CN104112652A - 制造碳化硅衬底的方法 - Google Patents

制造碳化硅衬底的方法 Download PDF

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Publication number
CN104112652A
CN104112652A CN201410162822.XA CN201410162822A CN104112652A CN 104112652 A CN104112652 A CN 104112652A CN 201410162822 A CN201410162822 A CN 201410162822A CN 104112652 A CN104112652 A CN 104112652A
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CN
China
Prior art keywords
silicon carbide
main surface
carbide substrate
manufacturing
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410162822.XA
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English (en)
Chinese (zh)
Inventor
冲田恭子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN104112652A publication Critical patent/CN104112652A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H10P70/125—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201410162822.XA 2013-04-22 2014-04-22 制造碳化硅衬底的方法 Pending CN104112652A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-089233 2013-04-22
JP2013089233A JP2014210690A (ja) 2013-04-22 2013-04-22 炭化珪素基板の製造方法

Publications (1)

Publication Number Publication Date
CN104112652A true CN104112652A (zh) 2014-10-22

Family

ID=51709396

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410162822.XA Pending CN104112652A (zh) 2013-04-22 2014-04-22 制造碳化硅衬底的方法

Country Status (3)

Country Link
US (1) US20140315373A1 (https=)
JP (1) JP2014210690A (https=)
CN (1) CN104112652A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104505338A (zh) * 2014-12-24 2015-04-08 国家电网公司 一种碳化硅晶片外延前预清洗方法
CN106796877A (zh) * 2014-10-23 2017-05-31 住友电气工业株式会社 碳化硅衬底和用于制造所述碳化硅衬底的方法
CN107002280A (zh) * 2014-11-27 2017-08-01 住友电气工业株式会社 碳化硅基板、其制造方法和制造碳化硅半导体装置的方法
CN113811643A (zh) * 2019-05-17 2021-12-17 住友电气工业株式会社 碳化硅衬底
CN115954417A (zh) * 2022-12-09 2023-04-11 福建兆元光电有限公司 一种提高外延结晶质量的外延方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016113924A1 (ja) * 2015-01-13 2016-07-21 住友電気工業株式会社 半導体積層体
JP6981505B2 (ja) * 2015-10-15 2021-12-15 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法
JP7088210B2 (ja) 2017-12-08 2022-06-21 住友電気工業株式会社 炭化珪素基板
JP7653807B2 (ja) * 2021-03-11 2025-03-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
CN118663631A (zh) * 2023-03-20 2024-09-20 横店集团东磁股份有限公司 一种清洗ald铝舟的方法
CN116013777B (zh) * 2023-03-27 2023-06-06 成都功成半导体有限公司 一种SiC晶圆自动键合热氧生长方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4375991B2 (ja) * 2003-04-09 2009-12-02 関東化学株式会社 半導体基板洗浄液組成物
JP2006352075A (ja) * 2005-05-17 2006-12-28 Sumitomo Electric Ind Ltd 窒化物系化合物半導体および化合物半導体の洗浄方法、これらの製造方法および基板
JP2007234952A (ja) * 2006-03-02 2007-09-13 Sumitomo Electric Ind Ltd 化合物半導体基板の表面処理方法、化合物半導体の製造方法、化合物半導体基板、および半導体ウエハ
JP2009194216A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 半導体装置の製造方法
JP4887418B2 (ja) * 2009-12-14 2012-02-29 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法
CN102842595B (zh) * 2011-06-20 2015-12-02 中国科学院微电子研究所 半导体器件及其制造方法
JPWO2013088928A1 (ja) * 2011-12-14 2015-04-27 旭硝子株式会社 洗浄剤、および炭化ケイ素単結晶基板の製造方法
US8647445B1 (en) * 2012-11-06 2014-02-11 International Business Machines Corporation Process for cleaning semiconductor devices and/or tooling during manufacturing thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106796877A (zh) * 2014-10-23 2017-05-31 住友电气工业株式会社 碳化硅衬底和用于制造所述碳化硅衬底的方法
US10704163B2 (en) 2014-10-23 2020-07-07 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and method for manufacturing the same
CN106796877B (zh) * 2014-10-23 2021-03-09 住友电气工业株式会社 碳化硅衬底和用于制造所述碳化硅衬底的方法
CN107002280A (zh) * 2014-11-27 2017-08-01 住友电气工业株式会社 碳化硅基板、其制造方法和制造碳化硅半导体装置的方法
CN107002280B (zh) * 2014-11-27 2019-06-18 住友电气工业株式会社 碳化硅基板、其制造方法和制造碳化硅半导体装置的方法
CN104505338A (zh) * 2014-12-24 2015-04-08 国家电网公司 一种碳化硅晶片外延前预清洗方法
CN104505338B (zh) * 2014-12-24 2017-11-07 国家电网公司 一种碳化硅晶片外延前预清洗方法
CN113811643A (zh) * 2019-05-17 2021-12-17 住友电气工业株式会社 碳化硅衬底
CN113811643B (zh) * 2019-05-17 2024-03-22 住友电气工业株式会社 碳化硅衬底
CN115954417A (zh) * 2022-12-09 2023-04-11 福建兆元光电有限公司 一种提高外延结晶质量的外延方法

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Publication number Publication date
US20140315373A1 (en) 2014-10-23
JP2014210690A (ja) 2014-11-13

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Application publication date: 20141022