JP2014210690A - 炭化珪素基板の製造方法 - Google Patents

炭化珪素基板の製造方法 Download PDF

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Publication number
JP2014210690A
JP2014210690A JP2013089233A JP2013089233A JP2014210690A JP 2014210690 A JP2014210690 A JP 2014210690A JP 2013089233 A JP2013089233 A JP 2013089233A JP 2013089233 A JP2013089233 A JP 2013089233A JP 2014210690 A JP2014210690 A JP 2014210690A
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JP
Japan
Prior art keywords
silicon carbide
main surface
carbide substrate
sulfuric acid
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013089233A
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English (en)
Japanese (ja)
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JP2014210690A5 (https=
Inventor
恭子 沖田
Kyoko Okita
恭子 沖田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2013089233A priority Critical patent/JP2014210690A/ja
Priority to US14/219,061 priority patent/US20140315373A1/en
Priority to CN201410162822.XA priority patent/CN104112652A/zh
Publication of JP2014210690A publication Critical patent/JP2014210690A/ja
Publication of JP2014210690A5 publication Critical patent/JP2014210690A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2013089233A 2013-04-22 2013-04-22 炭化珪素基板の製造方法 Pending JP2014210690A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013089233A JP2014210690A (ja) 2013-04-22 2013-04-22 炭化珪素基板の製造方法
US14/219,061 US20140315373A1 (en) 2013-04-22 2014-03-19 Method for manufacturing silicon carbide substrate
CN201410162822.XA CN104112652A (zh) 2013-04-22 2014-04-22 制造碳化硅衬底的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013089233A JP2014210690A (ja) 2013-04-22 2013-04-22 炭化珪素基板の製造方法

Publications (2)

Publication Number Publication Date
JP2014210690A true JP2014210690A (ja) 2014-11-13
JP2014210690A5 JP2014210690A5 (https=) 2016-03-17

Family

ID=51709396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013089233A Pending JP2014210690A (ja) 2013-04-22 2013-04-22 炭化珪素基板の製造方法

Country Status (3)

Country Link
US (1) US20140315373A1 (https=)
JP (1) JP2014210690A (https=)
CN (1) CN104112652A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020172434A (ja) * 2015-10-15 2020-10-22 住友電気工業株式会社 炭化珪素単結晶基板および炭化珪素エピタキシャル基板の製造方法
US11342418B2 (en) 2017-12-08 2022-05-24 Sumitomo Electric Industries, Ltd. Silicon carbide substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10113249B2 (en) * 2014-10-23 2018-10-30 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method for manufacturing the same
CN110299403B (zh) * 2014-11-27 2022-03-25 住友电气工业株式会社 碳化硅基板
CN104505338B (zh) * 2014-12-24 2017-11-07 国家电网公司 一种碳化硅晶片外延前预清洗方法
WO2016113924A1 (ja) * 2015-01-13 2016-07-21 住友電気工業株式会社 半導体積層体
JPWO2020235225A1 (https=) * 2019-05-17 2020-11-26
JP7653807B2 (ja) * 2021-03-11 2025-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
CN115954417B (zh) * 2022-12-09 2026-02-27 福建兆元光电有限公司 一种提高外延结晶质量的外延方法
CN118663631A (zh) * 2023-03-20 2024-09-20 横店集团东磁股份有限公司 一种清洗ald铝舟的方法
CN116013777B (zh) * 2023-03-27 2023-06-06 成都功成半导体有限公司 一种SiC晶圆自动键合热氧生长方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194216A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4375991B2 (ja) * 2003-04-09 2009-12-02 関東化学株式会社 半導体基板洗浄液組成物
JP2006352075A (ja) * 2005-05-17 2006-12-28 Sumitomo Electric Ind Ltd 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板
JP2007234952A (ja) * 2006-03-02 2007-09-13 Sumitomo Electric Ind Ltd 化合物半導体基板の表面処理方法、化合物半導体の製造方法、化合物半導体基板、および半導体ウエハ
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
CN102842595B (zh) * 2011-06-20 2015-12-02 中国科学院微电子研究所 半导体器件及其制造方法
JPWO2013088928A1 (ja) * 2011-12-14 2015-04-27 旭硝子株式会社 洗浄剤、および炭化ケイ素単結晶基板の製造方法
US8647445B1 (en) * 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194216A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020172434A (ja) * 2015-10-15 2020-10-22 住友電気工業株式会社 炭化珪素単結晶基板および炭化珪素エピタキシャル基板の製造方法
US11342418B2 (en) 2017-12-08 2022-05-24 Sumitomo Electric Industries, Ltd. Silicon carbide substrate

Also Published As

Publication number Publication date
US20140315373A1 (en) 2014-10-23
CN104112652A (zh) 2014-10-22

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