13 | Hitachi Displays Ltd | Display and its manufacturing method |
| JP4108633B2 (en) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| KR101031674B1 (en) * | 2003-12-29 | 2011-04-29 | 엘지디스플레이 주식회사 | Method for fabricating liquid crystal display device and diffraction mask for thereof |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| CN102856390B (en) | 2004-03-12 | 2015-11-25 | 独立行政法人科学技术振兴机构 | Comprise the LCD of thin-film transistor or the transition components of OLED display |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (en) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | Thin-film transistor and its manufacturing method |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| EP2453480A2 (en) | 2004-11-10 | 2012-05-16 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (en) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | Thin film transistor |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (en) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | Organic Light Emitting Display and Fabrication Method for the same |
| JP2007059128A (en) | 2005-08-23 | 2007-03-08 | Canon Inc | Organic electroluminescent display device and manufacturing method thereof |
| JP5116225B2 (en) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | Manufacturing method of oxide semiconductor device |
| JP4280736B2 (en) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | Semiconductor element |
| JP2007073705A (en) | 2005-09-06 | 2007-03-22 | Canon Inc | Oxide-semiconductor channel film transistor and its method of manufacturing same |
| JP4850457B2 (en) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | Thin film transistor and thin film diode |
| EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
| JP5037808B2 (en) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | Field effect transistor using amorphous oxide, and display device using the transistor |
| CN101667544B (en) | 2005-11-15 | 2012-09-05 | 株式会社半导体能源研究所 | Semiconductor device and method of manufacturing a semiconductor device |
| US7821613B2 (en) * | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7487465B2 (en) | 2006-01-06 | 2009-02-03 | International Business Machines Corporation | Application clippings |
| JP2007188936A (en) * | 2006-01-11 | 2007-07-26 | Epson Imaging Devices Corp | Display device |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (en) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnO film and method of manufacturing TFT using the same |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR20070101595A (en) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | Zno thin film transistor |
| US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
| KR101261608B1 (en) | 2006-04-26 | 2013-05-06 | 삼성디스플레이 주식회사 | Thin film transistor array panel and method for manufacturing the same |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP5028033B2 (en) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | Oxide semiconductor film dry etching method |
| KR101255616B1 (en) | 2006-07-28 | 2013-04-16 | 삼성디스플레이 주식회사 | Multi-tone optical mask, method of manufacturing the same and method of manufacturing thin film transistor substrate using the same |
| JP4609797B2 (en) | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | Thin film device and manufacturing method thereof |
| JP4999400B2 (en) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | Oxide semiconductor film dry etching method |
| JP4332545B2 (en) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | Field effect transistor and manufacturing method thereof |
| JP5164357B2 (en) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| JP4274219B2 (en) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | Electronic devices, organic electroluminescence devices, organic thin film semiconductor devices |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| JP2008129314A (en) | 2006-11-21 | 2008-06-05 | Hitachi Displays Ltd | Image display device and manufacturing method thereof |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (en) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | Color el display, and its manufacturing method |
| KR20080060087A (en) * | 2006-12-26 | 2008-07-01 | 삼성전자주식회사 | Display device and manufacturing method of the same |
| KR101303578B1 (en) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | Etching method of thin film |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| KR100851215B1 (en) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | Thin film transistor and organic light-emitting dislplay device having the thin film transistor |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (en) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | Thin film transistor substrate and manufacturing method thereof |
| KR20080094300A (en) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | Thin film transistor and method of manufacturing the same and flat panel display comprising the same |
| KR101334181B1 (en) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | Thin Film Transistor having selectively crystallized channel layer and method of manufacturing the same |
| CN101663762B (en) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | Oxynitride semiconductor |
| KR101345376B1 (en) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | Fabrication method of ZnO family Thin film transistor |
| US7824939B2 (en) | 2007-10-23 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device comprising separated and electrically connected source wiring layers |
| JP5377940B2 (en) | 2007-12-03 | 2013-12-25 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
| EP2073255B1 (en) * | 2007-12-21 | 2016-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Diode and display device comprising the diode |
| JP5627071B2 (en) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP4623179B2 (en) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | Thin film transistor and manufacturing method thereof |
| JP5525224B2 (en) * | 2008-09-30 | 2014-06-18 | 株式会社半導体エネルギー研究所 | Display device |
| KR101803720B1 (en) | 2008-10-03 | 2017-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device |
| JP5451280B2 (en) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device |
| JP2010097077A (en) | 2008-10-17 | 2010-04-30 | Hitachi Displays Ltd | Display device and manufacturing method thereof |
| KR101785887B1 (en) | 2008-11-21 | 2017-10-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device, and display device |
| JP5384088B2 (en) | 2008-11-28 | 2014-01-08 | 株式会社ジャパンディスプレイ | Display device |
| JP5491833B2 (en) * | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP5590868B2 (en) * | 2008-12-11 | 2014-09-17 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| KR101569766B1 (en) | 2009-01-29 | 2015-11-17 | 삼성디스플레이 주식회사 | Thin film transistor array panel and method for manufacturing the same |
| US8927981B2 (en) * | 2009-03-30 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2010263182A (en) | 2009-04-10 | 2010-11-18 | Toppan Printing Co Ltd | Thin film transistor, and image display unit |
| KR101050461B1 (en) * | 2009-04-23 | 2011-07-19 | 삼성모바일디스플레이주식회사 | Organic light emitting display device and manufacturing method of organic light emitting display device |
| JP5313028B2 (en) * | 2009-04-23 | 2013-10-09 | 株式会社ジャパンディスプレイ | Image display device and manufacturing method thereof |
| JP2010272691A (en) * | 2009-05-21 | 2010-12-02 | Sharp Corp | Method of manufacturing thin film transistor substrate, thin film transistor substrate, and display |
| JP5564331B2 (en) | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| TWI386745B (en) | 2009-06-17 | 2013-02-21 | Au Optronics Corp | Thin film transistor array substrate and manufacturing method thereof |
| US8344378B2 (en) * | 2009-06-26 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method for manufacturing the same |
| KR101904811B1 (en) * | 2009-07-24 | 2018-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| JP5304517B2 (en) * | 2009-07-28 | 2013-10-02 | セイコーエプソン株式会社 | Fluid ejecting apparatus and fluid ejecting method |
| KR101291434B1 (en) | 2009-07-31 | 2013-08-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| KR101746198B1 (en) | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and electronic device |
| KR102145488B1 (en) * | 2009-10-09 | 2020-08-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device |
| US20120242624A1 (en) | 2009-11-27 | 2012-09-27 | Sharp Kabushiki Kaisha | Thin film transistor and method for fabricating the same, semiconductor device and method for fabricating the same, as well as display |
| US8685803B2 (en) | 2009-12-09 | 2014-04-01 | Sharp Kabushiki Kaisha | Semiconductor device and method for producing same |
| WO2011074506A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| EP2518772A4 (en) | 2009-12-21 | 2016-09-07 | Sharp Kk | Active matrix substrate, display panel provided with same, and method for manufacturing active matrix substrate |
| KR101921619B1 (en) | 2009-12-28 | 2018-11-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| CN102656698B (en) * | 2009-12-29 | 2015-06-17 | 夏普株式会社 | Active matrix substrate and method for manufacturing same |
| US20130214279A1 (en) | 2010-04-30 | 2013-08-22 | Jun Nishimura | Circuit board and display device |
| JP2012078545A (en) | 2010-10-01 | 2012-04-19 | Fuji Xerox Co Ltd | Image forming device and program |
| US8461630B2 (en) * | 2010-12-01 | 2013-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2012086513A1 (en) * | 2010-12-20 | 2012-06-28 | シャープ株式会社 | Semiconductor device and display device |
| TWI544525B (en) | 2011-01-21 | 2016-08-01 | 半導體能源研究所股份有限公司 | Semiconductor device and method for manufacturing the same |
| JP2011118422A (en) * | 2011-03-01 | 2011-06-16 | Nec Lcd Technologies Ltd | Liquid crystal display device, thin film transistor array substrate for liquid crystal display device, and method for manufacturing the substrate |
| KR20120129593A (en) | 2011-05-20 | 2012-11-28 | 삼성디스플레이 주식회사 | An organic luminescence emitting display and the manufacturing method thereof |
| KR101842538B1 (en) | 2011-05-26 | 2018-03-28 | 삼성디스플레이 주식회사 | Backplane for flat panel display apparatus, flat panel display apparatus comprising the same, and manufacturing method of the backplane for flat panel display apparatus |
| JP6033071B2 (en) | 2011-12-23 | 2016-11-30 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US8801948B2 (en) | 2012-07-02 | 2014-08-12 | Apple Inc. | TFT mask reduction |
| CN103022080B (en) | 2012-12-12 | 2015-09-16 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, organic LED display device |
| JP6300589B2 (en) * | 2013-04-04 | 2018-03-28 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
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